FR2517121A1 - Procede pour former une couche d'un oxyde naturel sur un substrat et dispositif semi-conducteur ainsi forme - Google Patents

Procede pour former une couche d'un oxyde naturel sur un substrat et dispositif semi-conducteur ainsi forme Download PDF

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Publication number
FR2517121A1
FR2517121A1 FR8219564A FR8219564A FR2517121A1 FR 2517121 A1 FR2517121 A1 FR 2517121A1 FR 8219564 A FR8219564 A FR 8219564A FR 8219564 A FR8219564 A FR 8219564A FR 2517121 A1 FR2517121 A1 FR 2517121A1
Authority
FR
France
Prior art keywords
oxygen
substrate
natural oxide
radiation
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
FR8219564A
Other languages
English (en)
French (fr)
Inventor
John W Peters
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of FR2517121A1 publication Critical patent/FR2517121A1/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6312—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group III-V semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6338—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition the reactions being activated by other means than plasma or thermal, e.g. photo-CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2

Landscapes

  • Formation Of Insulating Films (AREA)
FR8219564A 1981-11-23 1982-11-23 Procede pour former une couche d'un oxyde naturel sur un substrat et dispositif semi-conducteur ainsi forme Pending FR2517121A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US32378081A 1981-11-23 1981-11-23

Publications (1)

Publication Number Publication Date
FR2517121A1 true FR2517121A1 (fr) 1983-05-27

Family

ID=23260697

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8219564A Pending FR2517121A1 (fr) 1981-11-23 1982-11-23 Procede pour former une couche d'un oxyde naturel sur un substrat et dispositif semi-conducteur ainsi forme

Country Status (5)

Country Link
JP (1) JPS58155725A (enExample)
DE (1) DE3242921A1 (enExample)
FR (1) FR2517121A1 (enExample)
GB (1) GB2111037B (enExample)
NL (1) NL8204475A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0126803A3 (en) * 1982-12-09 1986-03-12 International Business Machines Corporation Method for photochemical conversion of silicon monoxide to silicon dioxide
WO1986005320A1 (en) * 1985-02-28 1986-09-12 Sony Corporation Method and system for fabricating insulating layer on semiconductor substrate surface
EP0232515A1 (de) * 1985-12-20 1987-08-19 Licentia Patent-Verwaltungs-GmbH Strukturierter Halbleiterkörper
FR2635915A1 (fr) * 1988-08-30 1990-03-02 Loualiche Slimane Procede de fabrication d'une couche mince d'oxyde par voie seche sur un materiau iii-v, couche d'oxyde obtenue par ce procede et application a une diode schottky

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5178682A (en) * 1988-06-21 1993-01-12 Mitsubishi Denki Kabushiki Kaisha Method for forming a thin layer on a semiconductor substrate and apparatus therefor
JPH01319944A (ja) * 1988-06-21 1989-12-26 Mitsubishi Electric Corp 半導体基板表面に薄膜を形成する方法およびその装置
WO2005113134A1 (ja) * 2004-05-21 2005-12-01 Mitsubishi Gas Chemical Company, Inc. 物質の酸化方法およびその酸化装置
JP6501486B2 (ja) * 2014-10-27 2019-04-17 学校法人東海大学 滅菌装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3718503A (en) * 1971-07-14 1973-02-27 Us Army Method of forming a diffusion mask barrier on a silicon substrate
FR2159344A1 (enExample) * 1971-11-10 1973-06-22 Semikron Gleichrichterbau
EP0030798A1 (en) * 1979-12-17 1981-06-24 Hughes Aircraft Company Low temperature process for depositing oxide layers by photochemical vapor deposition

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3718503A (en) * 1971-07-14 1973-02-27 Us Army Method of forming a diffusion mask barrier on a silicon substrate
FR2159344A1 (enExample) * 1971-11-10 1973-06-22 Semikron Gleichrichterbau
EP0030798A1 (en) * 1979-12-17 1981-06-24 Hughes Aircraft Company Low temperature process for depositing oxide layers by photochemical vapor deposition

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
APPLIED PHYSICS LETTERS, vol. 38, no. 12, juin 1981, pages 1005-1007, American Institute of Physics, New York, US; Y.S. LIU et al.: "Rapid oxidation via adsorption of oxygen in laser-induced amorphous silicon" *
JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 20, no. 10, octobre 1981, pages L-726-L-728, Tokyo, JP; M. MATSUURA et al.: "Laser oxidation of GaAs" *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0126803A3 (en) * 1982-12-09 1986-03-12 International Business Machines Corporation Method for photochemical conversion of silicon monoxide to silicon dioxide
WO1986005320A1 (en) * 1985-02-28 1986-09-12 Sony Corporation Method and system for fabricating insulating layer on semiconductor substrate surface
EP0232515A1 (de) * 1985-12-20 1987-08-19 Licentia Patent-Verwaltungs-GmbH Strukturierter Halbleiterkörper
FR2635915A1 (fr) * 1988-08-30 1990-03-02 Loualiche Slimane Procede de fabrication d'une couche mince d'oxyde par voie seche sur un materiau iii-v, couche d'oxyde obtenue par ce procede et application a une diode schottky

Also Published As

Publication number Publication date
GB2111037B (en) 1984-10-17
JPS58155725A (ja) 1983-09-16
DE3242921A1 (de) 1983-08-04
JPH0436456B2 (enExample) 1992-06-16
NL8204475A (nl) 1983-06-16
GB2111037A (en) 1983-06-29

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