FR2733631B1 - Procede de fabrication de detecteurs infrarouge a base de gainas - Google Patents
Procede de fabrication de detecteurs infrarouge a base de gainasInfo
- Publication number
- FR2733631B1 FR2733631B1 FR9504926A FR9504926A FR2733631B1 FR 2733631 B1 FR2733631 B1 FR 2733631B1 FR 9504926 A FR9504926 A FR 9504926A FR 9504926 A FR9504926 A FR 9504926A FR 2733631 B1 FR2733631 B1 FR 2733631B1
- Authority
- FR
- France
- Prior art keywords
- gainas
- manufacturing
- infrared detectors
- based infrared
- detectors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9504926A FR2733631B1 (fr) | 1995-04-25 | 1995-04-25 | Procede de fabrication de detecteurs infrarouge a base de gainas |
PCT/FR1996/000617 WO1996034418A1 (fr) | 1995-04-25 | 1996-04-23 | PROCEDE DE FABRICATION DE DETECTEURS INFRAROUGE A BASE DE GalnAs |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9504926A FR2733631B1 (fr) | 1995-04-25 | 1995-04-25 | Procede de fabrication de detecteurs infrarouge a base de gainas |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2733631A1 FR2733631A1 (fr) | 1996-10-31 |
FR2733631B1 true FR2733631B1 (fr) | 1997-05-30 |
Family
ID=9478421
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9504926A Expired - Fee Related FR2733631B1 (fr) | 1995-04-25 | 1995-04-25 | Procede de fabrication de detecteurs infrarouge a base de gainas |
Country Status (2)
Country | Link |
---|---|
FR (1) | FR2733631B1 (fr) |
WO (1) | WO1996034418A1 (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6852976B2 (en) * | 2002-09-26 | 2005-02-08 | Indigo Systems Corporation | Infrared detector array with improved spectral range and method for making the same |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4370510A (en) * | 1980-09-26 | 1983-01-25 | California Institute Of Technology | Gallium arsenide single crystal solar cell structure and method of making |
JPH0770472B2 (ja) * | 1985-02-08 | 1995-07-31 | 株式会社東芝 | 半導体基板の製造方法 |
NL8800953A (nl) * | 1988-04-13 | 1989-11-01 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderlichaam. |
US5207864A (en) * | 1991-12-30 | 1993-05-04 | Bell Communications Research | Low-temperature fusion of dissimilar semiconductors |
-
1995
- 1995-04-25 FR FR9504926A patent/FR2733631B1/fr not_active Expired - Fee Related
-
1996
- 1996-04-23 WO PCT/FR1996/000617 patent/WO1996034418A1/fr active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO1996034418A1 (fr) | 1996-10-31 |
FR2733631A1 (fr) | 1996-10-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20091231 |