FR2551562A1 - - Google Patents

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Publication number
FR2551562A1
FR2551562A1 FR8413661A FR8413661A FR2551562A1 FR 2551562 A1 FR2551562 A1 FR 2551562A1 FR 8413661 A FR8413661 A FR 8413661A FR 8413661 A FR8413661 A FR 8413661A FR 2551562 A1 FR2551562 A1 FR 2551562A1
Authority
FR
France
Prior art keywords
layer
atoms
gas
photoconductive element
element according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8413661A
Other languages
English (en)
French (fr)
Other versions
FR2551562B1 (ref
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP58162726A external-priority patent/JPS6053958A/ja
Priority claimed from JP58163434A external-priority patent/JPS6055351A/ja
Priority claimed from JP58167747A external-priority patent/JPS6059360A/ja
Priority claimed from JP58169925A external-priority patent/JPS6060652A/ja
Priority claimed from JP58191986A external-priority patent/JPS6083954A/ja
Priority claimed from JP58197332A external-priority patent/JPS6088951A/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of FR2551562A1 publication Critical patent/FR2551562A1/fr
Application granted granted Critical
Publication of FR2551562B1 publication Critical patent/FR2551562B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H10F30/15—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors comprising amorphous semiconductors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08221—Silicon-based comprising one or two silicon based layers
    • G03G5/08228—Silicon-based comprising one or two silicon based layers at least one with varying composition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Light Receiving Elements (AREA)
FR8413661A 1983-09-05 1984-09-05 Expired FR2551562B1 (ref)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP58162726A JPS6053958A (ja) 1983-09-05 1983-09-05 電子写真用光導電部材
JP58163434A JPS6055351A (ja) 1983-09-06 1983-09-06 電子写真用光導電部材
JP58167747A JPS6059360A (ja) 1983-09-12 1983-09-12 電子写真用光導電部材
JP58169925A JPS6060652A (ja) 1983-09-14 1983-09-14 電子写真用光導電部材
JP58191986A JPS6083954A (ja) 1983-10-14 1983-10-14 光導電部材
JP58197332A JPS6088951A (ja) 1983-10-21 1983-10-21 光導電部材

Publications (2)

Publication Number Publication Date
FR2551562A1 true FR2551562A1 (ref) 1985-03-08
FR2551562B1 FR2551562B1 (ref) 1987-02-13

Family

ID=27553268

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8413661A Expired FR2551562B1 (ref) 1983-09-05 1984-09-05

Country Status (4)

Country Link
US (1) US4585719A (ref)
DE (1) DE3432645A1 (ref)
FR (1) FR2551562B1 (ref)
GB (1) GB2148022B (ref)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0235966B1 (en) * 1986-02-07 1994-05-04 Canon Kabushiki Kaisha Light receiving member
US4822703A (en) * 1988-04-04 1989-04-18 Xerox Corporation Photoresponsive imaging members with polygermanes
US7754503B2 (en) * 2007-01-22 2010-07-13 Panasonic Corporation Method for producing semiconductor device and semiconductor producing apparatus

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3201081A1 (de) * 1981-01-16 1982-08-26 Canon K.K., Tokyo Photoleitfaehiges element
DE3212184A1 (de) * 1981-04-17 1982-11-11 Kawamura, Takao, Sakai, Osaka Lichtempfindliches element
DE3311463A1 (de) * 1982-03-31 1983-10-13 Takao Sakai Osaka Kawamura Photoempfindliches element

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4423133A (en) * 1981-11-17 1983-12-27 Canon Kabushiki Kaisha Photoconductive member of amorphous silicon
US4460670A (en) * 1981-11-26 1984-07-17 Canon Kabushiki Kaisha Photoconductive member with α-Si and C, N or O and dopant
US4490450A (en) * 1982-03-31 1984-12-25 Canon Kabushiki Kaisha Photoconductive member

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3201081A1 (de) * 1981-01-16 1982-08-26 Canon K.K., Tokyo Photoleitfaehiges element
DE3212184A1 (de) * 1981-04-17 1982-11-11 Kawamura, Takao, Sakai, Osaka Lichtempfindliches element
DE3311463A1 (de) * 1982-03-31 1983-10-13 Takao Sakai Osaka Kawamura Photoempfindliches element

Also Published As

Publication number Publication date
DE3432645A1 (de) 1985-04-04
DE3432645C2 (ref) 1988-12-22
FR2551562B1 (ref) 1987-02-13
US4585719A (en) 1986-04-29
GB2148022B (en) 1986-12-31
GB8422403D0 (en) 1984-10-10
GB2148022A (en) 1985-05-22

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