DE3226440A1 - Giessform und verfahren fuer den guss von siliziumbarren, die als material fuer solarzellen verwendbar sind - Google Patents
Giessform und verfahren fuer den guss von siliziumbarren, die als material fuer solarzellen verwendbar sindInfo
- Publication number
- DE3226440A1 DE3226440A1 DE19823226440 DE3226440A DE3226440A1 DE 3226440 A1 DE3226440 A1 DE 3226440A1 DE 19823226440 DE19823226440 DE 19823226440 DE 3226440 A DE3226440 A DE 3226440A DE 3226440 A1 DE3226440 A1 DE 3226440A1
- Authority
- DE
- Germany
- Prior art keywords
- container
- silicon
- silica
- casting
- casting mold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 35
- 229910052710 silicon Inorganic materials 0.000 title claims description 35
- 239000010703 silicon Substances 0.000 title claims description 35
- 238000005266 casting Methods 0.000 title claims description 20
- 239000000463 material Substances 0.000 title claims description 16
- 238000000034 method Methods 0.000 title claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 24
- 239000000835 fiber Substances 0.000 claims description 15
- 239000000919 ceramic Substances 0.000 claims description 11
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- 238000001816 cooling Methods 0.000 claims description 8
- 229910002804 graphite Inorganic materials 0.000 claims description 8
- 239000010439 graphite Substances 0.000 claims description 8
- 238000002844 melting Methods 0.000 claims description 7
- 230000008018 melting Effects 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 239000011810 insulating material Substances 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 4
- 239000004576 sand Substances 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 2
- 239000013078 crystal Substances 0.000 description 11
- 210000004027 cell Anatomy 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000007711 solidification Methods 0.000 description 3
- 230000008023 solidification Effects 0.000 description 3
- 239000006004 Quartz sand Substances 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 241000283925 Spermophilus Species 0.000 description 1
- 229920004482 WACKER® Polymers 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 210000001787 dendrite Anatomy 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000000877 morphologic effect Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 229910021422 solar-grade silicon Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT23007/81A IT1137729B (it) | 1981-07-20 | 1981-07-20 | Stampo e procedimento per la fusione di lingotti di silicio atti ad essere utilizzati come materiale per celle solari |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE3226440A1 true DE3226440A1 (de) | 1983-02-03 |
Family
ID=11202800
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19823226440 Withdrawn DE3226440A1 (de) | 1981-07-20 | 1982-07-15 | Giessform und verfahren fuer den guss von siliziumbarren, die als material fuer solarzellen verwendbar sind |
Country Status (4)
| Country | Link |
|---|---|
| BE (1) | BE893894A (enExample) |
| DE (1) | DE3226440A1 (enExample) |
| FR (1) | FR2509638A1 (enExample) |
| IT (1) | IT1137729B (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3520957B2 (ja) * | 1997-06-23 | 2004-04-19 | シャープ株式会社 | 多結晶半導体インゴットの製造方法および装置 |
| FR2853913B1 (fr) | 2003-04-17 | 2006-09-29 | Apollon Solar | Creuset pour un dispositif de fabrication d'un bloc de materiau cristallin et procede de fabrication |
| DE102005024957A1 (de) * | 2005-05-31 | 2006-12-07 | Saint-Gobain Industriekeramik Rödental GmbH | Mehrteiliger, dünnwandiger Tiegel mit Einlage aus Quarzglasgewebe oder Quarzglasfilz zum Abkühlen von Si-Schmelzen |
| US8562740B2 (en) * | 2010-11-17 | 2013-10-22 | Silicor Materials Inc. | Apparatus for directional solidification of silicon including a refractory material |
| EP2589687A1 (en) | 2011-11-04 | 2013-05-08 | Vesuvius France (S.A.) | Crucible and method for the production of a (near ) monocrystalline semiconductor ingot |
-
1981
- 1981-07-20 IT IT23007/81A patent/IT1137729B/it active
-
1982
- 1982-07-15 DE DE19823226440 patent/DE3226440A1/de not_active Withdrawn
- 1982-07-19 FR FR8212588A patent/FR2509638A1/fr active Granted
- 1982-07-20 BE BE0/208639A patent/BE893894A/fr not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| FR2509638A1 (fr) | 1983-01-21 |
| FR2509638B3 (enExample) | 1984-08-10 |
| IT8123007A0 (it) | 1981-07-20 |
| BE893894A (fr) | 1982-11-16 |
| IT1137729B (it) | 1986-09-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8139 | Disposal/non-payment of the annual fee |