FR2803158B1 - Capteur d'image cmos destine a offrir une plage dynamique plus etendue - Google Patents

Capteur d'image cmos destine a offrir une plage dynamique plus etendue

Info

Publication number
FR2803158B1
FR2803158B1 FR0017194A FR0017194A FR2803158B1 FR 2803158 B1 FR2803158 B1 FR 2803158B1 FR 0017194 A FR0017194 A FR 0017194A FR 0017194 A FR0017194 A FR 0017194A FR 2803158 B1 FR2803158 B1 FR 2803158B1
Authority
FR
France
Prior art keywords
image sensor
dynamic range
cmos image
wider dynamic
wider
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR0017194A
Other languages
English (en)
Other versions
FR2803158A1 (fr
Inventor
Do Young Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of FR2803158A1 publication Critical patent/FR2803158A1/fr
Application granted granted Critical
Publication of FR2803158B1 publication Critical patent/FR2803158B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
    • H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
    • H04N3/14—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
    • H04N3/15—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
    • H04N3/155—Control of the image-sensor operation, e.g. image processing within the image-sensor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Facsimile Heads (AREA)
FR0017194A 1999-12-28 2000-12-28 Capteur d'image cmos destine a offrir une plage dynamique plus etendue Expired - Lifetime FR2803158B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR10-1999-0063879A KR100429571B1 (ko) 1999-12-28 1999-12-28 저전력화 및 화질 개선을 위한 단위 화소 회로 및 판독 회로를 갖는 이미지센서

Publications (2)

Publication Number Publication Date
FR2803158A1 FR2803158A1 (fr) 2001-06-29
FR2803158B1 true FR2803158B1 (fr) 2002-06-14

Family

ID=19631198

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0017194A Expired - Lifetime FR2803158B1 (fr) 1999-12-28 2000-12-28 Capteur d'image cmos destine a offrir une plage dynamique plus etendue

Country Status (5)

Country Link
US (1) US6952227B2 (fr)
JP (1) JP2001238133A (fr)
KR (1) KR100429571B1 (fr)
FR (1) FR2803158B1 (fr)
TW (1) TW466663B (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7057656B2 (en) * 2000-02-11 2006-06-06 Hyundai Electronics Industries Co., Ltd. Pixel for CMOS image sensor having a select shape for low pixel crosstalk
JP3992504B2 (ja) * 2002-02-04 2007-10-17 富士通株式会社 Ｃｍｏｓイメージセンサ
US7053458B2 (en) * 2002-04-30 2006-05-30 Ess Technology, Inc. Suppressing radiation charges from reaching dark signal sensor
JP3824965B2 (ja) 2002-05-17 2006-09-20 東光株式会社 固体撮像素子
JP4194544B2 (ja) * 2003-12-05 2008-12-10 キヤノン株式会社 固体撮像装置及び固体撮像装置の駆動方法
KR100640964B1 (ko) 2004-12-30 2006-11-02 동부일렉트로닉스 주식회사 시모스 이미지 센서의 단위화소 회로
KR100829383B1 (ko) * 2006-12-27 2008-05-13 동부일렉트로닉스 주식회사 시모스 이미지 센서
KR100885921B1 (ko) * 2007-06-07 2009-02-26 삼성전자주식회사 후면으로 수광하는 이미지 센서
US8736726B2 (en) 2007-06-27 2014-05-27 Micron Technology, Inc. Pixel to pixel charge copier circuit apparatus, systems, and methods
KR100871797B1 (ko) * 2007-08-27 2008-12-02 주식회사 동부하이텍 이미지 센서
FR2943178B1 (fr) * 2009-03-13 2011-08-26 New Imaging Technologies Sas Capteur matriciel a faible consommation
JP6353300B2 (ja) * 2014-07-08 2018-07-04 ソニーセミコンダクタソリューションズ株式会社 画素回路、半導体光検出装置および放射線計数装置
TWI569644B (zh) * 2015-04-20 2017-02-01 財團法人工業技術研究院 影像感測裝置、系統及其方法和電荷感測裝置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01196165A (ja) * 1988-02-01 1989-08-07 Fuji Photo Film Co Ltd 固体撮像装置
US5572074A (en) * 1995-06-06 1996-11-05 Rockwell International Corporation Compact photosensor circuit having automatic intensity range control
US5742047A (en) * 1996-10-01 1998-04-21 Xerox Corporation Highly uniform five volt CMOS image photodiode sensor array with improved contrast ratio and dynamic range
US5898168A (en) * 1997-06-12 1999-04-27 International Business Machines Corporation Image sensor pixel circuit
KR100246358B1 (ko) * 1997-09-25 2000-03-15 김영환 전자셔터를 구비한 액티브 픽셀 센서
TW421962B (en) * 1997-09-29 2001-02-11 Canon Kk Image sensing device using mos type image sensing elements
JPH11112016A (ja) * 1997-10-06 1999-04-23 Canon Inc 固体撮像装置の駆動方法とこれを用いた光電変換装置
US6297492B1 (en) * 1998-01-06 2001-10-02 Intel Corporation Fast BICMOS active-pixel sensor cell with fast NPN emitter-follower readout
TW396707B (en) 1998-02-20 2000-07-01 Canon Kk Semiconductor device
US6111245A (en) * 1998-04-22 2000-08-29 National Science Council Of Republic Of China Low voltage reverse bias arrangement for an active pixel sensor
US6130423A (en) * 1998-07-10 2000-10-10 Pixel Cam, Inc. Method and apparatus for a CMOS image sensor with a distributed amplifier
US6242728B1 (en) * 1998-08-20 2001-06-05 Foveon, Inc. CMOS active pixel sensor using native transistors

Also Published As

Publication number Publication date
TW466663B (en) 2001-12-01
KR100429571B1 (ko) 2004-05-03
FR2803158A1 (fr) 2001-06-29
JP2001238133A (ja) 2001-08-31
KR20010061385A (ko) 2001-07-07
US6952227B2 (en) 2005-10-04
US20010005224A1 (en) 2001-06-28

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