FR2644292A1 - Procede de depot electrolytique sur un substrat semi-conducteur - Google Patents

Procede de depot electrolytique sur un substrat semi-conducteur Download PDF

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Publication number
FR2644292A1
FR2644292A1 FR8903027A FR8903027A FR2644292A1 FR 2644292 A1 FR2644292 A1 FR 2644292A1 FR 8903027 A FR8903027 A FR 8903027A FR 8903027 A FR8903027 A FR 8903027A FR 2644292 A1 FR2644292 A1 FR 2644292A1
Authority
FR
France
Prior art keywords
substrate
metal
electrolytic deposition
fact
process according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8903027A
Other languages
English (en)
French (fr)
Other versions
FR2644292B1 (enExample
Inventor
Thierry Braisaz
Patrice Deroux-Dauphin
Gilles Poupon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR8903027A priority Critical patent/FR2644292A1/fr
Priority to DE69010236T priority patent/DE69010236T2/de
Priority to EP90400609A priority patent/EP0387143B1/fr
Publication of FR2644292A1 publication Critical patent/FR2644292A1/fr
Application granted granted Critical
Publication of FR2644292B1 publication Critical patent/FR2644292B1/fr
Granted legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Magnetic Films (AREA)
FR8903027A 1989-03-08 1989-03-08 Procede de depot electrolytique sur un substrat semi-conducteur Granted FR2644292A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR8903027A FR2644292A1 (fr) 1989-03-08 1989-03-08 Procede de depot electrolytique sur un substrat semi-conducteur
DE69010236T DE69010236T2 (de) 1989-03-08 1990-03-06 Elektrolytisches Niederschlagsverfahren auf ein Halbeitersubstrat.
EP90400609A EP0387143B1 (fr) 1989-03-08 1990-03-06 Procédé de dépôt électrolytique sur un substrat semiconducteur

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8903027A FR2644292A1 (fr) 1989-03-08 1989-03-08 Procede de depot electrolytique sur un substrat semi-conducteur

Publications (2)

Publication Number Publication Date
FR2644292A1 true FR2644292A1 (fr) 1990-09-14
FR2644292B1 FR2644292B1 (enExample) 1994-04-22

Family

ID=9379489

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8903027A Granted FR2644292A1 (fr) 1989-03-08 1989-03-08 Procede de depot electrolytique sur un substrat semi-conducteur

Country Status (3)

Country Link
EP (1) EP0387143B1 (enExample)
DE (1) DE69010236T2 (enExample)
FR (1) FR2644292A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0702356A1 (fr) 1994-09-13 1996-03-20 Commissariat A L'energie Atomique Tête magnétique à pièces polaires horizontales

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5666250A (en) * 1993-11-23 1997-09-09 Seagate Technology, Inc. Thin film magnetic heads with thin nickel underlayers
JP3539732B2 (ja) * 1993-11-23 2004-07-07 シーゲイト テクノロジー エルエルシー 薄いニッケル下層を備えた薄膜磁気ヘッド
WO1995014991A1 (en) * 1993-11-23 1995-06-01 Seagate Technology, Inc. Thin film magnetic heads with thin nickel underlayers

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3492546A (en) * 1964-07-27 1970-01-27 Raytheon Co Contact for semiconductor device
US3553533A (en) * 1964-05-14 1971-01-05 Texas Instruments Inc Dielectric bodies with selectively formed conductive or metallic portions, composites thereof with semiconductor material and methods of making said bodies and composites
US4321283A (en) * 1979-10-26 1982-03-23 Mobil Tyco Solar Energy Corporation Nickel plating method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3553533A (en) * 1964-05-14 1971-01-05 Texas Instruments Inc Dielectric bodies with selectively formed conductive or metallic portions, composites thereof with semiconductor material and methods of making said bodies and composites
US3492546A (en) * 1964-07-27 1970-01-27 Raytheon Co Contact for semiconductor device
US4321283A (en) * 1979-10-26 1982-03-23 Mobil Tyco Solar Energy Corporation Nickel plating method

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JOURNAL OF APPLIED PHYSICS vol. 46, no. 1, janvier 1975, NEW YORK, USA pages 452 - 453; L.M. SCHIAVONE et al.: "Ohmic contacts for moderately resistive p-type InP" *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0702356A1 (fr) 1994-09-13 1996-03-20 Commissariat A L'energie Atomique Tête magnétique à pièces polaires horizontales

Also Published As

Publication number Publication date
DE69010236D1 (de) 1994-08-04
EP0387143B1 (fr) 1994-06-29
EP0387143A3 (fr) 1991-11-13
FR2644292B1 (enExample) 1994-04-22
EP0387143A2 (fr) 1990-09-12
DE69010236T2 (de) 1995-01-05

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