FR2812454B1 - Photodiode multispectrale - Google Patents
Photodiode multispectraleInfo
- Publication number
- FR2812454B1 FR2812454B1 FR0109988A FR0109988A FR2812454B1 FR 2812454 B1 FR2812454 B1 FR 2812454B1 FR 0109988 A FR0109988 A FR 0109988A FR 0109988 A FR0109988 A FR 0109988A FR 2812454 B1 FR2812454 B1 FR 2812454B1
- Authority
- FR
- France
- Prior art keywords
- multispectral
- photodiode
- multispectral photodiode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14649—Infrared imagers
- H01L27/14652—Multispectral infrared imagers, having a stacked pixel-element structure, e.g. npn, npnpn or MQW structures
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10037103A DE10037103A1 (de) | 2000-07-27 | 2000-07-27 | Multispektrale Photodiode |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2812454A1 FR2812454A1 (fr) | 2002-02-01 |
FR2812454B1 true FR2812454B1 (fr) | 2005-05-20 |
Family
ID=7650728
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0109988A Expired - Lifetime FR2812454B1 (fr) | 2000-07-27 | 2001-07-26 | Photodiode multispectrale |
Country Status (5)
Country | Link |
---|---|
US (1) | US6525387B2 (fr) |
JP (1) | JP2002083995A (fr) |
DE (1) | DE10037103A1 (fr) |
FR (1) | FR2812454B1 (fr) |
GB (1) | GB2370415B (fr) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2829616B1 (fr) * | 2001-09-10 | 2004-03-12 | St Microelectronics Sa | Diode verticale de faible capacite |
US6927383B2 (en) * | 2002-07-26 | 2005-08-09 | Raytheon Company | Radiation hardened visible P-I-N detector |
AU2003254876A1 (en) * | 2002-08-09 | 2004-03-11 | Hamamatsu Photonics K.K. | Photodiode array, production method therefor, and radiation detector |
EP1569275B1 (fr) * | 2002-11-18 | 2011-03-30 | Hamamatsu Photonics K.K. | Reseau de photodiodes a retroeclairage, procede de fabrication de celui-ci et dispositif semi-conducteur |
US7810740B2 (en) * | 2002-11-18 | 2010-10-12 | Hamamatsu Photonics K.K. | Back illuminated photodiode array, manufacturing method and semiconductor device thereof |
US7453129B2 (en) | 2002-12-18 | 2008-11-18 | Noble Peak Vision Corp. | Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry |
JP4220819B2 (ja) * | 2003-03-27 | 2009-02-04 | 浜松ホトニクス株式会社 | 放射線検出器 |
DE10340515B4 (de) * | 2003-09-03 | 2007-04-19 | Carl Zeiss Optronics Gmbh | Verfahren und Einrichtung zur Inhomogenitätskorrektur und Kalibrierung von optronischen Kameras mit Hilfe aufgenommener Bilder und Darstellen physikalischer Größen |
FR2868602B1 (fr) * | 2004-04-05 | 2006-05-26 | Commissariat Energie Atomique | Circuit de detection photonique a structure mesa |
FR2879818B1 (fr) * | 2004-12-17 | 2007-04-20 | Commissariat Energie Atomique | Photodetecteur a semi-conducteur, dispositif de detection multi-spectrale d'un rayonnement electromagnetique mettant en oeuvre un tel photodetecteur, et procede de mise en oeuvre d'un tel dispositif |
US20070041187A1 (en) * | 2005-08-16 | 2007-02-22 | Cheng T T | Preset welding spot structure of a backlight module |
US8946739B2 (en) * | 2005-09-30 | 2015-02-03 | Lateral Research Limited Liability Company | Process to fabricate integrated MWIR emitter |
US20070118161A1 (en) | 2005-11-22 | 2007-05-24 | Kennedy Daniel L | Non-snag polymer ligating clip |
CN101341600B (zh) | 2005-12-26 | 2012-11-28 | 日本电气株式会社 | 半导体光学元件 |
FR2965104B1 (fr) | 2010-09-16 | 2013-06-07 | Commissariat Energie Atomique | Detecteur bispectral multicouche a photodiodes et procede de fabrication d'un tel detecteur |
JP6123397B2 (ja) * | 2013-03-18 | 2017-05-10 | 富士通株式会社 | 撮像装置 |
JP6500442B2 (ja) * | 2014-02-28 | 2019-04-17 | 住友電気工業株式会社 | アレイ型受光素子 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4639756A (en) * | 1986-05-05 | 1987-01-27 | Santa Barbara Research Center | Graded gap inversion layer photodiode array |
GB2230347A (en) * | 1987-05-15 | 1990-10-17 | Plessey Co Plc | Multi-spectral transmission coatings |
JP2942285B2 (ja) * | 1989-08-24 | 1999-08-30 | 三菱電機株式会社 | 半導体受光素子 |
DE3934246A1 (de) * | 1989-10-13 | 1991-04-25 | Messerschmitt Boelkow Blohm | Sensor aus einem diodenstapel |
US5149956A (en) * | 1991-06-12 | 1992-09-22 | Santa Barbara Research Center | Two-color radiation detector array and methods of fabricating same |
US5146297A (en) * | 1991-10-25 | 1992-09-08 | Raytheon Company | Precision voltage reference with lattice damage |
EP0635892B1 (fr) * | 1992-07-21 | 2002-06-26 | Raytheon Company | Photodétecteur en HgCdTe stable au recuit et procédé pour sa fabrication |
US5391896A (en) * | 1992-09-02 | 1995-02-21 | Midwest Research Institute | Monolithic multi-color light emission/detection device |
US5581084A (en) * | 1995-06-07 | 1996-12-03 | Santa Barbara Research Center | Simultaneous two color IR detector having common middle layer metallic contact |
US5959339A (en) * | 1996-03-19 | 1999-09-28 | Raytheon Company | Simultaneous two-wavelength p-n-p-n Infrared detector |
EP0913002B1 (fr) | 1997-04-29 | 2008-06-18 | Commissariat A L'energie Atomique | Detecteur infrarouge bicolore a coherence spatio-temporelle planaire |
US6034407A (en) * | 1998-07-31 | 2000-03-07 | Boeing North American, Inc. | Multi-spectral planar photodiode infrared radiation detector pixels |
-
2000
- 2000-07-27 DE DE10037103A patent/DE10037103A1/de not_active Ceased
-
2001
- 2001-07-06 US US09/899,057 patent/US6525387B2/en not_active Expired - Lifetime
- 2001-07-20 GB GB0117764A patent/GB2370415B/en not_active Expired - Lifetime
- 2001-07-24 JP JP2001222673A patent/JP2002083995A/ja active Pending
- 2001-07-26 FR FR0109988A patent/FR2812454B1/fr not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
GB2370415B (en) | 2004-08-04 |
US20020011640A1 (en) | 2002-01-31 |
DE10037103A1 (de) | 2002-02-14 |
FR2812454A1 (fr) | 2002-02-01 |
US6525387B2 (en) | 2003-02-25 |
GB0117764D0 (en) | 2001-09-12 |
JP2002083995A (ja) | 2002-03-22 |
GB2370415A (en) | 2002-06-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PLFP | Fee payment |
Year of fee payment: 16 |
|
PLFP | Fee payment |
Year of fee payment: 17 |
|
PLFP | Fee payment |
Year of fee payment: 18 |
|
PLFP | Fee payment |
Year of fee payment: 20 |