FR2607629B1 - Procede de fabrication d'un transistor a haute tension - Google Patents

Procede de fabrication d'un transistor a haute tension

Info

Publication number
FR2607629B1
FR2607629B1 FR878716528A FR8716528A FR2607629B1 FR 2607629 B1 FR2607629 B1 FR 2607629B1 FR 878716528 A FR878716528 A FR 878716528A FR 8716528 A FR8716528 A FR 8716528A FR 2607629 B1 FR2607629 B1 FR 2607629B1
Authority
FR
France
Prior art keywords
manufacturing
high voltage
voltage transistor
transistor
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR878716528A
Other languages
English (en)
Other versions
FR2607629A1 (fr
Inventor
Shinichi Ito
Hirokazu Kaneda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Publication of FR2607629A1 publication Critical patent/FR2607629A1/fr
Application granted granted Critical
Publication of FR2607629B1 publication Critical patent/FR2607629B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/405—Resistive arrangements, e.g. resistive or semi-insulating field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2257—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/7302—Bipolar junction transistors structurally associated with other devices
    • H01L29/7304—Bipolar junction transistors structurally associated with other devices the device being a resistive element, e.g. ballasting resistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
FR878716528A 1986-11-28 1987-11-27 Procede de fabrication d'un transistor a haute tension Expired - Lifetime FR2607629B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61283727A JPS63136668A (ja) 1986-11-28 1986-11-28 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
FR2607629A1 FR2607629A1 (fr) 1988-06-03
FR2607629B1 true FR2607629B1 (fr) 1990-05-04

Family

ID=17669309

Family Applications (1)

Application Number Title Priority Date Filing Date
FR878716528A Expired - Lifetime FR2607629B1 (fr) 1986-11-28 1987-11-27 Procede de fabrication d'un transistor a haute tension

Country Status (4)

Country Link
US (1) US4892839A (fr)
JP (1) JPS63136668A (fr)
DE (1) DE3736338A1 (fr)
FR (1) FR2607629B1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5084420A (en) * 1988-10-07 1992-01-28 Mos Electronics Corp. Resistor with side wall contact
US5151376A (en) * 1990-05-31 1992-09-29 Sgs-Thomson Microelectronics, Inc. Method of making polycrystalline silicon resistors for integrated circuits

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3463977A (en) * 1966-04-21 1969-08-26 Fairchild Camera Instr Co Optimized double-ring semiconductor device
US3519901A (en) * 1968-01-29 1970-07-07 Texas Instruments Inc Bi-layer insulation structure including polycrystalline semiconductor material for integrated circuit isolation
US3576478A (en) * 1969-07-22 1971-04-27 Philco Ford Corp Igfet comprising n-type silicon substrate, silicon oxide gate insulator and p-type polycrystalline silicon gate electrode
GB1348697A (en) * 1970-07-31 1974-03-20 Fairchild Camera Instr Co Semiconductors
US3902188A (en) * 1973-08-15 1975-08-26 Rca Corp High frequency transistor
US4124933A (en) * 1974-05-21 1978-11-14 U.S. Philips Corporation Methods of manufacturing semiconductor devices
GB2011178B (en) * 1977-12-15 1982-03-17 Philips Electronic Associated Fieldeffect devices
US4178674A (en) * 1978-03-27 1979-12-18 Intel Corporation Process for forming a contact region between layers of polysilicon with an integral polysilicon resistor
US4234357A (en) * 1979-07-16 1980-11-18 Trw Inc. Process for manufacturing emitters by diffusion from polysilicon
US4244001A (en) * 1979-09-28 1981-01-06 Rca Corporation Fabrication of an integrated injection logic device with narrow basewidth
JPS5658262A (en) * 1979-10-18 1981-05-21 Toshiba Corp Semiconductor device
US4411708A (en) * 1980-08-25 1983-10-25 Trw Inc. Method of making precision doped polysilicon vertical ballast resistors by multiple implantations
DE3138960A1 (de) * 1981-09-30 1983-04-14 Siemens AG, 1000 Berlin und 8000 München Verfahren zur erzeugung elektrisch leitender schichten
FR2515427A1 (fr) * 1981-10-27 1983-04-29 Efcis Procede de fabrication de resistances de forte valeur pour circuits integres
US4467519A (en) * 1982-04-01 1984-08-28 International Business Machines Corporation Process for fabricating polycrystalline silicon film resistors
JPS59105362A (ja) * 1982-12-08 1984-06-18 Matsushita Electronics Corp 半導体装置
US4464825A (en) * 1983-02-17 1984-08-14 Harris Corporation Process for fabrication of high-speed radiation hard bipolar semiconductor devices
DE3329241A1 (de) * 1983-08-12 1985-02-21 Siemens AG, 1000 Berlin und 8000 München Leistungstransistor
JPS6057952A (ja) * 1983-09-09 1985-04-03 Toshiba Corp 半導体装置の製造方法
US4609568A (en) * 1984-07-27 1986-09-02 Fairchild Camera & Instrument Corporation Self-aligned metal silicide process for integrated circuits having self-aligned polycrystalline silicon electrodes
US4612563A (en) * 1984-07-30 1986-09-16 Sprague Electric Company High voltage integrated circuit
US4602421A (en) * 1985-04-24 1986-07-29 The United States Of America As Represented By The Secretary Of The Air Force Low noise polycrystalline semiconductor resistors by hydrogen passivation

Also Published As

Publication number Publication date
FR2607629A1 (fr) 1988-06-03
DE3736338C2 (fr) 1989-12-28
US4892839A (en) 1990-01-09
DE3736338A1 (de) 1988-06-09
JPS63136668A (ja) 1988-06-08

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Legal Events

Date Code Title Description
ST Notification of lapse