FR2850205B1 - Procede de fabrication d'une memoire flash et memoire flash ainsi fabriquee - Google Patents

Procede de fabrication d'une memoire flash et memoire flash ainsi fabriquee

Info

Publication number
FR2850205B1
FR2850205B1 FR0300681A FR0300681A FR2850205B1 FR 2850205 B1 FR2850205 B1 FR 2850205B1 FR 0300681 A FR0300681 A FR 0300681A FR 0300681 A FR0300681 A FR 0300681A FR 2850205 B1 FR2850205 B1 FR 2850205B1
Authority
FR
France
Prior art keywords
flash memory
manufactured
manufacturing
flash
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0300681A
Other languages
English (en)
Other versions
FR2850205A1 (fr
Inventor
Olivier Pizzuto
Romain Laffont
Jean Michel Mirabel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0300681A priority Critical patent/FR2850205B1/fr
Priority to US10/763,044 priority patent/US7183160B2/en
Publication of FR2850205A1 publication Critical patent/FR2850205A1/fr
Application granted granted Critical
Publication of FR2850205B1 publication Critical patent/FR2850205B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
FR0300681A 2003-01-22 2003-01-22 Procede de fabrication d'une memoire flash et memoire flash ainsi fabriquee Expired - Fee Related FR2850205B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0300681A FR2850205B1 (fr) 2003-01-22 2003-01-22 Procede de fabrication d'une memoire flash et memoire flash ainsi fabriquee
US10/763,044 US7183160B2 (en) 2003-01-22 2004-01-22 Manufacturing process for a flash memory and flash memory thus produced

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0300681A FR2850205B1 (fr) 2003-01-22 2003-01-22 Procede de fabrication d'une memoire flash et memoire flash ainsi fabriquee

Publications (2)

Publication Number Publication Date
FR2850205A1 FR2850205A1 (fr) 2004-07-23
FR2850205B1 true FR2850205B1 (fr) 2005-10-07

Family

ID=32605931

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0300681A Expired - Fee Related FR2850205B1 (fr) 2003-01-22 2003-01-22 Procede de fabrication d'une memoire flash et memoire flash ainsi fabriquee

Country Status (2)

Country Link
US (1) US7183160B2 (fr)
FR (1) FR2850205B1 (fr)

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2918751B2 (ja) * 1992-10-12 1999-07-12 株式会社東芝 半導体記憶装置の製造方法
US5470773A (en) * 1994-04-25 1995-11-28 Advanced Micro Devices, Inc. Method protecting a stacked gate edge in a semiconductor device from self aligned source (SAS) etch
US5880499A (en) * 1994-11-11 1999-03-09 Nec Corporation Memory cell of a nonvolatile semiconductor device
JP3246447B2 (ja) * 1998-07-21 2002-01-15 日本電気株式会社 不揮発性半導体メモリ装置の製造方法
KR100421034B1 (ko) * 1999-04-21 2004-03-04 삼성전자주식회사 레지스트 조성물과 이를 이용한 미세패턴 형성방법
US6348406B1 (en) * 2000-05-31 2002-02-19 Advanced Micro Devices, Inc. Method for using a low dielectric constant layer as a semiconductor anti-reflective coating
KR100381953B1 (ko) * 2001-03-16 2003-04-26 삼성전자주식회사 노어형 플래시 메모리 소자의 제조방법
US6756633B2 (en) * 2001-12-27 2004-06-29 Silicon Storage Technology, Inc. Semiconductor memory array of floating gate memory cells with horizontally oriented floating gate edges
JP2003255510A (ja) * 2002-03-01 2003-09-10 Hitachi Ltd 電子装置の製造方法
US6762011B2 (en) * 2002-04-15 2004-07-13 International Business Machines Corporation Deposition of a projection structure on a substrate using a negative mask and negative photoresist

Also Published As

Publication number Publication date
US7183160B2 (en) 2007-02-27
US20050087816A1 (en) 2005-04-28
FR2850205A1 (fr) 2004-07-23

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Legal Events

Date Code Title Description
TP Transmission of property
ST Notification of lapse

Effective date: 20100930