FR2517120A1 - Procede de fabrication d'un composant semiconducteur par diffusion avec implantation ionique prealable et composant obtenu - Google Patents

Procede de fabrication d'un composant semiconducteur par diffusion avec implantation ionique prealable et composant obtenu Download PDF

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Publication number
FR2517120A1
FR2517120A1 FR8122167A FR8122167A FR2517120A1 FR 2517120 A1 FR2517120 A1 FR 2517120A1 FR 8122167 A FR8122167 A FR 8122167A FR 8122167 A FR8122167 A FR 8122167A FR 2517120 A1 FR2517120 A1 FR 2517120A1
Authority
FR
France
Prior art keywords
component
impurity
diffusion
ion implantation
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8122167A
Other languages
English (en)
French (fr)
Other versions
FR2517120B1 (https=
Inventor
Michel Salvi
Pierre-Noel Favennec
Marcel Gauneau
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to FR8122167A priority Critical patent/FR2517120A1/fr
Priority to CA000416107A priority patent/CA1206628A/en
Priority to US06/444,429 priority patent/US4545824A/en
Priority to DE8282402141T priority patent/DE3269712D1/de
Priority to EP82402141A priority patent/EP0080937B1/fr
Publication of FR2517120A1 publication Critical patent/FR2517120A1/fr
Application granted granted Critical
Publication of FR2517120B1 publication Critical patent/FR2517120B1/fr
Granted legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/854—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/206—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group III-V semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/174—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being Group III-V material

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  • Junction Field-Effect Transistors (AREA)
FR8122167A 1981-11-26 1981-11-26 Procede de fabrication d'un composant semiconducteur par diffusion avec implantation ionique prealable et composant obtenu Granted FR2517120A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR8122167A FR2517120A1 (fr) 1981-11-26 1981-11-26 Procede de fabrication d'un composant semiconducteur par diffusion avec implantation ionique prealable et composant obtenu
CA000416107A CA1206628A (en) 1981-11-26 1982-11-22 Process for producing a semiconductor component
US06/444,429 US4545824A (en) 1981-11-26 1982-11-24 Process for producing a GaAs or InP semiconductor by pre-implantation followed by transition metal diffusion
DE8282402141T DE3269712D1 (en) 1981-11-26 1982-11-24 Process for manufacturing a semiconductor device using a diffusion step involving a previous implantation step, and device made by that process
EP82402141A EP0080937B1 (fr) 1981-11-26 1982-11-24 Procédé de fabrication d'un composant semi-conducteur par diffusion avec implantation ionique préalable et composant obtenu

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8122167A FR2517120A1 (fr) 1981-11-26 1981-11-26 Procede de fabrication d'un composant semiconducteur par diffusion avec implantation ionique prealable et composant obtenu

Publications (2)

Publication Number Publication Date
FR2517120A1 true FR2517120A1 (fr) 1983-05-27
FR2517120B1 FR2517120B1 (https=) 1985-05-17

Family

ID=9264399

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8122167A Granted FR2517120A1 (fr) 1981-11-26 1981-11-26 Procede de fabrication d'un composant semiconducteur par diffusion avec implantation ionique prealable et composant obtenu

Country Status (5)

Country Link
US (1) US4545824A (https=)
EP (1) EP0080937B1 (https=)
CA (1) CA1206628A (https=)
DE (1) DE3269712D1 (https=)
FR (1) FR2517120A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60220975A (ja) * 1984-04-18 1985-11-05 Toshiba Corp ＧａＡｓ電界効果トランジスタ及びその製造方法
US4632713A (en) * 1985-07-31 1986-12-30 Texas Instruments Incorporated Process of making Schottky barrier devices formed by diffusion before contacting
US4673446A (en) * 1985-12-12 1987-06-16 The United States Of America As Represented By The Secretary Of The Navy Method of forming thermally stable high resistivity regions in n-type indium phosphide by oxygen implantation
US4738934A (en) * 1986-05-16 1988-04-19 American Telephone And Telegraph Company, At&T Bell Laboratories Method of making indium phosphide devices
US4818721A (en) * 1987-07-29 1989-04-04 American Telephone And Telegraph Company, At&T Bell Laboratories Ion implantation into In-based group III-V compound semiconductors
JPH01220822A (ja) * 1988-02-29 1989-09-04 Mitsubishi Electric Corp 化合物半導体装置の製造方法
US5037766A (en) * 1988-12-06 1991-08-06 Industrial Technology Research Institute Method of fabricating a thin film polysilicon thin film transistor or resistor
JPH0383332A (ja) * 1989-08-28 1991-04-09 Sharp Corp 炭化珪素半導体装置の製造方法
US5374589A (en) * 1994-04-05 1994-12-20 The United States Of America As Represented By The Secretary Of The Navy Process of making a bistable photoconductive component
US6335562B1 (en) 1999-12-09 2002-01-01 The United States Of America As Represented By The Secretary Of The Navy Method and design for the suppression of single event upset failures in digital circuits made from GaAs and related compounds

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3502518A (en) * 1966-09-20 1970-03-24 Int Standard Electric Corp Method for producing gallium arsenide devices

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4017887A (en) * 1972-07-25 1977-04-12 The United States Of America As Represented By The Secretary Of The Air Force Method and means for passivation and isolation in semiconductor devices
JPS5459074A (en) * 1977-10-20 1979-05-12 Toshiba Corp Semiconductor device
US4252580A (en) * 1977-10-27 1981-02-24 Messick Louis J Method of producing a microwave InP/SiO2 insulated gate field effect transistor
US4372032A (en) * 1979-09-04 1983-02-08 The United States Of America As Represented By The Secretary Of The Navy Normally off InP field effect transistor making process
US4383869A (en) * 1981-06-15 1983-05-17 Rca Corporation Method for enhancing electron mobility in GaAs
FR2513439B1 (fr) * 1981-09-18 1985-09-13 Labo Electronique Physique Procede de traitement de substrat de gaas, par implantation ionique, et substrats ainsi obtenus
US4391651A (en) * 1981-10-15 1983-07-05 The United States Of America As Represented By The Secretary Of The Navy Method of forming a hyperabrupt interface in a GaAs substrate

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3502518A (en) * 1966-09-20 1970-03-24 Int Standard Electric Corp Method for producing gallium arsenide devices

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/81 *

Also Published As

Publication number Publication date
US4545824A (en) 1985-10-08
DE3269712D1 (en) 1986-04-10
EP0080937A1 (fr) 1983-06-08
FR2517120B1 (https=) 1985-05-17
EP0080937B1 (fr) 1986-03-05
CA1206628A (en) 1986-06-24

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