FR2525028A1 - Procede de fabrication de transistors a effet de champ, en gaas, par implantations ioniques et transistors ainsi obtenus - Google Patents

Procede de fabrication de transistors a effet de champ, en gaas, par implantations ioniques et transistors ainsi obtenus Download PDF

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Publication number
FR2525028A1
FR2525028A1 FR8206290A FR8206290A FR2525028A1 FR 2525028 A1 FR2525028 A1 FR 2525028A1 FR 8206290 A FR8206290 A FR 8206290A FR 8206290 A FR8206290 A FR 8206290A FR 2525028 A1 FR2525028 A1 FR 2525028A1
Authority
FR
France
Prior art keywords
substrate
transistors
field effect
region
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8206290A
Other languages
English (en)
French (fr)
Other versions
FR2525028B1 (enExample
Inventor
Gerard Martin
Sherif Makram-Ebeid
Camille Venger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Chauffage Nouvelles Tech
Original Assignee
Chauffage Nouvelles Tech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chauffage Nouvelles Tech filed Critical Chauffage Nouvelles Tech
Priority to FR8206290A priority Critical patent/FR2525028A1/fr
Priority to US06/480,445 priority patent/US4489480A/en
Priority to EP83200486A priority patent/EP0092266B1/fr
Priority to DE8383200486T priority patent/DE3369425D1/de
Priority to JP58061068A priority patent/JPS58190071A/ja
Publication of FR2525028A1 publication Critical patent/FR2525028A1/fr
Application granted granted Critical
Publication of FR2525028B1 publication Critical patent/FR2525028B1/fr
Granted legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/206—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group III-V semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/854—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/218—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the implantation in a compound semiconductor of both electrically active and inactive species in the same semiconductor region to be doped n-type or p-type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/919—Compensation doping

Landscapes

  • Junction Field-Effect Transistors (AREA)
FR8206290A 1982-04-09 1982-04-09 Procede de fabrication de transistors a effet de champ, en gaas, par implantations ioniques et transistors ainsi obtenus Granted FR2525028A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR8206290A FR2525028A1 (fr) 1982-04-09 1982-04-09 Procede de fabrication de transistors a effet de champ, en gaas, par implantations ioniques et transistors ainsi obtenus
US06/480,445 US4489480A (en) 1982-04-09 1983-03-30 Method of manufacturing field effect transistors of GaAs by ion implantation
EP83200486A EP0092266B1 (fr) 1982-04-09 1983-04-06 Procédé de fabrication de transistors à effet de champ, en GaAs, par implantations ioniques et transistors ainsi obtenus
DE8383200486T DE3369425D1 (en) 1982-04-09 1983-04-06 Process for manufacturing gaas field effect transistors by ion implantation, and transistor made by this process
JP58061068A JPS58190071A (ja) 1982-04-09 1983-04-08 電界効果トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8206290A FR2525028A1 (fr) 1982-04-09 1982-04-09 Procede de fabrication de transistors a effet de champ, en gaas, par implantations ioniques et transistors ainsi obtenus

Publications (2)

Publication Number Publication Date
FR2525028A1 true FR2525028A1 (fr) 1983-10-14
FR2525028B1 FR2525028B1 (enExample) 1984-05-04

Family

ID=9272967

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8206290A Granted FR2525028A1 (fr) 1982-04-09 1982-04-09 Procede de fabrication de transistors a effet de champ, en gaas, par implantations ioniques et transistors ainsi obtenus

Country Status (5)

Country Link
US (1) US4489480A (enExample)
EP (1) EP0092266B1 (enExample)
JP (1) JPS58190071A (enExample)
DE (1) DE3369425D1 (enExample)
FR (1) FR2525028A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4639275A (en) * 1982-04-22 1987-01-27 The Board Of Trustees Of The University Of Illinois Forming disordered layer by controlled diffusion in heterojunction III-V semiconductor
JPS60137070A (ja) * 1983-12-26 1985-07-20 Toshiba Corp 半導体装置の製造方法
US4602965A (en) * 1984-03-13 1986-07-29 Communications Satellite Corporation Method of making FETs in GaAs by dual species implantation of silicon and boron
JPS60251631A (ja) * 1984-05-28 1985-12-12 Semiconductor Res Found 不均一不純物密度分布を有する半導体装置の製造方法
JPH0750692B2 (ja) * 1984-09-06 1995-05-31 日本電気株式会社 ▲ｉｉｉ▼―▲ｖ▼族化合物半導体の熱処理方法
US4662058A (en) * 1984-11-05 1987-05-05 Honeywell Inc. Self-aligned gate process for ICS based on modulation doped (Al,Ga) As/GaAs FETs
US4673446A (en) * 1985-12-12 1987-06-16 The United States Of America As Represented By The Secretary Of The Navy Method of forming thermally stable high resistivity regions in n-type indium phosphide by oxygen implantation
GB2222304A (en) * 1987-07-01 1990-02-28 Plessey Co Plc Gallium arsenide device
JPH07118484B2 (ja) * 1987-10-09 1995-12-18 沖電気工業株式会社 ショットキーゲート電界効果トランジスタの製造方法
JPH01220822A (ja) * 1988-02-29 1989-09-04 Mitsubishi Electric Corp 化合物半導体装置の製造方法
US5436498A (en) * 1994-02-04 1995-07-25 Motorola, Inc. Gettering of impurities by forming a stable chemical compound
US5672522A (en) * 1996-03-05 1997-09-30 Trw Inc. Method for making selective subcollector heterojunction bipolar transistors
US6635559B2 (en) 2001-09-06 2003-10-21 Spire Corporation Formation of insulating aluminum oxide in semiconductor substrates
CA2478797C (en) * 2002-03-15 2010-05-04 Matsushita Electric Works, Ltd. Reforming apparatus and operation method thereof
DE10217610B4 (de) * 2002-04-19 2005-11-03 Infineon Technologies Ag Metall-Halbleiter-Kontakt, Halbleiterbauelement, integrierte Schaltungsanordnung und Verfahren
US7858501B2 (en) 2007-08-23 2010-12-28 Infineon Technologies Austria Ag Semiconductor wafer for semiconductor components and production method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2358751A1 (fr) * 1976-07-15 1978-02-10 Siemens Ag Composant a semi-conducteurs comportant un contact schottky comportant une resistance serie de faible valeur et procede pour sa fabrication

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4033788A (en) * 1973-12-10 1977-07-05 Hughes Aircraft Company Ion implanted gallium arsenide semiconductor devices fabricated in semi-insulating gallium arsenide substrates
US4366493A (en) * 1980-06-20 1982-12-28 International Business Machines Corporation Semiconductor ballistic transport device
US4357180A (en) * 1981-01-26 1982-11-02 The United States Of America As Represented By The Secretary Of The Navy Annealing of ion-implanted GaAs and InP semiconductors
EP0057605B1 (en) * 1981-01-29 1986-10-08 Sumitomo Electric Industries Limited A schottky-barrier gate field effect transistor and a process for the production of the same
US4389768A (en) * 1981-04-17 1983-06-28 International Business Machines Corporation Self-aligned process for fabricating gallium arsenide metal-semiconductor field effect transistors
US4396437A (en) * 1981-05-04 1983-08-02 Hughes Aircraft Company Selective encapsulation, controlled atmosphere annealing for III-V semiconductor device fabrication
US4385938A (en) * 1981-09-10 1983-05-31 The United States Of America As Represented By The Secretary Of The Air Force Dual species ion implantation into GaAs
FR2513439B1 (fr) * 1981-09-18 1985-09-13 Labo Electronique Physique Procede de traitement de substrat de gaas, par implantation ionique, et substrats ainsi obtenus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2358751A1 (fr) * 1976-07-15 1978-02-10 Siemens Ag Composant a semi-conducteurs comportant un contact schottky comportant une resistance serie de faible valeur et procede pour sa fabrication

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
ELECTRONICS LETTERS, volume 15, no. 9, 26 avril 1979, HITCHIN (GB) H. BRUCH et al. "VPE GaAs MESFET structure using oxygen injection during buffer layer growth", pages 245-247 *
ELECTRONICS LETTERS, volume 17, no. 23, novembre 1981 (LONDRES, GB) M. BERTH et al. "Selective carrier removal using oxygen implantation in GaAs", pages 873-874 *
PROCEEDINGS 7TH BIENNIAL CORNELL ELECTRICAL ENGINEERING CONFERENCE, 14-16 août 1979 (NEW YORK, US) H.B. KIM et al. "Encapsulant and controlled atmosphere annealing of ion implanted GaAs", pages 121-130 *
PROCEEDINGS 8TH BIENNIAL CORNELL ELECTRICAL ENGINEERING CONFERENCE, 11-13 août 1981 (NEW YORK, US) DENG XIAN-CAN et al. "A 12 GHz planar low-noise GaAs MESFET", pages 233-241 *
PROCEEDINGS OF THE 8TH CONFERENCE ON SOLID STATE DEVICES, 1976, JAPANESE JOURNAL OF APPLIED PHYSICS, volume 16, no. 16-1, 1977, supplément 16-1 (TOKYO, JP) T. NOZAKI et al. "Sub-micron gate GaAs MESFET's with ion-implanted channels", pages 111-114 *

Also Published As

Publication number Publication date
DE3369425D1 (en) 1987-02-26
EP0092266A1 (fr) 1983-10-26
JPH0259624B2 (enExample) 1990-12-13
EP0092266B1 (fr) 1987-01-21
US4489480A (en) 1984-12-25
FR2525028B1 (enExample) 1984-05-04
JPS58190071A (ja) 1983-11-05

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