FR2523113A1 - Procede de regeneration des chlorosilanes et de l'hydrogene non entres en reaction lors de l'obtention de silicium semi-conducteur polycristallin; chlorosilanes et hydrogene regeneres par ledit procede - Google Patents
Procede de regeneration des chlorosilanes et de l'hydrogene non entres en reaction lors de l'obtention de silicium semi-conducteur polycristallin; chlorosilanes et hydrogene regeneres par ledit procede Download PDFInfo
- Publication number
- FR2523113A1 FR2523113A1 FR8204020A FR8204020A FR2523113A1 FR 2523113 A1 FR2523113 A1 FR 2523113A1 FR 8204020 A FR8204020 A FR 8204020A FR 8204020 A FR8204020 A FR 8204020A FR 2523113 A1 FR2523113 A1 FR 2523113A1
- Authority
- FR
- France
- Prior art keywords
- chlorosilanes
- hydrogen
- condensation
- silicon
- hydrogen chloride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000001257 hydrogen Substances 0.000 title claims description 50
- 229910052739 hydrogen Inorganic materials 0.000 title claims description 50
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 title claims description 41
- 229910052710 silicon Inorganic materials 0.000 title claims description 34
- 239000010703 silicon Substances 0.000 title claims description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title description 32
- 239000007789 gas Substances 0.000 title description 11
- 238000001816 cooling Methods 0.000 title description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 title 1
- 125000001309 chloro group Chemical group Cl* 0.000 title 1
- 229910000077 silane Inorganic materials 0.000 title 1
- 239000005046 Chlorosilane Substances 0.000 claims abstract description 100
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical class Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 claims abstract description 100
- 238000000034 method Methods 0.000 claims abstract description 52
- 239000004065 semiconductor Substances 0.000 claims abstract description 36
- 238000009833 condensation Methods 0.000 claims description 42
- 230000005494 condensation Effects 0.000 claims description 42
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 37
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 36
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims description 36
- 239000000203 mixture Substances 0.000 claims description 33
- 238000004519 manufacturing process Methods 0.000 claims description 23
- 238000007710 freezing Methods 0.000 claims description 19
- 230000008014 freezing Effects 0.000 claims description 19
- 230000008929 regeneration Effects 0.000 claims description 12
- 238000011069 regeneration method Methods 0.000 claims description 12
- 238000004821 distillation Methods 0.000 claims description 11
- 150000002431 hydrogen Chemical class 0.000 claims description 10
- 239000007788 liquid Substances 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract 4
- 239000012535 impurity Substances 0.000 description 11
- 238000000746 purification Methods 0.000 description 11
- 238000009835 boiling Methods 0.000 description 5
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 150000001805 chlorine compounds Chemical class 0.000 description 4
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000001179 sorption measurement Methods 0.000 description 4
- 229910003902 SiCl 4 Inorganic materials 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 239000007792 gaseous phase Substances 0.000 description 3
- 230000036512 infertility Effects 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 230000001172 regenerating effect Effects 0.000 description 3
- 238000003303 reheating Methods 0.000 description 3
- 239000007858 starting material Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 2
- 239000003463 adsorbent Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 229920000548 poly(silane) polymer Polymers 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 2
- 239000005052 trichlorosilane Substances 0.000 description 2
- 241000006479 Cyme Species 0.000 description 1
- 101000812677 Homo sapiens Nucleotide pyrophosphatase Proteins 0.000 description 1
- 102100039306 Nucleotide pyrophosphatase Human genes 0.000 description 1
- 229910003910 SiCl4 Inorganic materials 0.000 description 1
- 229910003818 SiH2Cl2 Inorganic materials 0.000 description 1
- 229910003822 SiHCl3 Inorganic materials 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- XMIJDTGORVPYLW-UHFFFAOYSA-N [SiH2] Chemical compound [SiH2] XMIJDTGORVPYLW-UHFFFAOYSA-N 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 239000008246 gaseous mixture Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000003134 recirculating effect Effects 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8204020A FR2523113A1 (fr) | 1982-03-10 | 1982-03-10 | Procede de regeneration des chlorosilanes et de l'hydrogene non entres en reaction lors de l'obtention de silicium semi-conducteur polycristallin; chlorosilanes et hydrogene regeneres par ledit procede |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8204020A FR2523113A1 (fr) | 1982-03-10 | 1982-03-10 | Procede de regeneration des chlorosilanes et de l'hydrogene non entres en reaction lors de l'obtention de silicium semi-conducteur polycristallin; chlorosilanes et hydrogene regeneres par ledit procede |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2523113A1 true FR2523113A1 (fr) | 1983-09-16 |
| FR2523113B1 FR2523113B1 (enrdf_load_stackoverflow) | 1985-03-08 |
Family
ID=9271828
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8204020A Granted FR2523113A1 (fr) | 1982-03-10 | 1982-03-10 | Procede de regeneration des chlorosilanes et de l'hydrogene non entres en reaction lors de l'obtention de silicium semi-conducteur polycristallin; chlorosilanes et hydrogene regeneres par ledit procede |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2523113A1 (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0811413A3 (en) * | 1996-05-23 | 1999-04-14 | Ebara Corporation | Evacuation system |
| WO2002100776A1 (en) * | 2001-06-08 | 2002-12-19 | Hemlock Semiconductor Corporation | Process for preparation of polycrystalline silicon |
| US7033561B2 (en) | 2001-06-08 | 2006-04-25 | Dow Corning Corporation | Process for preparation of polycrystalline silicon |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DD48582A (enrdf_load_stackoverflow) * | ||||
| FR1267519A (fr) * | 1959-09-28 | 1961-07-21 | Siemens Ag | Procédé et dispositif pour récupérer les matières de départ non consommées lors de la préparation du silicium extra pur par réduction de silanes au moyen d'hydrogène |
| FR1514885A (fr) * | 1966-04-04 | 1968-02-23 | Motorola Inc | Procédé et appareillage perfectionnés pour préparer du silicium |
| DE2918060A1 (de) * | 1979-05-04 | 1980-11-13 | Siemens Ag | Verfahren zur rueckgewinnung von bei der abscheidung von silicium durch thermische zersetzung anfallenden restgasen |
| DE2918078A1 (de) * | 1979-05-04 | 1980-11-13 | Siemens Ag | Verfahren zur rueckgewinnung von bei der abscheidung von silicium durch thermische zersetzung anfallenden restgasen |
-
1982
- 1982-03-10 FR FR8204020A patent/FR2523113A1/fr active Granted
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DD48582A (enrdf_load_stackoverflow) * | ||||
| FR1267519A (fr) * | 1959-09-28 | 1961-07-21 | Siemens Ag | Procédé et dispositif pour récupérer les matières de départ non consommées lors de la préparation du silicium extra pur par réduction de silanes au moyen d'hydrogène |
| FR1514885A (fr) * | 1966-04-04 | 1968-02-23 | Motorola Inc | Procédé et appareillage perfectionnés pour préparer du silicium |
| DE2918060A1 (de) * | 1979-05-04 | 1980-11-13 | Siemens Ag | Verfahren zur rueckgewinnung von bei der abscheidung von silicium durch thermische zersetzung anfallenden restgasen |
| DE2918078A1 (de) * | 1979-05-04 | 1980-11-13 | Siemens Ag | Verfahren zur rueckgewinnung von bei der abscheidung von silicium durch thermische zersetzung anfallenden restgasen |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0811413A3 (en) * | 1996-05-23 | 1999-04-14 | Ebara Corporation | Evacuation system |
| US6332925B1 (en) | 1996-05-23 | 2001-12-25 | Ebara Corporation | Evacuation system |
| EP1719551A3 (en) * | 1996-05-23 | 2007-10-31 | Ebara Corporation | Evacuation system |
| WO2002100776A1 (en) * | 2001-06-08 | 2002-12-19 | Hemlock Semiconductor Corporation | Process for preparation of polycrystalline silicon |
| US7033561B2 (en) | 2001-06-08 | 2006-04-25 | Dow Corning Corporation | Process for preparation of polycrystalline silicon |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2523113B1 (enrdf_load_stackoverflow) | 1985-03-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |