FR2860645B1 - Element a effet de magnetoresistance, procede pour sa fabrication, memoire magnetique et procede pour sa fabrication - Google Patents

Element a effet de magnetoresistance, procede pour sa fabrication, memoire magnetique et procede pour sa fabrication

Info

Publication number
FR2860645B1
FR2860645B1 FR0409610A FR0409610A FR2860645B1 FR 2860645 B1 FR2860645 B1 FR 2860645B1 FR 0409610 A FR0409610 A FR 0409610A FR 0409610 A FR0409610 A FR 0409610A FR 2860645 B1 FR2860645 B1 FR 2860645B1
Authority
FR
France
Prior art keywords
manufacturing
same
magnetic memory
effect element
magnetoresistance effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0409610A
Other languages
English (en)
Other versions
FR2860645A1 (fr
Inventor
Kojiro Yagami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of FR2860645A1 publication Critical patent/FR2860645A1/fr
Application granted granted Critical
Publication of FR2860645B1 publication Critical patent/FR2860645B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
    • H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
  • Thin Magnetic Films (AREA)
FR0409610A 2003-09-12 2004-09-10 Element a effet de magnetoresistance, procede pour sa fabrication, memoire magnetique et procede pour sa fabrication Expired - Fee Related FR2860645B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003320923A JP2005093488A (ja) 2003-09-12 2003-09-12 磁気抵抗効果素子とその製造方法、および磁気メモリ装置とその製造方法

Publications (2)

Publication Number Publication Date
FR2860645A1 FR2860645A1 (fr) 2005-04-08
FR2860645B1 true FR2860645B1 (fr) 2009-11-27

Family

ID=34269943

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0409610A Expired - Fee Related FR2860645B1 (fr) 2003-09-12 2004-09-10 Element a effet de magnetoresistance, procede pour sa fabrication, memoire magnetique et procede pour sa fabrication

Country Status (5)

Country Link
US (1) US7193284B2 (fr)
JP (1) JP2005093488A (fr)
KR (1) KR20050027008A (fr)
FR (1) FR2860645B1 (fr)
TW (1) TWI287311B (fr)

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US7242045B2 (en) * 2004-02-19 2007-07-10 Grandis, Inc. Spin transfer magnetic element having low saturation magnetization free layers
WO2005098953A1 (fr) * 2004-03-31 2005-10-20 Nec Corporation Procédé de contrôle de direction de magnétisation et mram utilisant ledit procédé
JP2007048790A (ja) * 2005-08-05 2007-02-22 Sony Corp 記憶素子及びメモリ
US7929342B2 (en) 2005-08-15 2011-04-19 Nec Corporation Magnetic memory cell, magnetic random access memory, and data read/write method for magnetic random access memory
JP2007080952A (ja) * 2005-09-12 2007-03-29 Fuji Electric Holdings Co Ltd 多値記録スピン注入磁化反転素子およびこれを用いた装置
JP4187021B2 (ja) * 2005-12-02 2008-11-26 ソニー株式会社 記憶素子及びメモリ
JP5007509B2 (ja) * 2006-02-08 2012-08-22 ソニー株式会社 磁気記憶装置の製造方法
KR100754397B1 (ko) * 2006-02-22 2007-08-31 삼성전자주식회사 마그네틱 도메인 이동을 이용한 자기메모리
JPWO2007119446A1 (ja) 2006-03-24 2009-08-27 日本電気株式会社 Ｍｒａｍ、及びｍｒａｍのデータ読み書き方法
JP2007266498A (ja) 2006-03-29 2007-10-11 Toshiba Corp 磁気記録素子及び磁気メモリ
WO2007119708A1 (fr) 2006-04-11 2007-10-25 Nec Corporation Mémoire vive magnétique
WO2008018266A1 (fr) 2006-08-07 2008-02-14 Nec Corporation MRAM à ligne de commande de mots à potentiel variable
WO2008047536A1 (fr) 2006-10-16 2008-04-24 Nec Corporation Cellule mémoire magnétique et mémoire vive magnétique
US8300456B2 (en) 2006-12-06 2012-10-30 Nec Corporation Magnetic random access memory and method of manufacturing the same
WO2008102650A1 (fr) 2007-02-21 2008-08-28 Nec Corporation Dispositif de stockage semi-conducteur
JP5201538B2 (ja) 2007-03-07 2013-06-05 日本電気株式会社 磁気ランダムアクセスメモリ
US8315087B2 (en) 2007-03-29 2012-11-20 Nec Corporation Magnetic random access memory
WO2009001706A1 (fr) 2007-06-25 2008-12-31 Nec Corporation Élément magnétorésistif et mémoire magnétique à accès aléatoire
WO2009019947A1 (fr) 2007-08-03 2009-02-12 Nec Corporation Mémoire vive à paroi magnétique
US8194436B2 (en) 2007-09-19 2012-06-05 Nec Corporation Magnetic random access memory, write method therefor, and magnetoresistance effect element
US8497559B2 (en) * 2007-10-10 2013-07-30 Magic Technologies, Inc. MRAM with means of controlling magnetic anisotropy
WO2009093387A1 (fr) 2008-01-25 2009-07-30 Nec Corporation Mémoire vive magnétique (mram) et son procédé d'initialisation
US8363461B2 (en) 2008-07-10 2013-01-29 Nec Corporation Magnetic random access memory, method of initializing magnetic random access memory and method of writing magnetic random access memory
WO2010007893A1 (fr) 2008-07-15 2010-01-21 日本電気株式会社 Mémoire vive magnétique et son procédé d'initialisation
US8537604B2 (en) 2008-10-20 2013-09-17 Nec Corporation Magnetoresistance element, MRAM, and initialization method for magnetoresistance element
JP5459227B2 (ja) 2008-12-25 2014-04-02 日本電気株式会社 磁気メモリ素子及び磁気ランダムアクセスメモリ
US8559214B2 (en) 2008-12-25 2013-10-15 Nec Corporation Magnetic memory device and magnetic random access memory
US8130534B2 (en) * 2009-01-08 2012-03-06 Qualcomm Incorporated System and method to read and write data a magnetic tunnel junction element
US8553449B2 (en) 2009-01-09 2013-10-08 Micron Technology, Inc. STT-MRAM cell structures
JP5058206B2 (ja) * 2009-04-27 2012-10-24 株式会社東芝 磁気抵抗素子の製造方法
JP5786341B2 (ja) 2010-09-06 2015-09-30 ソニー株式会社 記憶素子、メモリ装置
JP5703641B2 (ja) * 2010-09-09 2015-04-22 ソニー株式会社 記憶素子及びメモリ
JP5686626B2 (ja) 2011-02-22 2015-03-18 ルネサスエレクトロニクス株式会社 磁気メモリ及びその製造方法
US9634237B2 (en) 2014-12-23 2017-04-25 Qualcomm Incorporated Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices
US10121960B2 (en) 2016-10-17 2018-11-06 Samsung Electronics Co., Ltd. Method and system for providing magnetic junctions usable in spin transfer torque applications utilizing interstitial glass-forming agent(s)
CN111933196B (zh) * 2019-05-13 2022-06-17 上海交通大学 基于巨磁阻抗效应的层合物及其应用

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Publication number Priority date Publication date Assignee Title
US5343422A (en) * 1993-02-23 1994-08-30 International Business Machines Corporation Nonvolatile magnetoresistive storage device using spin valve effect
JPH10134439A (ja) * 1996-10-31 1998-05-22 Sony Corp 光磁気記録媒体の製造方法
JP3112850B2 (ja) * 1997-01-13 2000-11-27 学校法人早稲田大学 Ｃｏ−Ｎｉ−Ｆｅを主成分とする軟磁性薄膜，その製造方法，それを用いた磁気ヘッド及び磁気記憶装置
JP4309075B2 (ja) * 2000-07-27 2009-08-05 株式会社東芝 磁気記憶装置
FR2817999B1 (fr) * 2000-12-07 2003-01-10 Commissariat Energie Atomique Dispositif magnetique a polarisation de spin et a empilement(s) tri-couche(s) et memoire utilisant ce dispositif
JP2002246566A (ja) 2001-02-14 2002-08-30 Sony Corp 磁気メモリ装置
JP2003048614A (ja) 2001-08-02 2003-02-21 Ykk Corp パーツフィーダの制御方法
JP4100025B2 (ja) * 2002-04-09 2008-06-11 ソニー株式会社 磁気抵抗効果素子及び磁気メモリ装置
JP4487472B2 (ja) * 2002-07-05 2010-06-23 株式会社日立製作所 磁気抵抗効果素子、及びこれを備える磁気ヘッド、磁気記録装置、磁気メモリ
US20040038082A1 (en) * 2002-08-26 2004-02-26 Toshihiro Tsumori Substrate for perpendicular magnetic recording hard disk medium and method for producing the same
US7245562B2 (en) * 2003-08-25 2007-07-17 Koninklijke Philips Electronics N.V. Method and device for high-speed magnetic recording

Also Published As

Publication number Publication date
TWI287311B (en) 2007-09-21
US20050057992A1 (en) 2005-03-17
JP2005093488A (ja) 2005-04-07
US7193284B2 (en) 2007-03-20
FR2860645A1 (fr) 2005-04-08
TW200522403A (en) 2005-07-01
KR20050027008A (ko) 2005-03-17

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Effective date: 20140530