FR2777913B1 - Procede pour le decapage a sec et reacteur pour la mise en oeuvre de ce procede - Google Patents
Procede pour le decapage a sec et reacteur pour la mise en oeuvre de ce procedeInfo
- Publication number
- FR2777913B1 FR2777913B1 FR9905375A FR9905375A FR2777913B1 FR 2777913 B1 FR2777913 B1 FR 2777913B1 FR 9905375 A FR9905375 A FR 9905375A FR 9905375 A FR9905375 A FR 9905375A FR 2777913 B1 FR2777913 B1 FR 2777913B1
- Authority
- FR
- France
- Prior art keywords
- reactor
- carrying
- dry stripping
- stripping
- dry
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
- Y02C20/00—Capture or disposal of greenhouse gases
- Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/905—Cleaning of reaction chamber
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/935—Gas flow control
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- ing And Chemical Polishing (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/066,978 US6127271A (en) | 1998-04-28 | 1998-04-28 | Process for dry etching and vacuum treatment reactor |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2777913A1 FR2777913A1 (fr) | 1999-10-29 |
FR2777913B1 true FR2777913B1 (fr) | 2004-07-30 |
Family
ID=22072950
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9905375A Expired - Fee Related FR2777913B1 (fr) | 1998-04-28 | 1999-04-28 | Procede pour le decapage a sec et reacteur pour la mise en oeuvre de ce procede |
Country Status (7)
Country | Link |
---|---|
US (1) | US6127271A (fr) |
JP (1) | JP4961064B2 (fr) |
KR (1) | KR100716806B1 (fr) |
DE (1) | DE19919384A1 (fr) |
FR (1) | FR2777913B1 (fr) |
GB (1) | GB2339553B (fr) |
TW (1) | TW447006B (fr) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3433392B2 (ja) * | 1999-01-12 | 2003-08-04 | セントラル硝子株式会社 | クリーニングガス及び真空処理装置のクリーニング方法 |
US20060021633A1 (en) * | 2004-07-27 | 2006-02-02 | Applied Materials, Inc. | Closed loop clean gas control |
EP2879165A1 (fr) * | 2013-11-28 | 2015-06-03 | Solvay SA | Procédé de gravure |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3411938A (en) * | 1964-08-07 | 1968-11-19 | Sperry Rand Corp | Copper substrate cleaning and vapor coating method |
JPS63166979A (ja) * | 1986-12-26 | 1988-07-11 | Kyocera Corp | ガスエツチング方法 |
JP2574809B2 (ja) * | 1987-09-04 | 1997-01-22 | 株式会社日立製作所 | プラズマ洗浄方法 |
US5211796A (en) * | 1990-01-08 | 1993-05-18 | Lst Logic Corporation | Apparatus for performing in-situ etch of CVD chamber |
KR0176715B1 (ko) * | 1990-07-30 | 1999-04-15 | 오가 노리오 | 드라이에칭방법 |
JP2770083B2 (ja) * | 1991-01-23 | 1998-06-25 | 富士通株式会社 | 半導体基板のドライ洗浄方法 |
JP3018532B2 (ja) * | 1991-02-26 | 2000-03-13 | ソニー株式会社 | ドライエッチング方法 |
US5474650A (en) * | 1991-04-04 | 1995-12-12 | Hitachi, Ltd. | Method and apparatus for dry etching |
JP3242166B2 (ja) * | 1992-11-19 | 2001-12-25 | 株式会社日立製作所 | エッチング装置 |
CH687987A5 (de) * | 1993-05-03 | 1997-04-15 | Balzers Hochvakuum | Verfahren zur Erhoehung der Beschichtungsrate in einem Plasmaentladungsraum und Plasmakammer. |
CH687986A5 (de) * | 1993-05-03 | 1997-04-15 | Balzers Hochvakuum | Plasmabehandlungsanlage und Verfahren zu deren Betrieb. |
JPH08162437A (ja) * | 1994-11-30 | 1996-06-21 | Miyazaki Oki Electric Co Ltd | 半導体装置の製造方法 |
JPH08288223A (ja) * | 1995-04-13 | 1996-11-01 | Toshiba Corp | 薄膜の製造方法 |
JP2845773B2 (ja) * | 1995-04-27 | 1999-01-13 | 山形日本電気株式会社 | 常圧cvd装置 |
US5882424A (en) * | 1997-01-21 | 1999-03-16 | Applied Materials, Inc. | Plasma cleaning of a CVD or etch reactor using a low or mixed frequency excitation field |
US6125859A (en) * | 1997-03-05 | 2000-10-03 | Applied Materials, Inc. | Method for improved cleaning of substrate processing systems |
US5814564A (en) * | 1997-05-15 | 1998-09-29 | Vanguard International Semiconductor Corporation | Etch back method to planarize an interlayer having a critical HDP-CVD deposition process |
US6242359B1 (en) * | 1997-08-20 | 2001-06-05 | Air Liquide America Corporation | Plasma cleaning and etching methods using non-global-warming compounds |
-
1998
- 1998-04-28 US US09/066,978 patent/US6127271A/en not_active Expired - Lifetime
- 1998-06-01 TW TW087108516A patent/TW447006B/zh not_active IP Right Cessation
-
1999
- 1999-04-27 JP JP12019099A patent/JP4961064B2/ja not_active Expired - Fee Related
- 1999-04-28 KR KR1019990015266A patent/KR100716806B1/ko not_active IP Right Cessation
- 1999-04-28 FR FR9905375A patent/FR2777913B1/fr not_active Expired - Fee Related
- 1999-04-28 DE DE19919384A patent/DE19919384A1/de not_active Withdrawn
- 1999-04-28 GB GB9909805A patent/GB2339553B/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
TW447006B (en) | 2001-07-21 |
GB9909805D0 (en) | 1999-06-23 |
GB2339553B (en) | 2002-01-09 |
KR19990083571A (ko) | 1999-11-25 |
US6127271A (en) | 2000-10-03 |
JPH11354512A (ja) | 1999-12-24 |
JP4961064B2 (ja) | 2012-06-27 |
GB2339553A (en) | 2000-02-02 |
KR100716806B1 (ko) | 2007-05-09 |
FR2777913A1 (fr) | 1999-10-29 |
DE19919384A1 (de) | 1999-11-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20141231 |