FR2815121B1 - Procede de revelation de defauts cristallins et/ou de champs de contraintes a l'interface d'adhesion moleculaire de deux materiaux solides - Google Patents
Procede de revelation de defauts cristallins et/ou de champs de contraintes a l'interface d'adhesion moleculaire de deux materiaux solidesInfo
- Publication number
- FR2815121B1 FR2815121B1 FR0012796A FR0012796A FR2815121B1 FR 2815121 B1 FR2815121 B1 FR 2815121B1 FR 0012796 A FR0012796 A FR 0012796A FR 0012796 A FR0012796 A FR 0012796A FR 2815121 B1 FR2815121 B1 FR 2815121B1
- Authority
- FR
- France
- Prior art keywords
- crystalline
- stress fields
- securing
- revelation
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P10/00—Bonding of wafers, substrates or parts of devices
- H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
- H10P10/128—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates by direct semiconductor to semiconductor bonding
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
- Micromachines (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Surface Treatment Of Glass (AREA)
- Processes Of Treating Macromolecular Substances (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Measurement Of Current Or Voltage (AREA)
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0012796A FR2815121B1 (fr) | 2000-10-06 | 2000-10-06 | Procede de revelation de defauts cristallins et/ou de champs de contraintes a l'interface d'adhesion moleculaire de deux materiaux solides |
| EP01974440A EP1332517B1 (fr) | 2000-10-06 | 2001-10-05 | Procede de revelation de defauts cristallins et/ou de champs de contraintes a l'interface d'adhesion moleculaire de deux materiaux solides |
| PCT/FR2001/003074 WO2002029876A1 (fr) | 2000-10-06 | 2001-10-05 | Procede de revelation de defauts cristallins et/ou de champs de contraintes a l'interface d'adhesion moleculaire de deux materiaux solides |
| US10/398,630 US7041227B2 (en) | 2000-10-06 | 2001-10-05 | Method for revealing crystalline defects and/or stress field defects at the molecular adhesion interface of two solid materials |
| AT01974440T ATE451716T1 (de) | 2000-10-06 | 2001-10-05 | Verfahren zum aufzeigen von kristallfehlern und/oder spannungsfeldern in der kontaktfläche von zwei verbundenen materialen |
| DE60140760T DE60140760D1 (de) | 2000-10-06 | 2001-10-05 | Verfahren zum aufzeigen von kristallfehlern und/oder spannungsfeldern in der kontaktfläche von zwei verbundenen materialen |
| JP2002533358A JP2004511102A (ja) | 2000-10-06 | 2001-10-05 | 2つの固体材料の分子接着界面における結晶欠陥および/または応力場の顕在化プロセス |
| JP2007302263A JP4954853B2 (ja) | 2000-10-06 | 2007-11-21 | 2つの固体材料の分子接着界面における結晶欠陥および/または応力場の顕在化プロセス |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0012796A FR2815121B1 (fr) | 2000-10-06 | 2000-10-06 | Procede de revelation de defauts cristallins et/ou de champs de contraintes a l'interface d'adhesion moleculaire de deux materiaux solides |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2815121A1 FR2815121A1 (fr) | 2002-04-12 |
| FR2815121B1 true FR2815121B1 (fr) | 2002-12-13 |
Family
ID=8855073
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR0012796A Expired - Fee Related FR2815121B1 (fr) | 2000-10-06 | 2000-10-06 | Procede de revelation de defauts cristallins et/ou de champs de contraintes a l'interface d'adhesion moleculaire de deux materiaux solides |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7041227B2 (https=) |
| EP (1) | EP1332517B1 (https=) |
| JP (2) | JP2004511102A (https=) |
| AT (1) | ATE451716T1 (https=) |
| DE (1) | DE60140760D1 (https=) |
| FR (1) | FR2815121B1 (https=) |
| WO (1) | WO2002029876A1 (https=) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004281878A (ja) * | 2003-03-18 | 2004-10-07 | Seiko Epson Corp | 半導体基板の製造方法及びこれにより製造される半導体基板、電気光学装置並びに電子機器 |
| JP2005279843A (ja) * | 2004-03-29 | 2005-10-13 | Univ Of Tokyo | 細線を含む結晶材料とその製造方法、およびこれを用いたナノ細線デバイス |
| US7495266B2 (en) * | 2004-06-16 | 2009-02-24 | Massachusetts Institute Of Technology | Strained silicon-on-silicon by wafer bonding and layer transfer |
| FR2876498B1 (fr) * | 2004-10-12 | 2008-03-14 | Commissariat Energie Atomique | Procede de realisation d'heterostructures resonnantes a transport planaire |
| FR2877662B1 (fr) | 2004-11-09 | 2007-03-02 | Commissariat Energie Atomique | Reseau de particules et procede de realisation d'un tel reseau. |
| WO2007053686A2 (en) * | 2005-11-01 | 2007-05-10 | Massachusetts Institute Of Technology | Monolithically integrated semiconductor materials and devices |
| US20070252223A1 (en) * | 2005-12-05 | 2007-11-01 | Massachusetts Institute Of Technology | Insulated gate devices and method of making same |
| FR2895391B1 (fr) * | 2005-12-27 | 2008-01-25 | Commissariat Energie Atomique | Procede d'elaboration de nanostructures ordonnees |
| FR2895419B1 (fr) | 2005-12-27 | 2008-02-22 | Commissariat Energie Atomique | Procede de realisation simplifiee d'une structure epitaxiee |
| FR2896493B1 (fr) * | 2006-01-23 | 2008-02-22 | Commissariat Energie Atomique | Procede d'elaboration d'un support pour la croissance de nanostructures allongees localisees |
| US8063397B2 (en) * | 2006-06-28 | 2011-11-22 | Massachusetts Institute Of Technology | Semiconductor light-emitting structure and graded-composition substrate providing yellow-green light emission |
| FR2903810B1 (fr) * | 2006-07-13 | 2008-10-10 | Commissariat Energie Atomique | Procede de nanostructuration de la surface d'un substrat |
| JP2009063202A (ja) * | 2007-09-05 | 2009-03-26 | Daikin Ind Ltd | 放熱器およびそれを備えた冷凍装置 |
| FR2925748B1 (fr) | 2007-12-21 | 2010-01-29 | Commissariat Energie Atomique | Support de stockage de donnees et procede associe |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2766620B1 (fr) * | 1997-07-22 | 2000-12-01 | Commissariat Energie Atomique | Realisation de microstructures ou de nanostructures sur un support |
| FR2767604B1 (fr) * | 1997-08-19 | 2000-12-01 | Commissariat Energie Atomique | Procede de traitement pour le collage moleculaire et le decollage de deux structures |
| US5981400A (en) * | 1997-09-18 | 1999-11-09 | Cornell Research Foundation, Inc. | Compliant universal substrate for epitaxial growth |
| JP3031904B2 (ja) * | 1998-02-18 | 2000-04-10 | キヤノン株式会社 | 複合部材とその分離方法、及びそれを利用した半導体基体の製造方法 |
| FR2784800B1 (fr) * | 1998-10-20 | 2000-12-01 | Commissariat Energie Atomique | Procede de realisation de composants passifs et actifs sur un meme substrat isolant |
| US6329070B1 (en) * | 1999-12-09 | 2001-12-11 | Cornell Research Foundation, Inc. | Fabrication of periodic surface structures with nanometer-scale spacings |
-
2000
- 2000-10-06 FR FR0012796A patent/FR2815121B1/fr not_active Expired - Fee Related
-
2001
- 2001-10-05 JP JP2002533358A patent/JP2004511102A/ja active Pending
- 2001-10-05 AT AT01974440T patent/ATE451716T1/de not_active IP Right Cessation
- 2001-10-05 DE DE60140760T patent/DE60140760D1/de not_active Expired - Lifetime
- 2001-10-05 EP EP01974440A patent/EP1332517B1/fr not_active Expired - Lifetime
- 2001-10-05 WO PCT/FR2001/003074 patent/WO2002029876A1/fr not_active Ceased
- 2001-10-05 US US10/398,630 patent/US7041227B2/en not_active Expired - Fee Related
-
2007
- 2007-11-21 JP JP2007302263A patent/JP4954853B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| FR2815121A1 (fr) | 2002-04-12 |
| JP2004511102A (ja) | 2004-04-08 |
| EP1332517A1 (fr) | 2003-08-06 |
| JP2008124480A (ja) | 2008-05-29 |
| JP4954853B2 (ja) | 2012-06-20 |
| ATE451716T1 (de) | 2009-12-15 |
| US7041227B2 (en) | 2006-05-09 |
| DE60140760D1 (de) | 2010-01-21 |
| EP1332517B1 (fr) | 2009-12-09 |
| US20040074866A1 (en) | 2004-04-22 |
| WO2002029876A1 (fr) | 2002-04-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |
Effective date: 20120629 |