FR2851259B1 - Procede de fabrication de monocristaux hexagonaux et leur utilisation comme substrat pour des composants semi-conducteurs. - Google Patents
Procede de fabrication de monocristaux hexagonaux et leur utilisation comme substrat pour des composants semi-conducteurs.Info
- Publication number
- FR2851259B1 FR2851259B1 FR0401612A FR0401612A FR2851259B1 FR 2851259 B1 FR2851259 B1 FR 2851259B1 FR 0401612 A FR0401612 A FR 0401612A FR 0401612 A FR0401612 A FR 0401612A FR 2851259 B1 FR2851259 B1 FR 2851259B1
- Authority
- FR
- France
- Prior art keywords
- monocrystals
- hexagonal
- substrate
- production
- semiconductor components
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/20—Aluminium oxides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2003106801 DE10306801A1 (de) | 2003-02-18 | 2003-02-18 | Verfahren zur Herstellung von hexagonalen Einkristallen und deren Verwendung als Substrat für Halbleiterbauelemente |
DE10309863 | 2003-03-06 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2851259A1 FR2851259A1 (fr) | 2004-08-20 |
FR2851259B1 true FR2851259B1 (fr) | 2009-07-03 |
Family
ID=32773163
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0401612A Expired - Fee Related FR2851259B1 (fr) | 2003-02-18 | 2004-02-18 | Procede de fabrication de monocristaux hexagonaux et leur utilisation comme substrat pour des composants semi-conducteurs. |
Country Status (4)
Country | Link |
---|---|
US (1) | US7255740B2 (fr) |
JP (1) | JP2004256388A (fr) |
CH (1) | CH696907A5 (fr) |
FR (1) | FR2851259B1 (fr) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004010377A1 (de) * | 2004-03-03 | 2005-09-22 | Schott Ag | Herstellung von Substratwafern für defektarme Halbleiterbauteile, ihre Verwendung, sowie damit erhaltene Bauteile |
US7307004B2 (en) * | 2004-11-05 | 2007-12-11 | National Taiwan University | Method with mechanically strained silicon for enhancing speed of integrated circuits or devices |
JP2011011950A (ja) * | 2009-07-03 | 2011-01-20 | Showa Denko Kk | サファイア単結晶の製造方法、当該方法で得られたサファイア単結晶及びサファイア単結晶の加工方法 |
JP5729135B2 (ja) | 2010-06-17 | 2015-06-03 | 株式会社Sumco | サファイアシードおよびその製造方法、ならびにサファイア単結晶の製造方法 |
CN102021647B (zh) * | 2010-10-22 | 2012-05-30 | 北京工业大学 | 一种快速生长厘米量级红宝石晶体的方法 |
KR101285935B1 (ko) * | 2011-01-19 | 2013-07-12 | 주식회사 엘지실트론 | 저항 가열 사파이어 단결정 잉곳 성장장치, 저항 가열 사파이어 단결정 잉곳 제조방법, 사파이어 단결정 잉곳 및 사파이어 웨이퍼 |
CN102560623B (zh) * | 2012-02-09 | 2015-06-24 | 常州亿晶光电科技有限公司 | 大尺寸蓝宝石单晶的制备方法 |
US10052848B2 (en) | 2012-03-06 | 2018-08-21 | Apple Inc. | Sapphire laminates |
US20130333611A1 (en) * | 2012-06-14 | 2013-12-19 | Tivra Corporation | Lattice matching layer for use in a multilayer substrate structure |
US9879357B2 (en) | 2013-03-11 | 2018-01-30 | Tivra Corporation | Methods and systems for thin film deposition processes |
US9221289B2 (en) | 2012-07-27 | 2015-12-29 | Apple Inc. | Sapphire window |
KR101420841B1 (ko) | 2012-10-31 | 2014-07-17 | 주식회사 사파이어테크놀로지 | 사파이어 단결정 성장방법 |
US9232672B2 (en) | 2013-01-10 | 2016-01-05 | Apple Inc. | Ceramic insert control mechanism |
US9678540B2 (en) | 2013-09-23 | 2017-06-13 | Apple Inc. | Electronic component embedded in ceramic material |
US9632537B2 (en) | 2013-09-23 | 2017-04-25 | Apple Inc. | Electronic component embedded in ceramic material |
US9154678B2 (en) | 2013-12-11 | 2015-10-06 | Apple Inc. | Cover glass arrangement for an electronic device |
US9225056B2 (en) | 2014-02-12 | 2015-12-29 | Apple Inc. | Antenna on sapphire structure |
CN107407006B (zh) * | 2015-03-26 | 2020-09-01 | 京瓷株式会社 | 蓝宝石部件、及蓝宝石部件的制造方法 |
US10406634B2 (en) | 2015-07-01 | 2019-09-10 | Apple Inc. | Enhancing strength in laser cutting of ceramic components |
WO2017168643A1 (fr) * | 2016-03-30 | 2017-10-05 | 株式会社ニコン | Oxyde d'aluminium, procédé de production d'oxyde d'aluminium et élément optique |
CN113073388A (zh) * | 2019-08-21 | 2021-07-06 | 眉山博雅新材料有限公司 | 一种晶体 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE202901C (fr) | ||||
US3346344A (en) | 1965-07-12 | 1967-10-10 | Bell Telephone Labor Inc | Growth of lithium niobate crystals |
US3608050A (en) * | 1969-09-12 | 1971-09-21 | Union Carbide Corp | Production of single crystal sapphire by carefully controlled cooling from a melt of alumina |
US3715194A (en) * | 1970-10-29 | 1973-02-06 | Union Carbide Corp | Melt grown alumina crystals and process therefor |
DE2208150C3 (de) | 1972-02-22 | 1978-03-30 | Union Carbide Corp., New York, N.Y. (V.St.A.) | Synthetischer Korund-Einkristall, Verfahren zu seiner Herstellung und Vorrichtung zur Durchführung des Verfahrens |
JPS5795899A (en) * | 1980-12-09 | 1982-06-14 | Toshiba Ceramics Co Ltd | Correcting method for deformed sapphire single crystal sheet |
DD202901B1 (de) * | 1981-07-15 | 1987-10-08 | Akad Wissenschaften Ddr | Anordnung zur zuechtung oxidischer einkristalle nach dem czochralski-verfahren |
JPS59152289A (ja) * | 1983-02-16 | 1984-08-30 | Seiko Epson Corp | スタ−ブル−サフアイヤの製造方法 |
US4595598A (en) * | 1984-04-23 | 1986-06-17 | Johnson & Johnson Dental Products Company | Crystalline alumina composites |
EP0161831B1 (fr) * | 1984-04-23 | 1996-03-06 | JOHNSON & JOHNSON DENTAL PRODUCTS COMPANY | Bracket orthodontique en alumine cristalline |
US4587035A (en) * | 1985-05-20 | 1986-05-06 | Union Carbide Corporation | Process for enhancing Ti:Al2 O3 tunable laser crystal fluorescence by annealing |
US4932865A (en) * | 1988-07-18 | 1990-06-12 | Union Carbide Chemicals And Plastics Company Inc. | Crystalline orthodontic bracket |
DE69208146T2 (de) * | 1991-05-30 | 1996-06-20 | Chichibu Cement Kk | Rutil-Einkristalle sowie Verfahren zu deren Zuchtung |
JP2002145700A (ja) * | 2000-08-14 | 2002-05-22 | Nippon Telegr & Teleph Corp <Ntt> | サファイア基板および半導体素子ならびに電子部品および結晶成長方法 |
US6846434B2 (en) * | 2001-12-04 | 2005-01-25 | Landauer, Inc. | Aluminum oxide material for optical data storage |
-
2004
- 2004-02-17 US US10/781,094 patent/US7255740B2/en not_active Expired - Fee Related
- 2004-02-17 JP JP2004039187A patent/JP2004256388A/ja not_active Ceased
- 2004-02-17 CH CH00245/04A patent/CH696907A5/de not_active IP Right Cessation
- 2004-02-18 FR FR0401612A patent/FR2851259B1/fr not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CH696907A5 (de) | 2008-01-31 |
US7255740B2 (en) | 2007-08-14 |
JP2004256388A (ja) | 2004-09-16 |
FR2851259A1 (fr) | 2004-08-20 |
US20040177802A1 (en) | 2004-09-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
TP | Transmission of property | ||
ST | Notification of lapse |
Effective date: 20101029 |