FR2627316B1 - Memoire eeprom " flash " a processeur de controle du port d'ordres - Google Patents

Memoire eeprom " flash " a processeur de controle du port d'ordres

Info

Publication number
FR2627316B1
FR2627316B1 FR8815692A FR8815692A FR2627316B1 FR 2627316 B1 FR2627316 B1 FR 2627316B1 FR 8815692 A FR8815692 A FR 8815692A FR 8815692 A FR8815692 A FR 8815692A FR 2627316 B1 FR2627316 B1 FR 2627316B1
Authority
FR
France
Prior art keywords
flash
port
control processor
eeprom memory
order control
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR8815692A
Other languages
English (en)
French (fr)
Other versions
FR2627316A1 (fr
Inventor
A. Kreifels Jerry
Baker Alan
Hoekstra George
Niles Kynett Virgil
Wells Steven
Winston Mark
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of FR2627316A1 publication Critical patent/FR2627316A1/fr
Application granted granted Critical
Publication of FR2627316B1 publication Critical patent/FR2627316B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/32—Timing circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
FR8815692A 1988-02-17 1988-11-30 Memoire eeprom " flash " a processeur de controle du port d'ordres Expired - Lifetime FR2627316B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15736288A 1988-02-17 1988-02-17

Publications (2)

Publication Number Publication Date
FR2627316A1 FR2627316A1 (fr) 1989-08-18
FR2627316B1 true FR2627316B1 (fr) 1993-11-26

Family

ID=22563401

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8815692A Expired - Lifetime FR2627316B1 (fr) 1988-02-17 1988-11-30 Memoire eeprom " flash " a processeur de controle du port d'ordres

Country Status (5)

Country Link
JP (1) JP2817052B2 (ja)
KR (1) KR0138791B1 (ja)
DE (1) DE3900979C2 (ja)
FR (1) FR2627316B1 (ja)
GB (1) GB2215156B (ja)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3083536B2 (ja) * 1990-06-05 2000-09-04 株式会社東芝 不揮発性半導体記憶装置の書込み回路
KR940006611B1 (ko) * 1990-08-20 1994-07-23 삼성전자 주식회사 전기적으로 소거 및 프로그램이 가능한 반도체 메모리장치의 자동 소거 최적화회로 및 방법
JPH05283708A (ja) * 1992-04-02 1993-10-29 Mitsubishi Electric Corp 不揮発性半導体記憶装置，その製造方法および試験方法
US5452251A (en) * 1992-12-03 1995-09-19 Fujitsu Limited Semiconductor memory device for selecting and deselecting blocks of word lines
US5319593A (en) * 1992-12-21 1994-06-07 National Semiconductor Corp. Memory array with field oxide islands eliminated and method
JP3065481B2 (ja) * 1994-04-22 2000-07-17 インターナショナル・ビジネス・マシーンズ・コーポレ−ション ディスク・アレイ装置およびデータの格納方法
US5682496A (en) * 1995-02-10 1997-10-28 Micron Quantum Devices, Inc. Filtered serial event controlled command port for memory
US6108237A (en) 1997-07-17 2000-08-22 Micron Technology, Inc. Fast-sensing amplifier for flash memory
US5889795A (en) * 1995-04-21 1999-03-30 International Business Machines Corporation Disk array system and method for storing data

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4412309A (en) * 1981-09-28 1983-10-25 Motorola, Inc. EEPROM With bulk zero program capability
US4408306A (en) * 1981-09-28 1983-10-04 Motorola, Inc. Column and row erasable EEPROM
US4460982A (en) * 1982-05-20 1984-07-17 Intel Corporation Intelligent electrically programmable and electrically erasable ROM
JPH0816882B2 (ja) * 1985-06-17 1996-02-21 株式会社日立製作所 半導体記憶装置
JPH0713879B2 (ja) * 1985-06-21 1995-02-15 三菱電機株式会社 半導体記憶装置

Also Published As

Publication number Publication date
DE3900979C2 (de) 2003-03-27
FR2627316A1 (fr) 1989-08-18
GB2215156A (en) 1989-09-13
JP2817052B2 (ja) 1998-10-27
GB2215156B (en) 1991-11-27
KR0138791B1 (ko) 1998-06-15
KR890013651A (ko) 1989-09-25
DE3900979A1 (de) 1989-08-31
GB8819692D0 (en) 1988-09-21
JPH0210598A (ja) 1990-01-16

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