FR2697946B1 - Procédé à implantation pour fabriquer un transistor à couches minces. - Google Patents

Procédé à implantation pour fabriquer un transistor à couches minces.

Info

Publication number
FR2697946B1
FR2697946B1 FR9313370A FR9313370A FR2697946B1 FR 2697946 B1 FR2697946 B1 FR 2697946B1 FR 9313370 A FR9313370 A FR 9313370A FR 9313370 A FR9313370 A FR 9313370A FR 2697946 B1 FR2697946 B1 FR 2697946B1
Authority
FR
France
Prior art keywords
manufacturing
thin film
film transistor
implantation method
implantation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9313370A
Other languages
English (en)
Other versions
FR2697946A1 (fr
Inventor
Kim Jeong Hyun
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Electronics Inc
Original Assignee
Gold Star Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gold Star Co Ltd filed Critical Gold Star Co Ltd
Publication of FR2697946A1 publication Critical patent/FR2697946A1/fr
Application granted granted Critical
Publication of FR2697946B1 publication Critical patent/FR2697946B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
FR9313370A 1992-11-09 1993-11-09 Procédé à implantation pour fabriquer un transistor à couches minces. Expired - Fee Related FR2697946B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920020945A KR940012653A (ko) 1992-11-09 1992-11-09 박막트랜지스터 제조방법

Publications (2)

Publication Number Publication Date
FR2697946A1 FR2697946A1 (fr) 1994-05-13
FR2697946B1 true FR2697946B1 (fr) 1995-10-06

Family

ID=19342740

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9313370A Expired - Fee Related FR2697946B1 (fr) 1992-11-09 1993-11-09 Procédé à implantation pour fabriquer un transistor à couches minces.

Country Status (4)

Country Link
JP (1) JPH06209011A (fr)
KR (1) KR940012653A (fr)
DE (1) DE4337871A1 (fr)
FR (1) FR2697946B1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6774397B2 (en) * 2000-05-12 2004-08-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102881712B (zh) 2012-09-28 2015-02-25 京东方科技集团股份有限公司 一种阵列基板及其制造方法、oled显示装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3520626A1 (de) * 1985-06-08 1986-12-11 Bloss, Werner Heinz, Prof. Dr.-Ing., 7065 Winterbach Halbleiter oder mischhalbleiter und verfahren zu seiner herstellung
US4782033A (en) * 1985-11-27 1988-11-01 Siemens Aktiengesellschaft Process for producing CMOS having doped polysilicon gate by outdiffusion of boron from implanted silicide gate
US4999690A (en) * 1989-12-19 1991-03-12 Texas Instruments Incorporated Transistor
JPH03297172A (ja) * 1990-04-17 1991-12-27 Nec Corp 薄膜トランジスタ及びその製造方法
JP2584117B2 (ja) * 1990-09-21 1997-02-19 松下電器産業株式会社 薄膜トランジスタの製造方法

Also Published As

Publication number Publication date
KR940012653A (ko) 1994-06-24
DE4337871A1 (de) 1994-05-11
FR2697946A1 (fr) 1994-05-13
JPH06209011A (ja) 1994-07-26

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Legal Events

Date Code Title Description
CD Change of name or company name
CJ Change in legal form
TP Transmission of property
CD Change of name or company name
ST Notification of lapse

Effective date: 20090731