FR2504731A1 - Circuit integre incorporant une diode zener a stabilite amelioree - Google Patents
Circuit integre incorporant une diode zener a stabilite amelioree Download PDFInfo
- Publication number
- FR2504731A1 FR2504731A1 FR8108338A FR8108338A FR2504731A1 FR 2504731 A1 FR2504731 A1 FR 2504731A1 FR 8108338 A FR8108338 A FR 8108338A FR 8108338 A FR8108338 A FR 8108338A FR 2504731 A1 FR2504731 A1 FR 2504731A1
- Authority
- FR
- France
- Prior art keywords
- zener diode
- integrated circuit
- junctions
- silicon
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/20—Breakdown diodes, e.g. avalanche diodes
- H10D8/25—Zener diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8108338A FR2504731A1 (fr) | 1981-04-27 | 1981-04-27 | Circuit integre incorporant une diode zener a stabilite amelioree |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8108338A FR2504731A1 (fr) | 1981-04-27 | 1981-04-27 | Circuit integre incorporant une diode zener a stabilite amelioree |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2504731A1 true FR2504731A1 (fr) | 1982-10-29 |
| FR2504731B1 FR2504731B1 (OSRAM) | 1984-10-12 |
Family
ID=9257809
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8108338A Granted FR2504731A1 (fr) | 1981-04-27 | 1981-04-27 | Circuit integre incorporant une diode zener a stabilite amelioree |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2504731A1 (OSRAM) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1372069A (fr) * | 1962-08-23 | 1964-09-11 | Motorola Inc | Procédé pour la fabrication des diodes redresseuses et des diodes zener |
| US4079402A (en) * | 1973-07-09 | 1978-03-14 | National Semiconductor Corporation | Zener diode incorporating an ion implanted layer establishing the breakdown point below the surface |
-
1981
- 1981-04-27 FR FR8108338A patent/FR2504731A1/fr active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1372069A (fr) * | 1962-08-23 | 1964-09-11 | Motorola Inc | Procédé pour la fabrication des diodes redresseuses et des diodes zener |
| US4079402A (en) * | 1973-07-09 | 1978-03-14 | National Semiconductor Corporation | Zener diode incorporating an ion implanted layer establishing the breakdown point below the surface |
Non-Patent Citations (1)
| Title |
|---|
| EXBK/74 * |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2504731B1 (OSRAM) | 1984-10-12 |
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