GB2111037B - Preparing substrates for semi-conductors - Google Patents

Preparing substrates for semi-conductors

Info

Publication number
GB2111037B
GB2111037B GB08229832A GB8229832A GB2111037B GB 2111037 B GB2111037 B GB 2111037B GB 08229832 A GB08229832 A GB 08229832A GB 8229832 A GB8229832 A GB 8229832A GB 2111037 B GB2111037 B GB 2111037B
Authority
GB
United Kingdom
Prior art keywords
conductors
semi
preparing substrates
substrates
preparing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08229832A
Other languages
English (en)
Other versions
GB2111037A (en
Inventor
John W Peters
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of GB2111037A publication Critical patent/GB2111037A/en
Application granted granted Critical
Publication of GB2111037B publication Critical patent/GB2111037B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6312—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group III-V semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6338—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition the reactions being activated by other means than plasma or thermal, e.g. photo-CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
GB08229832A 1981-11-23 1982-10-19 Preparing substrates for semi-conductors Expired GB2111037B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US32378081A 1981-11-23 1981-11-23

Publications (2)

Publication Number Publication Date
GB2111037A GB2111037A (en) 1983-06-29
GB2111037B true GB2111037B (en) 1984-10-17

Family

ID=23260697

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08229832A Expired GB2111037B (en) 1981-11-23 1982-10-19 Preparing substrates for semi-conductors

Country Status (5)

Country Link
JP (1) JPS58155725A (enExample)
DE (1) DE3242921A1 (enExample)
FR (1) FR2517121A1 (enExample)
GB (1) GB2111037B (enExample)
NL (1) NL8204475A (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59111333A (ja) * 1982-12-09 1984-06-27 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション ＳｉＯ領域をＳｉＯ↓２領域に変換してＳｉＯ↓２領を形成する方法
DE3680623D1 (de) * 1985-02-28 1991-09-05 Sony Corp Verfahren zur herstellung isolierender oxid-schichten auf einem halbleiterkoerper.
DE3545242A1 (de) * 1985-12-20 1987-06-25 Licentia Gmbh Strukturierter halbleiterkoerper
US5178682A (en) * 1988-06-21 1993-01-12 Mitsubishi Denki Kabushiki Kaisha Method for forming a thin layer on a semiconductor substrate and apparatus therefor
JPH01319944A (ja) * 1988-06-21 1989-12-26 Mitsubishi Electric Corp 半導体基板表面に薄膜を形成する方法およびその装置
FR2635915B1 (fr) * 1988-08-30 1992-04-30 Loualiche Slimane Procede de fabrication d'une couche mince d'oxyde par voie seche sur un materiau iii-v, couche d'oxyde obtenue par ce procede et application a une diode schottky
WO2005113134A1 (ja) * 2004-05-21 2005-12-01 Mitsubishi Gas Chemical Company, Inc. 物質の酸化方法およびその酸化装置
JP6501486B2 (ja) * 2014-10-27 2019-04-17 学校法人東海大学 滅菌装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3718503A (en) * 1971-07-14 1973-02-27 Us Army Method of forming a diffusion mask barrier on a silicon substrate
DE2155849C3 (de) * 1971-11-10 1979-07-26 Semikron Gesellschaft Fuer Gleichrichterbau Und Elektronik Mbh, 8500 Nuernberg Verfahren zur Herstellung eines stabilisierenden und/oder isolierenden Überzuges auf Halbleiteroberflächen
EP0030798B1 (en) * 1979-12-17 1983-12-28 Hughes Aircraft Company Low temperature process for depositing oxide layers by photochemical vapor deposition

Also Published As

Publication number Publication date
FR2517121A1 (fr) 1983-05-27
JPS58155725A (ja) 1983-09-16
DE3242921A1 (de) 1983-08-04
JPH0436456B2 (enExample) 1992-06-16
NL8204475A (nl) 1983-06-16
GB2111037A (en) 1983-06-29

Similar Documents

Publication Publication Date Title
GB2111336B (en) Substrate biassing
PT74504A (en) Process for preparing imidazodiazepines
YU98382A (en) Process for preparing cepheme compounds
GB8414914D0 (en) Substrate structures
DE3260638D1 (en) Process for preparing 4-methyl-1-pentene
JPS57198643A (en) Semiconductor substrate
GB2111037B (en) Preparing substrates for semi-conductors
DE3268413D1 (en) Process for preparing chlorotrifluoromethylbenzene
DE3261535D1 (en) Process for preparing aryldiazosulphonates
PT75680A (en) Process for preparing 5-phenyl-2s-pentanol
DE3261580D1 (en) Process for preparing 4-haloazetidin-2-ones
GB2108491B (en) Process for preparing 3-exo-methylenecepham derivatives
YU105982A (en) Process for foam-flotation
ZA823608B (en) A process for the preparation of a granular substrate
PL239428A1 (en) Process for preparing pyrbuterol
JPS57126158A (en) Substrate unit
PT75315A (en) Process for preparing novel 2-cyanosteroids
GB2112777B (en) Process for preparing mononitrochlorobenzene
DE3263884D1 (en) Process for preparing alpha-omega-bis-flurosulfato-perfluoroalkanes
DE3262826D1 (en) Process for preparing m-alkylhydroxybenzene
DE3267381D1 (en) Process for preparing beta-chloroalanine
JPS57139915A (en) Condenser for substrate
GB2101120B (en) 7a-methoxycephem compounds and process for preparing the same
DE3260363D1 (en) Process for preparing 3-alkylaminophenols
DE3260454D1 (en) Process for preparing vinyl-phosphonic-acid diesters

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee