BE893894A - Moule et procede pour le moulage de lingots de silicium destine a etre utilises comme materiau pour la realisation de cellules solaires - Google Patents

Moule et procede pour le moulage de lingots de silicium destine a etre utilises comme materiau pour la realisation de cellules solaires

Info

Publication number
BE893894A
BE893894A BE0/208639A BE208639A BE893894A BE 893894 A BE893894 A BE 893894A BE 0/208639 A BE0/208639 A BE 0/208639A BE 208639 A BE208639 A BE 208639A BE 893894 A BE893894 A BE 893894A
Authority
BE
Belgium
Prior art keywords
mold
solar cells
silicon ingots
making solar
molding silicon
Prior art date
Application number
BE0/208639A
Other languages
English (en)
French (fr)
Original Assignee
Heliosil S P A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Heliosil S P A filed Critical Heliosil S P A
Publication of BE893894A publication Critical patent/BE893894A/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
BE0/208639A 1981-07-20 1982-07-20 Moule et procede pour le moulage de lingots de silicium destine a etre utilises comme materiau pour la realisation de cellules solaires BE893894A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT23007/81A IT1137729B (it) 1981-07-20 1981-07-20 Stampo e procedimento per la fusione di lingotti di silicio atti ad essere utilizzati come materiale per celle solari

Publications (1)

Publication Number Publication Date
BE893894A true BE893894A (fr) 1982-11-16

Family

ID=11202800

Family Applications (1)

Application Number Title Priority Date Filing Date
BE0/208639A BE893894A (fr) 1981-07-20 1982-07-20 Moule et procede pour le moulage de lingots de silicium destine a etre utilises comme materiau pour la realisation de cellules solaires

Country Status (4)

Country Link
BE (1) BE893894A (enExample)
DE (1) DE3226440A1 (enExample)
FR (1) FR2509638A1 (enExample)
IT (1) IT1137729B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3520957B2 (ja) * 1997-06-23 2004-04-19 シャープ株式会社 多結晶半導体インゴットの製造方法および装置
FR2853913B1 (fr) 2003-04-17 2006-09-29 Apollon Solar Creuset pour un dispositif de fabrication d'un bloc de materiau cristallin et procede de fabrication
DE102005024957A1 (de) * 2005-05-31 2006-12-07 Saint-Gobain Industriekeramik Rödental GmbH Mehrteiliger, dünnwandiger Tiegel mit Einlage aus Quarzglasgewebe oder Quarzglasfilz zum Abkühlen von Si-Schmelzen
US8562740B2 (en) * 2010-11-17 2013-10-22 Silicor Materials Inc. Apparatus for directional solidification of silicon including a refractory material
EP2589687A1 (en) 2011-11-04 2013-05-08 Vesuvius France (S.A.) Crucible and method for the production of a (near ) monocrystalline semiconductor ingot

Also Published As

Publication number Publication date
FR2509638A1 (fr) 1983-01-21
FR2509638B3 (enExample) 1984-08-10
IT8123007A0 (it) 1981-07-20
DE3226440A1 (de) 1983-02-03
IT1137729B (it) 1986-09-10

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Legal Events

Date Code Title Description
RE Patent lapsed

Owner name: HELIOSIL S.P.A.

Effective date: 19870731