FR2883101B1 - Transistor mos nanometrique a rapport maximise entre courant a l'etat passant et courant a l'etat bloque - Google Patents

Transistor mos nanometrique a rapport maximise entre courant a l'etat passant et courant a l'etat bloque

Info

Publication number
FR2883101B1
FR2883101B1 FR0550605A FR0550605A FR2883101B1 FR 2883101 B1 FR2883101 B1 FR 2883101B1 FR 0550605 A FR0550605 A FR 0550605A FR 0550605 A FR0550605 A FR 0550605A FR 2883101 B1 FR2883101 B1 FR 2883101B1
Authority
FR
France
Prior art keywords
current
nanometric
maximized
mos transistor
state rate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0550605A
Other languages
English (en)
Other versions
FR2883101A1 (fr
Inventor
Nicolas Cavassilas
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aix Marseille Universite
Centre National de la Recherche Scientifique CNRS
Original Assignee
Centre National de la Recherche Scientifique CNRS
Universite Paul Cezanne Aix Marseille III
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS, Universite Paul Cezanne Aix Marseille III filed Critical Centre National de la Recherche Scientifique CNRS
Priority to FR0550605A priority Critical patent/FR2883101B1/fr
Priority to US11/885,900 priority patent/US20110079769A1/en
Priority to PCT/FR2006/050200 priority patent/WO2006095112A1/fr
Priority to JP2008500244A priority patent/JP2008533714A/ja
Priority to EP06726224A priority patent/EP1859485A1/fr
Publication of FR2883101A1 publication Critical patent/FR2883101A1/fr
Application granted granted Critical
Publication of FR2883101B1 publication Critical patent/FR2883101B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes
    • H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78639—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a drain or source connected to a bulk conducting substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Materials Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
FR0550605A 2005-03-08 2005-03-08 Transistor mos nanometrique a rapport maximise entre courant a l'etat passant et courant a l'etat bloque Expired - Fee Related FR2883101B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR0550605A FR2883101B1 (fr) 2005-03-08 2005-03-08 Transistor mos nanometrique a rapport maximise entre courant a l'etat passant et courant a l'etat bloque
US11/885,900 US20110079769A1 (en) 2005-03-08 2006-03-07 Nanometric MOS Transistor With Maximized Ration Between On-State Current and Off-State Current
PCT/FR2006/050200 WO2006095112A1 (fr) 2005-03-08 2006-03-07 Transistor mos nanometrique a rapport maximise entre courant a l'etat passant et courant a l'etat bloque
JP2008500244A JP2008533714A (ja) 2005-03-08 2006-03-07 オン状態での電流とオフ状態での電流との比を最大にするナノメータｍｏｓトランジスタ
EP06726224A EP1859485A1 (fr) 2005-03-08 2006-03-07 Transistor mos nanometrique a rapport maximise entre courant a l'etat passant et courant a l'etat bloque

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0550605A FR2883101B1 (fr) 2005-03-08 2005-03-08 Transistor mos nanometrique a rapport maximise entre courant a l'etat passant et courant a l'etat bloque

Publications (2)

Publication Number Publication Date
FR2883101A1 FR2883101A1 (fr) 2006-09-15
FR2883101B1 true FR2883101B1 (fr) 2007-06-08

Family

ID=35385764

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0550605A Expired - Fee Related FR2883101B1 (fr) 2005-03-08 2005-03-08 Transistor mos nanometrique a rapport maximise entre courant a l'etat passant et courant a l'etat bloque

Country Status (5)

Country Link
US (1) US20110079769A1 (fr)
EP (1) EP1859485A1 (fr)
JP (1) JP2008533714A (fr)
FR (1) FR2883101B1 (fr)
WO (1) WO2006095112A1 (fr)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2749977B1 (fr) * 1996-06-14 1998-10-09 Commissariat Energie Atomique Transistor mos a puits quantique et procedes de fabrication de celui-ci
JP2003264290A (ja) * 2002-03-08 2003-09-19 Fujitsu Ltd 半導体装置及びその製造方法
JP4920872B2 (ja) * 2002-03-28 2012-04-18 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ ナノワイヤの製造方法
US6833556B2 (en) * 2002-08-12 2004-12-21 Acorn Technologies, Inc. Insulated gate field effect transistor having passivated schottky barriers to the channel
JP2005012110A (ja) * 2003-06-20 2005-01-13 Handotai Rikougaku Kenkyu Center:Kk 極微細ｍｏｓｆｅｔ
US7015147B2 (en) * 2003-07-22 2006-03-21 Sharp Laboratories Of America, Inc. Fabrication of silicon-on-nothing (SON) MOSFET fabrication using selective etching of Si1-xGex layer

Also Published As

Publication number Publication date
WO2006095112A1 (fr) 2006-09-14
EP1859485A1 (fr) 2007-11-28
US20110079769A1 (en) 2011-04-07
FR2883101A1 (fr) 2006-09-15
JP2008533714A (ja) 2008-08-21

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20121130