FR2568064A1 - Laser a semi-conducteur pour limiter et supprimer un bruit de sauts et reduction du courant de seuil - Google Patents

Laser a semi-conducteur pour limiter et supprimer un bruit de sauts et reduction du courant de seuil Download PDF

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Publication number
FR2568064A1
FR2568064A1 FR8511015A FR8511015A FR2568064A1 FR 2568064 A1 FR2568064 A1 FR 2568064A1 FR 8511015 A FR8511015 A FR 8511015A FR 8511015 A FR8511015 A FR 8511015A FR 2568064 A1 FR2568064 A1 FR 2568064A1
Authority
FR
France
Prior art keywords
layer
semiconductor laser
light
active layer
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8511015A
Other languages
English (en)
French (fr)
Other versions
FR2568064B1 (cs
Inventor
Takayoshi Mamine
Tsunekazu Okada
Michiro Chiba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of FR2568064A1 publication Critical patent/FR2568064A1/fr
Application granted granted Critical
Publication of FR2568064B1 publication Critical patent/FR2568064B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Lasers (AREA)
FR8511015A 1984-07-18 1985-07-18 Laser a semi-conducteur pour limiter et supprimer un bruit de sauts et reduction du courant de seuil Granted FR2568064A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59149239A JPH0685455B2 (ja) 1984-07-18 1984-07-18 半導体レーザー

Publications (2)

Publication Number Publication Date
FR2568064A1 true FR2568064A1 (fr) 1986-01-24
FR2568064B1 FR2568064B1 (cs) 1994-04-22

Family

ID=15470921

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8511015A Granted FR2568064A1 (fr) 1984-07-18 1985-07-18 Laser a semi-conducteur pour limiter et supprimer un bruit de sauts et reduction du courant de seuil

Country Status (7)

Country Link
JP (1) JPH0685455B2 (cs)
KR (2) KR860001502A (cs)
CA (1) CA1253945A (cs)
DE (1) DE3525703A1 (cs)
FR (1) FR2568064A1 (cs)
GB (1) GB2163288A (cs)
NL (1) NL8502080A (cs)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0462816A3 (en) * 1990-06-21 1992-04-15 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser producing visible light

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4323859A (en) * 1980-02-04 1982-04-06 Northern Telecom Limited Chanelled substrate double heterostructure lasers
GB2105099A (en) * 1981-07-02 1983-03-16 Standard Telephones Cables Ltd Injection laser
DE3410793A1 (de) * 1983-03-24 1984-10-04 Hitachi, Ltd., Tokio/Tokyo Halbleiter-laservorrichtung

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52143787A (en) * 1976-05-26 1977-11-30 Hitachi Ltd Semiconductor laser
EP0014588B1 (en) * 1979-02-13 1983-12-14 Fujitsu Limited A semiconductor light emitting device
JPS5640292A (en) * 1979-09-11 1981-04-16 Fujitsu Ltd Semiconductor laser
US4329189A (en) * 1980-02-04 1982-05-11 Northern Telecom Limited Channelled substrate double heterostructure lasers
JPS5736882A (ja) * 1980-08-15 1982-02-27 Nec Corp Sutoraipugatadaburuheterosetsugoreezasoshi
JPS57170584A (en) * 1981-04-15 1982-10-20 Hitachi Ltd Semiconductor laser device
JPS5967677A (ja) * 1982-07-01 1984-04-17 Semiconductor Res Found 光集積回路

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4323859A (en) * 1980-02-04 1982-04-06 Northern Telecom Limited Chanelled substrate double heterostructure lasers
GB2105099A (en) * 1981-07-02 1983-03-16 Standard Telephones Cables Ltd Injection laser
DE3410793A1 (de) * 1983-03-24 1984-10-04 Hitachi, Ltd., Tokio/Tokyo Halbleiter-laservorrichtung

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
ELECTRONICS LETTERS, vol. 17, no. 1, 8 janvier 1981, pages 17-19, Londres, GB; H. IMAI et al.: "InGaAsP/InP separated multiclad layer stripe geometry lasers emitting at 1.5 mum" *
INTERNATIONAL ELECTRON DEVICES MEETING, Washington, 5-7 décembre 1983, pages 12.2: 292-295, IEEE, New York, US; M. OKAJIMA et al.: "Transverse-mode stabilized GaAlAs laser with an embedded confining layer on optical guide by MOCVD" *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0462816A3 (en) * 1990-06-21 1992-04-15 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser producing visible light
US5161167A (en) * 1990-06-21 1992-11-03 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser producing visible light

Also Published As

Publication number Publication date
JPS6127694A (ja) 1986-02-07
GB8518182D0 (en) 1985-08-21
JPH0685455B2 (ja) 1994-10-26
KR860001502A (ko) 1986-02-26
DE3525703A1 (de) 1986-02-20
NL8502080A (nl) 1986-02-17
FR2568064B1 (cs) 1994-04-22
GB2163288A (en) 1986-02-19
CA1253945A (en) 1989-05-09
KR0128711B1 (ko) 1998-04-07

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