FR2516656A1 - Dispositif de mesure de la concentration d'une espece chimique ionique et application de ce dispositif a la mesure du ph d'une solution - Google Patents
Dispositif de mesure de la concentration d'une espece chimique ionique et application de ce dispositif a la mesure du ph d'une solution Download PDFInfo
- Publication number
- FR2516656A1 FR2516656A1 FR8121592A FR8121592A FR2516656A1 FR 2516656 A1 FR2516656 A1 FR 2516656A1 FR 8121592 A FR8121592 A FR 8121592A FR 8121592 A FR8121592 A FR 8121592A FR 2516656 A1 FR2516656 A1 FR 2516656A1
- Authority
- FR
- France
- Prior art keywords
- ionosensitive
- mos transistor
- channel
- measuring
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013626 chemical specie Substances 0.000 title claims abstract description 13
- 238000005259 measurement Methods 0.000 claims abstract description 11
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- 239000012774 insulation material Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 230000005669 field effect Effects 0.000 description 14
- 150000002500 ions Chemical class 0.000 description 9
- 239000000377 silicon dioxide Substances 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- 230000010287 polarization Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 241000894007 species Species 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- 241000209140 Triticum Species 0.000 description 1
- 235000021307 Triticum Nutrition 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000012885 constant function Methods 0.000 description 1
- 230000009699 differential effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4148—Integrated circuits therefor, e.g. fabricated by CMOS processing
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Electrochemistry (AREA)
- Molecular Biology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8121592A FR2516656A1 (fr) | 1981-11-18 | 1981-11-18 | Dispositif de mesure de la concentration d'une espece chimique ionique et application de ce dispositif a la mesure du ph d'une solution |
DE8282402088T DE3269480D1 (en) | 1981-11-18 | 1982-11-16 | Device for measuring an ion concentration, and its application to ph determination |
EP19820402088 EP0080402B1 (fr) | 1981-11-18 | 1982-11-16 | Dispositif de mesure de la concentration d'une espèce chimique ionique et application de ce dispositif à la mesure du pH d'une solution |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8121592A FR2516656A1 (fr) | 1981-11-18 | 1981-11-18 | Dispositif de mesure de la concentration d'une espece chimique ionique et application de ce dispositif a la mesure du ph d'une solution |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2516656A1 true FR2516656A1 (fr) | 1983-05-20 |
FR2516656B1 FR2516656B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1983-12-16 |
Family
ID=9264123
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8121592A Granted FR2516656A1 (fr) | 1981-11-18 | 1981-11-18 | Dispositif de mesure de la concentration d'une espece chimique ionique et application de ce dispositif a la mesure du ph d'une solution |
Country Status (3)
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1994006005A1 (de) * | 1992-08-28 | 1994-03-17 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Anordnung zur messung von ionenkonzentrationen in lösungen |
US20240310321A1 (en) * | 2021-07-01 | 2024-09-19 | The Research Foundation For The State University Of New York | Differential pmos isfet-based ph sensor |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB8428138D0 (en) * | 1984-11-07 | 1984-12-12 | Sibbald A | Semiconductor devices |
US4879517A (en) * | 1988-07-25 | 1989-11-07 | General Signal Corporation | Temperature compensation for potentiometrically operated ISFETS |
US7794584B2 (en) * | 2005-10-12 | 2010-09-14 | The Research Foundation Of State University Of New York | pH-change sensor and method |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2438271A1 (fr) * | 1978-10-03 | 1980-04-30 | Anvar | Dispositif de detection de gaz |
DE2947050A1 (de) * | 1979-11-22 | 1981-05-27 | Karoly Dr. 4600 Dortmund Dobos | Anordnung zum nachweis von ionen, atomen und molekuelen in gasen oder loesungen |
FR2478880A1 (fr) * | 1980-03-19 | 1981-09-25 | Olympus Optical Co | Capteur ionique et son procede de fabrication |
-
1981
- 1981-11-18 FR FR8121592A patent/FR2516656A1/fr active Granted
-
1982
- 1982-11-16 DE DE8282402088T patent/DE3269480D1/de not_active Expired
- 1982-11-16 EP EP19820402088 patent/EP0080402B1/fr not_active Expired
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2438271A1 (fr) * | 1978-10-03 | 1980-04-30 | Anvar | Dispositif de detection de gaz |
DE2947050A1 (de) * | 1979-11-22 | 1981-05-27 | Karoly Dr. 4600 Dortmund Dobos | Anordnung zum nachweis von ionen, atomen und molekuelen in gasen oder loesungen |
FR2478880A1 (fr) * | 1980-03-19 | 1981-09-25 | Olympus Optical Co | Capteur ionique et son procede de fabrication |
GB2072418A (en) * | 1980-03-19 | 1981-09-30 | Olympus Optical Co | Ion sensor and method of manufacturing the same |
Non-Patent Citations (1)
Title |
---|
EXBK/78 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1994006005A1 (de) * | 1992-08-28 | 1994-03-17 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Anordnung zur messung von ionenkonzentrationen in lösungen |
US5602467A (en) * | 1992-08-28 | 1997-02-11 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. | Circuit for measuring ion concentrations in solutions |
US20240310321A1 (en) * | 2021-07-01 | 2024-09-19 | The Research Foundation For The State University Of New York | Differential pmos isfet-based ph sensor |
Also Published As
Publication number | Publication date |
---|---|
EP0080402B1 (fr) | 1986-02-26 |
FR2516656B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1983-12-16 |
DE3269480D1 (en) | 1986-04-03 |
EP0080402A1 (fr) | 1983-06-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |