CA1253945A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
CA1253945A
CA1253945A CA000486983A CA486983A CA1253945A CA 1253945 A CA1253945 A CA 1253945A CA 000486983 A CA000486983 A CA 000486983A CA 486983 A CA486983 A CA 486983A CA 1253945 A CA1253945 A CA 1253945A
Authority
CA
Canada
Prior art keywords
layer
semiconductor laser
active layer
light
light absorbing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000486983A
Other languages
English (en)
French (fr)
Inventor
Takayoshi Mamine
Tsunekazu Okada
Michiro Chiba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of CA1253945A publication Critical patent/CA1253945A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Lasers (AREA)
CA000486983A 1984-07-18 1985-07-17 Semiconductor laser Expired CA1253945A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP149239/84 1984-07-18
JP59149239A JPH0685455B2 (ja) 1984-07-18 1984-07-18 半導体レーザー

Publications (1)

Publication Number Publication Date
CA1253945A true CA1253945A (en) 1989-05-09

Family

ID=15470921

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000486983A Expired CA1253945A (en) 1984-07-18 1985-07-17 Semiconductor laser

Country Status (7)

Country Link
JP (1) JPH0685455B2 (cs)
KR (2) KR860001502A (cs)
CA (1) CA1253945A (cs)
DE (1) DE3525703A1 (cs)
FR (1) FR2568064A1 (cs)
GB (1) GB2163288A (cs)
NL (1) NL8502080A (cs)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5161167A (en) * 1990-06-21 1992-11-03 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser producing visible light

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52143787A (en) * 1976-05-26 1977-11-30 Hitachi Ltd Semiconductor laser
EP0014588B1 (en) * 1979-02-13 1983-12-14 Fujitsu Limited A semiconductor light emitting device
JPS5640292A (en) * 1979-09-11 1981-04-16 Fujitsu Ltd Semiconductor laser
US4323859A (en) * 1980-02-04 1982-04-06 Northern Telecom Limited Chanelled substrate double heterostructure lasers
US4329189A (en) * 1980-02-04 1982-05-11 Northern Telecom Limited Channelled substrate double heterostructure lasers
JPS5736882A (ja) * 1980-08-15 1982-02-27 Nec Corp Sutoraipugatadaburuheterosetsugoreezasoshi
JPS57170584A (en) * 1981-04-15 1982-10-20 Hitachi Ltd Semiconductor laser device
GB2105099B (en) * 1981-07-02 1985-06-12 Standard Telephones Cables Ltd Injection laser
JPS5967677A (ja) * 1982-07-01 1984-04-17 Semiconductor Res Found 光集積回路
GB2139422B (en) * 1983-03-24 1987-06-03 Hitachi Ltd Semiconductor laser and method of fabricating the same

Also Published As

Publication number Publication date
JPS6127694A (ja) 1986-02-07
GB8518182D0 (en) 1985-08-21
JPH0685455B2 (ja) 1994-10-26
KR860001502A (ko) 1986-02-26
DE3525703A1 (de) 1986-02-20
NL8502080A (nl) 1986-02-17
FR2568064B1 (cs) 1994-04-22
GB2163288A (en) 1986-02-19
KR0128711B1 (ko) 1998-04-07
FR2568064A1 (fr) 1986-01-24

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Legal Events

Date Code Title Description
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