FR2892531B1 - Transistor en couches minces, structure de pixel et son procede de reparation - Google Patents

Transistor en couches minces, structure de pixel et son procede de reparation

Info

Publication number
FR2892531B1
FR2892531B1 FR0604715A FR0604715A FR2892531B1 FR 2892531 B1 FR2892531 B1 FR 2892531B1 FR 0604715 A FR0604715 A FR 0604715A FR 0604715 A FR0604715 A FR 0604715A FR 2892531 B1 FR2892531 B1 FR 2892531B1
Authority
FR
France
Prior art keywords
repair
thin film
film transistor
pixel structure
pixel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0604715A
Other languages
English (en)
Other versions
FR2892531A1 (fr
Inventor
Yuan Hsin Tsou
Chien Kuo He
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Chunghwa Picture Tubes Ltd
Original Assignee
Chunghwa Picture Tubes Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chunghwa Picture Tubes Ltd filed Critical Chunghwa Picture Tubes Ltd
Publication of FR2892531A1 publication Critical patent/FR2892531A1/fr
Application granted granted Critical
Publication of FR2892531B1 publication Critical patent/FR2892531B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136259—Repairing; Defects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78663—Amorphous silicon transistors
    • H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Nonlinear Science (AREA)
  • Ceramic Engineering (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
FR0604715A 2005-10-24 2006-05-24 Transistor en couches minces, structure de pixel et son procede de reparation Expired - Fee Related FR2892531B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW094137106A TWI271870B (en) 2005-10-24 2005-10-24 Thin film transistor, pixel structure and repairing method thereof

Publications (2)

Publication Number Publication Date
FR2892531A1 FR2892531A1 (fr) 2007-04-27
FR2892531B1 true FR2892531B1 (fr) 2009-03-20

Family

ID=36603848

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0604715A Expired - Fee Related FR2892531B1 (fr) 2005-10-24 2006-05-24 Transistor en couches minces, structure de pixel et son procede de reparation

Country Status (6)

Country Link
US (1) US7427777B2 (fr)
JP (1) JP2007123794A (fr)
DE (1) DE102006020217A1 (fr)
FR (1) FR2892531B1 (fr)
GB (1) GB2431514B (fr)
TW (1) TWI271870B (fr)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101326560B (zh) * 2005-12-15 2010-09-15 夏普株式会社 有源矩阵基板、显示装置、电视接收机
TWI277216B (en) * 2006-02-16 2007-03-21 Au Optronics Corp Pixel structure and thin film transistor and fabrication methods thereof
US20070194331A1 (en) * 2006-02-17 2007-08-23 Yeh Chang C Liquid crystal display device and defect repairing method for the same
TWI293802B (en) * 2006-03-28 2008-02-21 Au Optronics Corp Liquid crystal display device
US7688392B2 (en) * 2006-04-06 2010-03-30 Chunghwa Picture Tubes, Ltd. Pixel structure including a gate having an opening and an extension line between the data line and the source
TWI333587B (en) * 2006-09-15 2010-11-21 Chunghwa Picture Tubes Ltd Pixel structure and repair method thereof
TWI354172B (en) * 2007-03-21 2011-12-11 Au Optronics Corp Pixel array substrate
JP5157319B2 (ja) * 2007-08-28 2013-03-06 セイコーエプソン株式会社 電気光学装置及び電子機器
TWI463465B (zh) * 2008-04-09 2014-12-01 Chunghwa Picture Tubes Ltd 修補方法
TW201039034A (en) * 2009-04-27 2010-11-01 Chunghwa Picture Tubes Ltd Pixel structure and the method of forming the same
TWI402596B (zh) * 2009-10-01 2013-07-21 Chunghwa Picture Tubes Ltd 具有電容補償的畫素結構
KR101623961B1 (ko) * 2009-12-02 2016-05-26 삼성전자주식회사 트랜지스터와 그 제조방법 및 트랜지스터를 포함하는 전자소자
KR101902922B1 (ko) * 2011-03-03 2018-10-02 삼성전자주식회사 박막 트랜지스터 및 박막 트랜지스터의 제조 방법
US8988624B2 (en) * 2011-06-23 2015-03-24 Apple Inc. Display pixel having oxide thin-film transistor (TFT) with reduced loading
CN110931504A (zh) * 2019-09-17 2020-03-27 深圳市华星光电半导体显示技术有限公司 阵列基板及显示面板

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100214074B1 (ko) 1995-11-03 1999-08-02 김영환 박막트랜지스터 및 그 제조방법
US5808317A (en) 1996-07-24 1998-09-15 International Business Machines Corporation Split-gate, horizontally redundant, and self-aligned thin film transistors
JP3036513B2 (ja) 1998-06-10 2000-04-24 日本電気株式会社 液晶表示装置
KR100542310B1 (ko) 1998-12-30 2006-05-09 비오이 하이디스 테크놀로지 주식회사 박막 트랜지스터 액정표시소자_
KR100370800B1 (ko) 2000-06-09 2003-02-05 엘지.필립스 엘시디 주식회사 액정표시장치용 어레이기판 제작방법
KR100450701B1 (ko) * 2001-12-28 2004-10-01 엘지.필립스 엘시디 주식회사 액정표시장치용 어레이기판과 그 제조방법
WO2004063799A1 (fr) * 2002-12-03 2004-07-29 Quanta Display Inc. Procede de fabrication d'un reseau de transistors en couches minces
KR100904523B1 (ko) 2002-12-26 2009-06-25 엘지디스플레이 주식회사 액티브 매트릭스형 유기전계발광 소자용 박막트랜지스터
CN1331241C (zh) 2003-08-12 2007-08-08 友达光电股份有限公司 薄膜晶体管及具有此种薄膜晶体管的像素结构

Also Published As

Publication number Publication date
GB2431514B (en) 2008-03-19
US7427777B2 (en) 2008-09-23
TWI271870B (en) 2007-01-21
GB2431514A (en) 2007-04-25
GB0608742D0 (en) 2006-06-14
JP2007123794A (ja) 2007-05-17
DE102006020217A1 (de) 2007-04-26
FR2892531A1 (fr) 2007-04-27
US20070090357A1 (en) 2007-04-26
TW200717809A (en) 2007-05-01

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Legal Events

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Year of fee payment: 11

ST Notification of lapse

Effective date: 20180131