FR2660457B3 - Circuit de protection contre l'effacement et la programmation d'une memoire remanente. - Google Patents

Circuit de protection contre l'effacement et la programmation d'une memoire remanente.

Info

Publication number
FR2660457B3
FR2660457B3 FR909013536A FR9013536A FR2660457B3 FR 2660457 B3 FR2660457 B3 FR 2660457B3 FR 909013536 A FR909013536 A FR 909013536A FR 9013536 A FR9013536 A FR 9013536A FR 2660457 B3 FR2660457 B3 FR 2660457B3
Authority
FR
France
Prior art keywords
programming
protective circuit
circuit against
remanent memory
against erasing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR909013536A
Other languages
English (en)
Other versions
FR2660457A1 (fr
Inventor
Alan E Baker
Richard J Durante
Owen W Jungroth
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of FR2660457A1 publication Critical patent/FR2660457A1/fr
Application granted granted Critical
Publication of FR2660457B3 publication Critical patent/FR2660457B3/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/22—Safety or protection circuits preventing unauthorised or accidental access to memory cells
    • G11C16/225—Preventing erasure, programming or reading when power supply voltages are outside the required ranges
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Security & Cryptography (AREA)
  • Read Only Memory (AREA)
FR909013536A 1990-03-29 1990-10-31 Circuit de protection contre l'effacement et la programmation d'une memoire remanente. Expired - Lifetime FR2660457B3 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/501,140 US4975883A (en) 1990-03-29 1990-03-29 Method and apparatus for preventing the erasure and programming of a nonvolatile memory

Publications (2)

Publication Number Publication Date
FR2660457A1 FR2660457A1 (fr) 1991-10-04
FR2660457B3 true FR2660457B3 (fr) 1992-07-10

Family

ID=23992291

Family Applications (1)

Application Number Title Priority Date Filing Date
FR909013536A Expired - Lifetime FR2660457B3 (fr) 1990-03-29 1990-10-31 Circuit de protection contre l'effacement et la programmation d'une memoire remanente.

Country Status (4)

Country Link
US (1) US4975883A (fr)
JP (1) JPH04221497A (fr)
FR (1) FR2660457B3 (fr)
GB (1) GB2242550B (fr)

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5345422A (en) * 1990-07-31 1994-09-06 Texas Instruments Incorporated Power up detection circuit
DE69120483T2 (de) * 1990-08-17 1996-11-14 Sgs Thomson Microelectronics Halbleiter-Speicher mit unterdrücktem Testmodus-Eingang während des Strom-Einschaltens
US5295255A (en) * 1991-02-22 1994-03-15 Electronic Professional Services, Inc. Method and apparatus for programming a solid state processor with overleaved array memory modules
US5103425A (en) * 1991-03-11 1992-04-07 Motorola, Inc. Zener regulated programming circuit for a nonvolatile memory
JPH06236694A (ja) * 1991-05-07 1994-08-23 Intel Corp 高電圧レベル変換回路
IT1258242B (it) * 1991-11-07 1996-02-22 Samsung Electronics Co Ltd Dispositivo di memoria a semiconduttore includente circuiteria di pompaggio della tensione di alimentazione
EP0961290B1 (fr) * 1991-12-09 2001-11-14 Fujitsu Limited Mémoire-Flash avec effacement amélioré et circuit associé
US5657332A (en) 1992-05-20 1997-08-12 Sandisk Corporation Soft errors handling in EEPROM devices
FR2694448B1 (fr) * 1992-07-31 1994-10-07 Sgs Thomson Microelectronics Dispositif de protection d'un circuit intégré contre les coupures d'alimentation.
US5301161A (en) * 1993-01-12 1994-04-05 Intel Corporation Circuitry for power supply voltage detection and system lockout for a nonvolatile memory
JPH06251593A (ja) * 1993-02-24 1994-09-09 Matsushita Electron Corp フラッシュメモリの消去あるいは書き込み制御方法
JP3236105B2 (ja) * 1993-03-17 2001-12-10 富士通株式会社 不揮発性半導体記憶装置及びその動作試験方法
US5357458A (en) * 1993-06-25 1994-10-18 Advanced Micro Devices, Inc. System for allowing a content addressable memory to operate with multiple power voltage levels
EP0631284B1 (fr) * 1993-06-28 1997-09-17 STMicroelectronics S.r.l. Circuit de protection pour les dispositifs comprenant des mémoires non-volatiles
US5420798A (en) * 1993-09-30 1995-05-30 Macronix International Co., Ltd. Supply voltage detection circuit
WO1995009483A1 (fr) * 1993-09-30 1995-04-06 Macronix International Co., Ltd. Circuit de detection de tension ameliore
EP0661714B1 (fr) * 1993-12-31 1999-06-23 STMicroelectronics S.r.l. Dispositif à circuit et procédé correspondant pour la remise à zéro des dispositifs de mémoire non volatiles, électriquement programmables
EP0661713B1 (fr) * 1993-12-31 1999-06-09 STMicroelectronics S.r.l. Circuit de détection de chute de tension d'alimentation
JP3566745B2 (ja) * 1994-01-25 2004-09-15 新日本製鐵株式会社 電圧変換装置
EP0700048B1 (fr) 1994-08-31 2001-04-04 STMicroelectronics S.r.l. Circuit d'alimentation de tension à deux sources
US5537360A (en) * 1994-09-16 1996-07-16 Dallas Semiconductor Corporation Programmable power supply systems and methods providing a write protected memory having multiple interface capability
DE69525554T2 (de) * 1994-10-19 2002-06-20 Intel Corp Spannungsversorgungen für flash-speicher
US5594360A (en) * 1994-10-19 1997-01-14 Intel Corporation Low current reduced area programming voltage detector for flash memory
US5495453A (en) * 1994-10-19 1996-02-27 Intel Corporation Low power voltage detector circuit including a flash memory cell
GB9423046D0 (en) * 1994-11-15 1995-01-04 Sgs Thomson Microelectronics A voltage reference circuit
GB9423033D0 (en) * 1994-11-15 1995-01-04 Sgs Thomson Microelectronics A voltage reference circuit
US5539337A (en) * 1994-12-30 1996-07-23 Intel Corporation Clock noise filter for integrated circuits
US6108237A (en) * 1997-07-17 2000-08-22 Micron Technology, Inc. Fast-sensing amplifier for flash memory
WO1996033496A1 (fr) * 1995-04-21 1996-10-24 Advanced Micro Devices, Inc. Source de tension reference pour cellule memoire mos complementaire dotee de transistors pmos et nmos a grille flottante commune
US5594686A (en) * 1995-12-29 1997-01-14 Intel Corporation Method and apparatus for protecting data stored in flash memory
US5661677A (en) 1996-05-15 1997-08-26 Micron Electronics, Inc. Circuit and method for on-board programming of PRD Serial EEPROMS
US5959926A (en) * 1996-06-07 1999-09-28 Dallas Semiconductor Corp. Programmable power supply systems and methods providing a write protected memory having multiple interface capability
US5943263A (en) * 1997-01-08 1999-08-24 Micron Technology, Inc. Apparatus and method for programming voltage protection in a non-volatile memory system
US5896338A (en) * 1997-04-11 1999-04-20 Intel Corporation Input/output power supply detection scheme for flash memory
US6628552B1 (en) 1997-04-11 2003-09-30 Intel Corporation Self-configuring input buffer on flash memories
US5909449A (en) * 1997-09-08 1999-06-01 Invox Technology Multibit-per-cell non-volatile memory with error detection and correction
US6011679A (en) * 1998-09-30 2000-01-04 Digital Equipment Corp. Methods and apparatus for controlling a power supply with improved techniques for providing protection limits
US6629047B1 (en) * 2000-03-30 2003-09-30 Intel Corporation Method and apparatus for flash voltage detection and lockout
DE10223608A1 (de) * 2002-05-27 2003-12-11 Valeo Schalter & Sensoren Gmbh EEPROM und Programmier- und Löschverfahren für ein EEPROM
JP2004335057A (ja) * 2003-05-12 2004-11-25 Sharp Corp 誤作動防止装置付き半導体記憶装置とそれを用いた携帯電子機器
US7012835B2 (en) 2003-10-03 2006-03-14 Sandisk Corporation Flash memory data correction and scrub techniques
US7219263B1 (en) * 2003-10-29 2007-05-15 Qlogic, Corporation Method and system for minimizing memory corruption
US7069371B2 (en) * 2004-03-10 2006-06-27 Silicon Storage Technology, Inc. Motherboard having a non-volatile memory which is reprogrammable through a video display port and a non-volatile memory switchable between two communication protocols
US7669190B2 (en) 2004-05-18 2010-02-23 Qlogic, Corporation Method and system for efficiently recording processor events in host bus adapters
DE102005030612B4 (de) * 2005-06-30 2014-09-11 Infineon Technologies Ag Halteeinrichtung für ein Sensorsignal, Verfahren zum Weiterleiten eines Sensorsignals und Computerprogramm
US7716538B2 (en) 2006-09-27 2010-05-11 Sandisk Corporation Memory with cell population distribution assisted read margining
US7886204B2 (en) 2006-09-27 2011-02-08 Sandisk Corporation Methods of cell population distribution assisted read margining
US7477547B2 (en) * 2007-03-28 2009-01-13 Sandisk Corporation Flash memory refresh techniques triggered by controlled scrub data reads
US7573773B2 (en) * 2007-03-28 2009-08-11 Sandisk Corporation Flash memory with data refresh triggered by controlled scrub data reads
US8123076B2 (en) * 2007-04-16 2012-02-28 Itt Manufacturing Enterprises, Inc. Appliance controller system featuring automatic beverage dispenser shutoff system
US8117378B2 (en) * 2008-10-29 2012-02-14 Microchip Technology Incorporated Preventing unintended permanent write-protection
JP5348541B2 (ja) * 2009-05-20 2013-11-20 ルネサスエレクトロニクス株式会社 半導体装置
US8687421B2 (en) 2011-11-21 2014-04-01 Sandisk Technologies Inc. Scrub techniques for use with dynamic read
KR20150054206A (ko) * 2013-11-11 2015-05-20 삼성전자주식회사 플래시 메모리의 데이터 보호 방법 및 장치
US9230689B2 (en) 2014-03-17 2016-01-05 Sandisk Technologies Inc. Finding read disturbs on non-volatile memories
US9552171B2 (en) 2014-10-29 2017-01-24 Sandisk Technologies Llc Read scrub with adaptive counter management
US9978456B2 (en) 2014-11-17 2018-05-22 Sandisk Technologies Llc Techniques for reducing read disturb in partially written blocks of non-volatile memory
US9349479B1 (en) 2014-11-18 2016-05-24 Sandisk Technologies Inc. Boundary word line operation in nonvolatile memory
US9449700B2 (en) 2015-02-13 2016-09-20 Sandisk Technologies Llc Boundary word line search and open block read methods with reduced read disturb
US9653154B2 (en) 2015-09-21 2017-05-16 Sandisk Technologies Llc Write abort detection for multi-state memories
US11081156B2 (en) * 2019-07-05 2021-08-03 Arm Limited Voltage regulation circuitry

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4433390A (en) * 1981-07-30 1984-02-21 The Bendix Corporation Power processing reset system for a microprocessor responding to sudden deregulation of a voltage
US4439804A (en) * 1982-03-22 1984-03-27 Rca Corporation Protection circuit for memory programming system
US4612632A (en) * 1984-12-10 1986-09-16 Zenith Electronics Corporation Power transition write protection for PROM
US4777626A (en) * 1984-12-22 1988-10-11 Tokyo Electric Co., Ltd. Memory device having backup power supply
US4712195A (en) * 1986-05-09 1987-12-08 Curtis Instruments, Inc. Solid-state cumulative operations measurement system
FR2604555B1 (fr) * 1986-09-30 1988-11-10 Eurotechnique Sa Circuit integre du type circuit logique comportant une memoire non volatile programmable electriquement

Also Published As

Publication number Publication date
US4975883A (en) 1990-12-04
GB9020736D0 (en) 1990-11-07
GB2242550A (en) 1991-10-02
JPH04221497A (ja) 1992-08-11
GB2242550B (en) 1994-09-28
FR2660457A1 (fr) 1991-10-04

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