FR2509638A1 - Moule et procede pour le moulage de lingots de silicium destines a etre utilises comme materiau pour la realisation de cellules solaires - Google Patents
Moule et procede pour le moulage de lingots de silicium destines a etre utilises comme materiau pour la realisation de cellules solaires Download PDFInfo
- Publication number
- FR2509638A1 FR2509638A1 FR8212588A FR8212588A FR2509638A1 FR 2509638 A1 FR2509638 A1 FR 2509638A1 FR 8212588 A FR8212588 A FR 8212588A FR 8212588 A FR8212588 A FR 8212588A FR 2509638 A1 FR2509638 A1 FR 2509638A1
- Authority
- FR
- France
- Prior art keywords
- silicon
- mold
- container
- envelope
- mold according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 42
- 239000010703 silicon Substances 0.000 title claims abstract description 42
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 41
- 238000000034 method Methods 0.000 title claims abstract description 15
- 239000000463 material Substances 0.000 title claims description 16
- 238000000465 moulding Methods 0.000 title claims description 9
- 238000004519 manufacturing process Methods 0.000 claims abstract description 9
- 238000001816 cooling Methods 0.000 claims abstract description 8
- 239000011810 insulating material Substances 0.000 claims abstract description 7
- 239000004576 sand Substances 0.000 claims abstract description 5
- 239000000835 fiber Substances 0.000 claims description 13
- 239000000919 ceramic Substances 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- 229910002804 graphite Inorganic materials 0.000 claims description 8
- 239000010439 graphite Substances 0.000 claims description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 230000004927 fusion Effects 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 3
- 229910010293 ceramic material Inorganic materials 0.000 claims description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 12
- 239000013078 crystal Substances 0.000 abstract description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 6
- 239000000377 silicon dioxide Substances 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 238000005266 casting Methods 0.000 abstract 2
- 239000007779 soft material Substances 0.000 abstract 1
- 210000004027 cell Anatomy 0.000 description 9
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000007711 solidification Methods 0.000 description 3
- 230000008023 solidification Effects 0.000 description 3
- 239000006004 Quartz sand Substances 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 229920004482 WACKER® Polymers 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000003471 anti-radiation Effects 0.000 description 1
- 210000003850 cellular structure Anatomy 0.000 description 1
- 210000001787 dendrite Anatomy 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000000877 morphologic effect Effects 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT23007/81A IT1137729B (it) | 1981-07-20 | 1981-07-20 | Stampo e procedimento per la fusione di lingotti di silicio atti ad essere utilizzati come materiale per celle solari |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2509638A1 true FR2509638A1 (fr) | 1983-01-21 |
| FR2509638B3 FR2509638B3 (enExample) | 1984-08-10 |
Family
ID=11202800
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8212588A Granted FR2509638A1 (fr) | 1981-07-20 | 1982-07-19 | Moule et procede pour le moulage de lingots de silicium destines a etre utilises comme materiau pour la realisation de cellules solaires |
Country Status (4)
| Country | Link |
|---|---|
| BE (1) | BE893894A (enExample) |
| DE (1) | DE3226440A1 (enExample) |
| FR (1) | FR2509638A1 (enExample) |
| IT (1) | IT1137729B (enExample) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0887442A1 (en) * | 1997-06-23 | 1998-12-30 | Sharp Kabushiki Kaisha | Process and apparatus for producing polycrystalline semiconductor ingot |
| FR2853913A1 (fr) * | 2003-04-17 | 2004-10-22 | Apollon Solar | Creuset pour un dispositif de fabrication d'un bloc de materiau cristallin et procede de fabrication |
| WO2006128575A1 (de) * | 2005-05-31 | 2006-12-07 | Saint-Gobain Industriekeramik Rödental GmbH | Mehrteiliger, dünnwandiger tiegel mit einlage aus quarzglasgewebe oder quarzglasfilz zum abkühlen von si-schmelzen |
| US20120119407A1 (en) * | 2010-11-17 | 2012-05-17 | 6N Silicon Inc. | Apparatus and method for directional solidification of silicon |
| EP2589687A1 (en) * | 2011-11-04 | 2013-05-08 | Vesuvius France (S.A.) | Crucible and method for the production of a (near ) monocrystalline semiconductor ingot |
-
1981
- 1981-07-20 IT IT23007/81A patent/IT1137729B/it active
-
1982
- 1982-07-15 DE DE19823226440 patent/DE3226440A1/de not_active Withdrawn
- 1982-07-19 FR FR8212588A patent/FR2509638A1/fr active Granted
- 1982-07-20 BE BE0/208639A patent/BE893894A/fr not_active IP Right Cessation
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0887442A1 (en) * | 1997-06-23 | 1998-12-30 | Sharp Kabushiki Kaisha | Process and apparatus for producing polycrystalline semiconductor ingot |
| US6136091A (en) * | 1997-06-23 | 2000-10-24 | Sharp Kabushiki Kaisha | Process and apparatus for producing polycrystalline semiconductor ingot |
| FR2853913A1 (fr) * | 2003-04-17 | 2004-10-22 | Apollon Solar | Creuset pour un dispositif de fabrication d'un bloc de materiau cristallin et procede de fabrication |
| WO2004094704A3 (fr) * | 2003-04-17 | 2004-12-16 | Apollon Solar | Creuset pour un dispositif de fabrication d’un bloc de materiau cristallin et procede de fabrication |
| US7442255B2 (en) | 2003-04-17 | 2008-10-28 | Apollon Solar | Crucible for a device for producing a block of crystalline material and method for producing same |
| RU2344206C2 (ru) * | 2003-04-17 | 2009-01-20 | Аполлон Солар | Тигель для устройства для получения блока кристаллического вещества и способ его получения |
| WO2006128575A1 (de) * | 2005-05-31 | 2006-12-07 | Saint-Gobain Industriekeramik Rödental GmbH | Mehrteiliger, dünnwandiger tiegel mit einlage aus quarzglasgewebe oder quarzglasfilz zum abkühlen von si-schmelzen |
| WO2012065271A1 (en) * | 2010-11-17 | 2012-05-24 | Calisolar Canada Inc. | Apparatus and method for directional solidification of silicon |
| US20120119407A1 (en) * | 2010-11-17 | 2012-05-17 | 6N Silicon Inc. | Apparatus and method for directional solidification of silicon |
| CN103261493A (zh) * | 2010-11-17 | 2013-08-21 | 思利科材料有限公司 | 用于硅的定向固化的装置和方法 |
| US8562740B2 (en) * | 2010-11-17 | 2013-10-22 | Silicor Materials Inc. | Apparatus for directional solidification of silicon including a refractory material |
| JP2014500216A (ja) * | 2010-11-17 | 2014-01-09 | シリコー マテリアルズ インコーポレイテッド | シリコンの方向性凝固のための機器および方法 |
| US20140042295A1 (en) * | 2010-11-17 | 2014-02-13 | Silicor Materials Inc. | Apparatus for directional solidification of silicon including a refractory material |
| EP2640874A4 (en) * | 2010-11-17 | 2015-04-08 | Silicor Materials Inc | DEVICE AND METHOD FOR THE FINISHED FIXING OF SILICON |
| EP2589687A1 (en) * | 2011-11-04 | 2013-05-08 | Vesuvius France (S.A.) | Crucible and method for the production of a (near ) monocrystalline semiconductor ingot |
| WO2013064626A1 (en) | 2011-11-04 | 2013-05-10 | Vesuvius France Sa | Crucible and method for the production of a (near) monocrystalline semiconductor ingot |
| EP2773797B1 (en) | 2011-11-04 | 2015-08-05 | Vesuvius France S.A. | Crucible and method for the production of a (near) monocrystalline semiconductor ingot |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2509638B3 (enExample) | 1984-08-10 |
| IT8123007A0 (it) | 1981-07-20 |
| BE893894A (fr) | 1982-11-16 |
| DE3226440A1 (de) | 1983-02-03 |
| IT1137729B (it) | 1986-09-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| FR2918675A1 (fr) | Dispositif de fabrication d'un bloc de materiau cristallin avec modulation de la conductivite thermique. | |
| CN101522960B (zh) | 用于生产晶体硅基板的方法和设备 | |
| EP1613795B1 (fr) | CREUSET POUR UN DISPOSITIF DE FABRICATION D’UN BLOC DE MATERIAU CRISTALLIN ET PROCEDE DE FABRICATION | |
| FR2480272A1 (fr) | Procede pour fabriquer des creusets en verre de silice et dispositif pour la mise en oeuvre de ce procede | |
| JPS60261130A (ja) | 半導体の箔を製造する方法及びその装置 | |
| FR2511708A1 (fr) | Procede et appareil pour regler l'atmosphere entourant une zone de croissance cristalline | |
| FR2602503A1 (fr) | Procede et appareillage pour la purification du silicium | |
| FR2662071A1 (fr) | Procede de moulage par coulee de metaux dentaires. | |
| FR2817560A1 (fr) | Creuset et procede pour realiser la croissance de silicium polycristallin a l'aide dudit creuset | |
| FR2509638A1 (fr) | Moule et procede pour le moulage de lingots de silicium destines a etre utilises comme materiau pour la realisation de cellules solaires | |
| EP0141999B1 (fr) | Procédé et dispositif pour élaborer un lingot d'un matériau semi-conducteur polycristallin | |
| EP1948849A2 (fr) | Cuve d'electrolyse avec echangeur thermique | |
| Schoenholz et al. | Growth of cadmium telluride crystals by an improved travelling heater method | |
| CN101477949A (zh) | 硅片和其制造方法及装置 | |
| JPS5953209B2 (ja) | 多結晶シリコンインゴットの鋳造法 | |
| JPH1192284A (ja) | 一方向凝固多結晶組織を有するシリコンインゴットの製造方法 | |
| EP0565415B1 (fr) | Procédé de fabrication d'un lingot en oxyde supraconducteur à haute température critique | |
| JP2004284892A (ja) | 多結晶シリコンの製造方法 | |
| US6497762B1 (en) | Method of fabricating crystal thin plate under micro-gravity environment | |
| JP4273659B2 (ja) | 結晶シリコン製造装置 | |
| JP4611507B2 (ja) | 結晶シリコン製造装置 | |
| JP4077712B2 (ja) | シリコンの鋳造方法 | |
| JP4412919B2 (ja) | 鋳造装置 | |
| JP4273664B2 (ja) | 結晶シリコン製造装置 | |
| JPS5939897B2 (ja) | 多結晶シリコン半導体の製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |