DE602005008881D1 - Schottkydiode mit vertikaler Barriere - Google Patents

Schottkydiode mit vertikaler Barriere

Info

Publication number
DE602005008881D1
DE602005008881D1 DE602005008881T DE602005008881T DE602005008881D1 DE 602005008881 D1 DE602005008881 D1 DE 602005008881D1 DE 602005008881 T DE602005008881 T DE 602005008881T DE 602005008881 T DE602005008881 T DE 602005008881T DE 602005008881 D1 DE602005008881 D1 DE 602005008881D1
Authority
DE
Germany
Prior art keywords
schottky diode
vertical barrier
barrier
vertical
schottky
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005008881T
Other languages
English (en)
Inventor
Frederic Lanois
Sylvain Nizou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Publication of DE602005008881D1 publication Critical patent/DE602005008881D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H01L29/8725—Schottky diodes of the trench MOS barrier type [TMBS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
DE602005008881T 2004-12-23 2005-12-22 Schottkydiode mit vertikaler Barriere Active DE602005008881D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0453183A FR2880193A1 (fr) 2004-12-23 2004-12-23 Diode schottky a barriere verticale

Publications (1)

Publication Number Publication Date
DE602005008881D1 true DE602005008881D1 (de) 2008-09-25

Family

ID=34952989

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005008881T Active DE602005008881D1 (de) 2004-12-23 2005-12-22 Schottkydiode mit vertikaler Barriere

Country Status (5)

Country Link
US (1) US7622752B2 (de)
EP (1) EP1675184B1 (de)
CN (1) CN100492667C (de)
DE (1) DE602005008881D1 (de)
FR (1) FR2880193A1 (de)

Families Citing this family (16)

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US7671439B2 (en) * 2005-02-11 2010-03-02 Alpha & Omega Semiconductor, Ltd. Junction barrier Schottky (JBS) with floating islands
US7737522B2 (en) * 2005-02-11 2010-06-15 Alpha & Omega Semiconductor, Ltd. Trench junction barrier controlled Schottky device with top and bottom doped regions for enhancing forward current in a vertical direction
US8080848B2 (en) 2006-05-11 2011-12-20 Fairchild Semiconductor Corporation High voltage semiconductor device with lateral series capacitive structure
US8435873B2 (en) 2006-06-08 2013-05-07 Texas Instruments Incorporated Unguarded Schottky barrier diodes with dielectric underetch at silicide interface
JP2009059764A (ja) * 2007-08-30 2009-03-19 Panasonic Corp ショットキーバリアダイオードおよびその製造方法
US8338906B2 (en) * 2008-01-30 2012-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Schottky device
US8193565B2 (en) 2008-04-18 2012-06-05 Fairchild Semiconductor Corporation Multi-level lateral floating coupled capacitor transistor structures
JP2010098189A (ja) * 2008-10-17 2010-04-30 Toshiba Corp 半導体装置
US8125056B2 (en) * 2009-09-23 2012-02-28 Vishay General Semiconductor, Llc Double trench rectifier
US8624302B2 (en) * 2010-02-05 2014-01-07 Fairchild Semiconductor Corporation Structure and method for post oxidation silicon trench bottom shaping
DE102010028203A1 (de) * 2010-04-26 2011-10-27 Robert Bosch Gmbh Gleichrichter-Brückenschaltung
US8362585B1 (en) * 2011-07-15 2013-01-29 Alpha & Omega Semiconductor, Inc. Junction barrier Schottky diode with enforced upper contact structure and method for robust packaging
US8736013B2 (en) 2012-04-19 2014-05-27 Fairchild Semiconductor Corporation Schottky diode with opposite-polarity schottky diode field guard ring
JP6237336B2 (ja) * 2014-02-27 2017-11-29 住友電気工業株式会社 ワイドバンドギャップ半導体装置
WO2016178837A1 (en) * 2015-05-07 2016-11-10 Finscale Inc. Semiconductor devices made of vertical planar elements and methods of their fabrication
CN109346406A (zh) * 2018-11-23 2019-02-15 江苏新广联半导体有限公司 一种并联结构的氮化镓sbd的制作方法

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US3977910A (en) * 1973-12-14 1976-08-31 General Electric Company Deep finger diodes
US4031607A (en) * 1974-05-28 1977-06-28 General Electric Company Minority carrier isolation barriers for semiconductor devices
US4247881A (en) * 1979-04-02 1981-01-27 Sprague Electric Company Discoidal monolithic ceramic capacitor
GB2090465B (en) * 1980-12-29 1985-11-13 Gen Electric Production of p-n junctions by the electromigration method
FR2501913A1 (fr) * 1981-03-10 1982-09-17 Thomson Csf Transistor a effet de champ de type planar comportant des electrodes a puits metallises et procede de fabrication de ce transistor
US4721986A (en) * 1984-02-21 1988-01-26 International Rectifier Corporation Bidirectional output semiconductor field effect transistor and method for its maufacture
DE3751278T2 (de) * 1986-12-11 1996-01-25 Gte Laboratories Inc Transistor mit Zusammensetzung aus Halbleitermaterial und aus leitendem Material.
US4724223A (en) * 1986-12-11 1988-02-09 Gte Laboratories Incorporated Method of making electrical contacts
US4984037A (en) * 1986-12-11 1991-01-08 Gte Laboratories Incorporated Semiconductor device with conductive rectifying rods
US5270252A (en) * 1988-10-25 1993-12-14 United States Of America As Represented By The Secretary Of The Navy Method of forming platinum and platinum silicide schottky contacts on beta-silicon carbide
DE4001350C2 (de) * 1989-01-18 1993-10-07 Nissan Motor Halbleitereinrichtung
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EP0465151B1 (de) * 1990-06-29 1998-08-26 Canon Kabushiki Kaisha Verfahren zum Herstellen einer Halbleiteranordnung mit Schottky-übergang
US5098862A (en) * 1990-11-07 1992-03-24 Gte Laboratories Incorporated Method of making ohmic electrical contact to a matrix of semiconductor material
US6078090A (en) * 1997-04-02 2000-06-20 Siliconix Incorporated Trench-gated Schottky diode with integral clamping diode
JP3287269B2 (ja) * 1997-06-02 2002-06-04 富士電機株式会社 ダイオードとその製造方法
DE19740195C2 (de) * 1997-09-12 1999-12-02 Siemens Ag Halbleiterbauelement mit Metall-Halbleiterübergang mit niedrigem Sperrstrom
FR2797094B1 (fr) * 1999-07-28 2001-10-12 St Microelectronics Sa Procede de fabrication de composants unipolaires
JP2001119022A (ja) * 1999-10-20 2001-04-27 Fuji Electric Co Ltd 半導体装置及びその製造方法
JP4765012B2 (ja) * 2000-02-09 2011-09-07 富士電機株式会社 半導体装置及びその製造方法
JP4240752B2 (ja) * 2000-05-01 2009-03-18 富士電機デバイステクノロジー株式会社 半導体装置
JP2002100772A (ja) * 2000-07-17 2002-04-05 Toshiba Corp 電力用半導体装置及びその製造方法
US6707127B1 (en) * 2000-08-31 2004-03-16 General Semiconductor, Inc. Trench schottky rectifier
US6593620B1 (en) * 2000-10-06 2003-07-15 General Semiconductor, Inc. Trench DMOS transistor with embedded trench schottky rectifier
US6677641B2 (en) * 2001-10-17 2004-01-13 Fairchild Semiconductor Corporation Semiconductor structure with improved smaller forward voltage loss and higher blocking capability
WO2002067333A1 (en) * 2001-02-21 2002-08-29 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method of manufacturing the same
WO2003096433A1 (en) * 2002-05-10 2003-11-20 University College Cork-National University Of Irland, Cork. 'A Planar Schottky Diode and Manufacturing Method'
US7053404B2 (en) * 2003-12-05 2006-05-30 Stmicroelectronics S.A. Active semiconductor component with an optimized surface area
US7683454B2 (en) * 2003-12-05 2010-03-23 Stmicroelectronics S.A. MOS power component with a reduced surface area
EP1702366A1 (de) * 2003-12-05 2006-09-20 STMicroelectronics S.A. Aktive halbleiterkomponente mit kleiner oberfläche
US20050121691A1 (en) * 2003-12-05 2005-06-09 Jean-Luc Morand Active semiconductor component with a reduced surface area
US7166867B2 (en) * 2003-12-05 2007-01-23 International Rectifier Corporation III-nitride device with improved layout geometry

Also Published As

Publication number Publication date
EP1675184A1 (de) 2006-06-28
US20060138450A1 (en) 2006-06-29
FR2880193A1 (fr) 2006-06-30
CN100492667C (zh) 2009-05-27
CN1822398A (zh) 2006-08-23
US7622752B2 (en) 2009-11-24
EP1675184B1 (de) 2008-08-13

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Legal Events

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