DE3369425D1 - Process for manufacturing gaas field effect transistors by ion implantation, and transistor made by this process - Google Patents

Process for manufacturing gaas field effect transistors by ion implantation, and transistor made by this process

Info

Publication number
DE3369425D1
DE3369425D1 DE8383200486T DE3369425T DE3369425D1 DE 3369425 D1 DE3369425 D1 DE 3369425D1 DE 8383200486 T DE8383200486 T DE 8383200486T DE 3369425 T DE3369425 T DE 3369425T DE 3369425 D1 DE3369425 D1 DE 3369425D1
Authority
DE
Germany
Prior art keywords
field effect
ion implantation
effect transistors
transistor made
gaas field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383200486T
Other languages
English (en)
Inventor
Gerard Marie Martin
Sherif Makram-Ebeid
Camille Venger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Electronique & Physique
Laboratoires dElectronique Philips SAS
Koninklijke Philips NV
Original Assignee
Electronique & Physique
Laboratoires dElectronique et de Physique Appliquee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Electronique & Physique, Laboratoires dElectronique et de Physique Appliquee, Philips Gloeilampenfabrieken NV filed Critical Electronique & Physique
Application granted granted Critical
Publication of DE3369425D1 publication Critical patent/DE3369425D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • H01L21/2656—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds characterised by the implantation of both electrically active and inactive species in the same semiconductor region to be doped
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/919—Compensation doping

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Ceramic Engineering (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Junction Field-Effect Transistors (AREA)
DE8383200486T 1982-04-09 1983-04-06 Process for manufacturing gaas field effect transistors by ion implantation, and transistor made by this process Expired DE3369425D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8206290A FR2525028A1 (fr) 1982-04-09 1982-04-09 Procede de fabrication de transistors a effet de champ, en gaas, par implantations ioniques et transistors ainsi obtenus

Publications (1)

Publication Number Publication Date
DE3369425D1 true DE3369425D1 (en) 1987-02-26

Family

ID=9272967

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383200486T Expired DE3369425D1 (en) 1982-04-09 1983-04-06 Process for manufacturing gaas field effect transistors by ion implantation, and transistor made by this process

Country Status (5)

Country Link
US (1) US4489480A (de)
EP (1) EP0092266B1 (de)
JP (1) JPS58190071A (de)
DE (1) DE3369425D1 (de)
FR (1) FR2525028A1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4639275A (en) * 1982-04-22 1987-01-27 The Board Of Trustees Of The University Of Illinois Forming disordered layer by controlled diffusion in heterojunction III-V semiconductor
JPS60137070A (ja) * 1983-12-26 1985-07-20 Toshiba Corp 半導体装置の製造方法
US4602965A (en) * 1984-03-13 1986-07-29 Communications Satellite Corporation Method of making FETs in GaAs by dual species implantation of silicon and boron
JPS60251631A (ja) * 1984-05-28 1985-12-12 Semiconductor Res Found 不均一不純物密度分布を有する半導体装置の製造方法
JPH0750692B2 (ja) * 1984-09-06 1995-05-31 日本電気株式会社 ▲ｉｉｉ▼―▲ｖ▼族化合物半導体の熱処理方法
US4662058A (en) * 1984-11-05 1987-05-05 Honeywell Inc. Self-aligned gate process for ICS based on modulation doped (Al,Ga) As/GaAs FETs
US4673446A (en) * 1985-12-12 1987-06-16 The United States Of America As Represented By The Secretary Of The Navy Method of forming thermally stable high resistivity regions in n-type indium phosphide by oxygen implantation
GB2222304A (en) * 1987-07-01 1990-02-28 Plessey Co Plc Gallium arsenide device
JPH07118484B2 (ja) * 1987-10-09 1995-12-18 沖電気工業株式会社 ショットキーゲート電界効果トランジスタの製造方法
JPH01220822A (ja) * 1988-02-29 1989-09-04 Mitsubishi Electric Corp 化合物半導体装置の製造方法
US5436498A (en) * 1994-02-04 1995-07-25 Motorola, Inc. Gettering of impurities by forming a stable chemical compound
US5672522A (en) * 1996-03-05 1997-09-30 Trw Inc. Method for making selective subcollector heterojunction bipolar transistors
US6635559B2 (en) 2001-09-06 2003-10-21 Spire Corporation Formation of insulating aluminum oxide in semiconductor substrates
JP4135640B2 (ja) * 2002-03-15 2008-08-20 松下電工株式会社 改質装置及びその運転方法
DE10217610B4 (de) * 2002-04-19 2005-11-03 Infineon Technologies Ag Metall-Halbleiter-Kontakt, Halbleiterbauelement, integrierte Schaltungsanordnung und Verfahren
US7858501B2 (en) 2007-08-23 2010-12-28 Infineon Technologies Austria Ag Semiconductor wafer for semiconductor components and production method

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4033788A (en) * 1973-12-10 1977-07-05 Hughes Aircraft Company Ion implanted gallium arsenide semiconductor devices fabricated in semi-insulating gallium arsenide substrates
DE2631873C2 (de) * 1976-07-15 1986-07-31 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Herstellung eines Halbleiterbauelements mit einem Schottky-Kontakt auf einem zu einem anderen Bereich justierten Gatebereich und mit kleinem Serienwiderstand
US4366493A (en) * 1980-06-20 1982-12-28 International Business Machines Corporation Semiconductor ballistic transport device
US4357180A (en) * 1981-01-26 1982-11-02 The United States Of America As Represented By The Secretary Of The Navy Annealing of ion-implanted GaAs and InP semiconductors
EP0057605B1 (de) * 1981-01-29 1986-10-08 Sumitomo Electric Industries Limited Schottky-Gate-Feldeffekttransistor und Verfahren zu seiner Herstellung
US4389768A (en) * 1981-04-17 1983-06-28 International Business Machines Corporation Self-aligned process for fabricating gallium arsenide metal-semiconductor field effect transistors
US4396437A (en) * 1981-05-04 1983-08-02 Hughes Aircraft Company Selective encapsulation, controlled atmosphere annealing for III-V semiconductor device fabrication
US4385938A (en) * 1981-09-10 1983-05-31 The United States Of America As Represented By The Secretary Of The Air Force Dual species ion implantation into GaAs
FR2513439B1 (fr) * 1981-09-18 1985-09-13 Labo Electronique Physique Procede de traitement de substrat de gaas, par implantation ionique, et substrats ainsi obtenus

Also Published As

Publication number Publication date
FR2525028A1 (fr) 1983-10-14
JPH0259624B2 (de) 1990-12-13
EP0092266B1 (de) 1987-01-21
FR2525028B1 (de) 1984-05-04
JPS58190071A (ja) 1983-11-05
EP0092266A1 (de) 1983-10-26
US4489480A (en) 1984-12-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee