FR2880191B1 - Realisation de tranchees ou puits ayant des destinations differentes dans un substrat semiconducteur - Google Patents

Realisation de tranchees ou puits ayant des destinations differentes dans un substrat semiconducteur

Info

Publication number
FR2880191B1
FR2880191B1 FR0453170A FR0453170A FR2880191B1 FR 2880191 B1 FR2880191 B1 FR 2880191B1 FR 0453170 A FR0453170 A FR 0453170A FR 0453170 A FR0453170 A FR 0453170A FR 2880191 B1 FR2880191 B1 FR 2880191B1
Authority
FR
France
Prior art keywords
trenches
wells
achieving
semiconductor substrate
different destinations
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0453170A
Other languages
English (en)
Other versions
FR2880191A1 (fr
Inventor
Christine Anceau
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0453170A priority Critical patent/FR2880191B1/fr
Priority to US11/318,369 priority patent/US7560391B2/en
Publication of FR2880191A1 publication Critical patent/FR2880191A1/fr
Application granted granted Critical
Publication of FR2880191B1 publication Critical patent/FR2880191B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76283—Lateral isolation by refilling of trenches with dielectric material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76816—Aspects relating to the layout of the pattern or to the size of vias or trenches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0805—Capacitors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
    • H01L28/91—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/66181—Conductor-insulator-semiconductor capacitors, e.g. trench capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Ceramic Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
FR0453170A 2004-12-23 2004-12-23 Realisation de tranchees ou puits ayant des destinations differentes dans un substrat semiconducteur Expired - Fee Related FR2880191B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0453170A FR2880191B1 (fr) 2004-12-23 2004-12-23 Realisation de tranchees ou puits ayant des destinations differentes dans un substrat semiconducteur
US11/318,369 US7560391B2 (en) 2004-12-23 2005-12-23 Forming of trenches or wells having different destinations in a semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0453170A FR2880191B1 (fr) 2004-12-23 2004-12-23 Realisation de tranchees ou puits ayant des destinations differentes dans un substrat semiconducteur

Publications (2)

Publication Number Publication Date
FR2880191A1 FR2880191A1 (fr) 2006-06-30
FR2880191B1 true FR2880191B1 (fr) 2007-03-16

Family

ID=34952988

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0453170A Expired - Fee Related FR2880191B1 (fr) 2004-12-23 2004-12-23 Realisation de tranchees ou puits ayant des destinations differentes dans un substrat semiconducteur

Country Status (2)

Country Link
US (1) US7560391B2 (fr)
FR (1) FR2880191B1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101946304B (zh) * 2008-02-20 2013-06-05 Nxp股份有限公司 包括在衬底的两个面上形成的平面形状电容器的超高密度容量
US8652925B2 (en) 2010-07-19 2014-02-18 International Business Machines Corporation Method of fabricating isolated capacitors and structure thereof
CN102956535B (zh) * 2011-08-24 2015-05-13 中芯国际集成电路制造(北京)有限公司 半导体器件及其制造方法
EP2820661B1 (fr) 2012-02-28 2023-08-30 Teknologian tutkimuskeskus VTT Oy Condensateur électrochimique intégrable
EP4016566B1 (fr) * 2020-12-15 2023-08-02 Murata Manufacturing Co., Ltd. Dispositif électrique comprenant un condensateur 3d et une région entourée d'une ouverture traversante
US20230296994A1 (en) * 2022-03-21 2023-09-21 Infineon Technologies Ag Back Side to Front Side Alignment on a Semiconductor Wafer with Special Structures

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5049521A (en) * 1989-11-30 1991-09-17 Silicon General, Inc. Method for forming dielectrically isolated semiconductor devices with contact to the wafer substrate
JP3157357B2 (ja) * 1993-06-14 2001-04-16 株式会社東芝 半導体装置
DE19514834C1 (de) * 1995-04-21 1997-01-09 Siemens Ag Festwertspeicherzellenanordnung und Verfahren zu deren Herstellung
US5909618A (en) * 1997-07-08 1999-06-01 Micron Technology, Inc. Method of making memory cell with vertical transistor and buried word and body lines
US6207534B1 (en) * 1999-09-03 2001-03-27 Chartered Semiconductor Manufacturing Ltd. Method to form narrow and wide shallow trench isolations with different trench depths to eliminate isolation oxide dishing
JP2001176975A (ja) * 1999-12-17 2001-06-29 Mitsubishi Electric Corp 半導体装置及びその製造方法
CN100435347C (zh) * 2000-09-27 2008-11-19 Nup2公司 半导体器件的制造
US6794254B1 (en) * 2003-05-15 2004-09-21 Taiwan Semiconductor Manufacturing Company Embedded dual-port DRAM process
TWI316282B (en) * 2003-07-23 2009-10-21 Nanya Technology Corp A method of fabricating a trench isolation with high aspect ratio

Also Published As

Publication number Publication date
FR2880191A1 (fr) 2006-06-30
US7560391B2 (en) 2009-07-14
US20060141793A1 (en) 2006-06-29

Similar Documents

Publication Publication Date Title
NO20161397A1 (no) Ikke-nukleosidbaserte revers-transkriptase-inhibitorer
FR2884147B3 (fr) Substrat microbicide
DE602005011575D1 (de) Embolektomie-fangschleuse
DE602006017872D1 (de) Lichtemittierende halbleitervorrichtung auf basis einer galliumnitridverbindung
DE602005008881D1 (de) Schottkydiode mit vertikaler Barriere
DE602005016201D1 (de) Substrat mit einer Verformungsverhinderungsschicht
ITUD20040133A1 (it) Benna motrice, in particolare benna motrice
DE602005008862D1 (de) Schaufel
NL1026686A1 (nl) Het verbeteren van een zachte laag.
FR2880191B1 (fr) Realisation de tranchees ou puits ayant des destinations differentes dans un substrat semiconducteur
FR2866983B1 (fr) Realisation d'une entite en materiau semiconducteur sur substrat
DE502004007108D1 (de) Multifunktion-Substratsträger
FR2905799B1 (fr) Realisation d'un substrat en gan
TWI371087B (en) Graded semiconductor layer
EP1743961A4 (fr) Substrat semi-conducteur pour compos
DE112005000885A5 (de) Putzeimerdeckel
FI20041698A0 (fi) Lukko
ITRM20040321A1 (it) Disposizione di interconnessione differenziale per semiconduttori.
DE102004058335A8 (de) Substrat
UY29159A1 (es) Teja con superficie de multiple nivel
DE502004007853D1 (de) Strahlungsemittierendes halbleiterbauelement
ATA6492004A (de) Schneepflug
ES1058397Y (es) Arqueta prefabricada.
FR2872630B1 (fr) Circuit integre tolerant au phenomene de verrouillage
BRPI0400171B1 (pt) Broca odontológica

Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20090831