FR2500768A1 - Creuset demontable, procede de fabrication, et cellules solaires au silicium ainsi obtenues - Google Patents
Creuset demontable, procede de fabrication, et cellules solaires au silicium ainsi obtenues Download PDFInfo
- Publication number
- FR2500768A1 FR2500768A1 FR8103940A FR8103940A FR2500768A1 FR 2500768 A1 FR2500768 A1 FR 2500768A1 FR 8103940 A FR8103940 A FR 8103940A FR 8103940 A FR8103940 A FR 8103940A FR 2500768 A1 FR2500768 A1 FR 2500768A1
- Authority
- FR
- France
- Prior art keywords
- crucible
- elements
- mfr
- pyrocarbon
- dismantlable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 18
- 229910052710 silicon Inorganic materials 0.000 title claims description 18
- 239000010703 silicon Substances 0.000 title claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims 1
- 230000006378 damage Effects 0.000 abstract description 2
- 238000011084 recovery Methods 0.000 abstract 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 5
- 239000012535 impurity Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005411 Van der Waals force Methods 0.000 description 1
- QAWIHIJWNYOLBE-OKKQSCSOSA-N acivicin Chemical compound OC(=O)[C@@H](N)[C@@H]1CC(Cl)=NO1 QAWIHIJWNYOLBE-OKKQSCSOSA-N 0.000 description 1
- 150000007824 aliphatic compounds Chemical class 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000001698 pyrogenic effect Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8103940A FR2500768A1 (fr) | 1981-02-27 | 1981-02-27 | Creuset demontable, procede de fabrication, et cellules solaires au silicium ainsi obtenues |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8103940A FR2500768A1 (fr) | 1981-02-27 | 1981-02-27 | Creuset demontable, procede de fabrication, et cellules solaires au silicium ainsi obtenues |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2500768A1 true FR2500768A1 (fr) | 1982-09-03 |
| FR2500768B1 FR2500768B1 (enrdf_load_stackoverflow) | 1984-05-25 |
Family
ID=9255691
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8103940A Granted FR2500768A1 (fr) | 1981-02-27 | 1981-02-27 | Creuset demontable, procede de fabrication, et cellules solaires au silicium ainsi obtenues |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2500768A1 (enrdf_load_stackoverflow) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0131586A4 (en) * | 1982-12-27 | 1988-03-22 | Stanford Res Inst Int | PROCESS AND DEVICE FOR OBTAINING SILICON FROM FLUOROSILICIC ACID. |
| DE3820714A1 (de) * | 1988-06-18 | 1989-12-21 | Sigri Gmbh | Tiegel fuer schmelzfluessiges silicium |
| EP0529194A1 (de) * | 1991-08-22 | 1993-03-03 | W.C. Heraeus GmbH | Verfahren zur Herstellung eines Körpers aus einem warmrissempfindlichen Werkstoff und Giessform |
| FR2757182A1 (fr) * | 1996-12-17 | 1998-06-19 | Saint Gobain Norton Ind Cerami | Procede et dispositif pour la croissance de cristal |
| EP0887442A1 (en) * | 1997-06-23 | 1998-12-30 | Sharp Kabushiki Kaisha | Process and apparatus for producing polycrystalline semiconductor ingot |
| WO2007148987A1 (en) * | 2006-06-23 | 2007-12-27 | Rec Scanwafer As | Method and crucible for direct solidification of semiconductor grade multi-crystalline silicon ingots |
| EP1717201A4 (en) * | 2004-01-29 | 2008-11-26 | Kyocera Corp | FORM, PREPARATION METHOD AND METHOD FOR PRODUCING POLYCRYSTALLINE SILICONE SUBSTRATE WITH THE FORM |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1301121A (fr) * | 1961-08-29 | 1962-08-10 | Schunk & Ebe Gmbh | Récipients pour la fabrication ou le traitement de semi-conducteurs |
| FR1343740A (fr) * | 1962-10-12 | 1963-11-22 | Electronique & Physique | Procédé de fabrication de lames de silicium et photodiodes obtenues à partir de ces lames |
| US3139653A (en) * | 1959-08-06 | 1964-07-07 | Theodore H Orem | Apparatus for the growth of preferentially oriented single crystals of metals |
| FR2344455A1 (fr) * | 1976-03-17 | 1977-10-14 | Metals Research Ltd | Recipient presentant une aire de contact reduite entre les parois et le liquide contenu |
-
1981
- 1981-02-27 FR FR8103940A patent/FR2500768A1/fr active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3139653A (en) * | 1959-08-06 | 1964-07-07 | Theodore H Orem | Apparatus for the growth of preferentially oriented single crystals of metals |
| FR1301121A (fr) * | 1961-08-29 | 1962-08-10 | Schunk & Ebe Gmbh | Récipients pour la fabrication ou le traitement de semi-conducteurs |
| FR1343740A (fr) * | 1962-10-12 | 1963-11-22 | Electronique & Physique | Procédé de fabrication de lames de silicium et photodiodes obtenues à partir de ces lames |
| FR2344455A1 (fr) * | 1976-03-17 | 1977-10-14 | Metals Research Ltd | Recipient presentant une aire de contact reduite entre les parois et le liquide contenu |
Non-Patent Citations (1)
| Title |
|---|
| EXRV/63 * |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0131586A4 (en) * | 1982-12-27 | 1988-03-22 | Stanford Res Inst Int | PROCESS AND DEVICE FOR OBTAINING SILICON FROM FLUOROSILICIC ACID. |
| EP0424981A1 (en) * | 1982-12-27 | 1991-05-02 | Sri International | Parallelepiped shaped crucible for single or quasi-single crystal silicon ingots |
| DE3820714A1 (de) * | 1988-06-18 | 1989-12-21 | Sigri Gmbh | Tiegel fuer schmelzfluessiges silicium |
| EP0529194A1 (de) * | 1991-08-22 | 1993-03-03 | W.C. Heraeus GmbH | Verfahren zur Herstellung eines Körpers aus einem warmrissempfindlichen Werkstoff und Giessform |
| FR2757182A1 (fr) * | 1996-12-17 | 1998-06-19 | Saint Gobain Norton Ind Cerami | Procede et dispositif pour la croissance de cristal |
| EP0887442A1 (en) * | 1997-06-23 | 1998-12-30 | Sharp Kabushiki Kaisha | Process and apparatus for producing polycrystalline semiconductor ingot |
| US6136091A (en) * | 1997-06-23 | 2000-10-24 | Sharp Kabushiki Kaisha | Process and apparatus for producing polycrystalline semiconductor ingot |
| EP1717201A4 (en) * | 2004-01-29 | 2008-11-26 | Kyocera Corp | FORM, PREPARATION METHOD AND METHOD FOR PRODUCING POLYCRYSTALLINE SILICONE SUBSTRATE WITH THE FORM |
| US8221111B2 (en) | 2004-01-29 | 2012-07-17 | Kyocera Corporation | Mold, method of forming the same, and method of producing polycrystalline silicon substrate using the mold |
| WO2007148987A1 (en) * | 2006-06-23 | 2007-12-27 | Rec Scanwafer As | Method and crucible for direct solidification of semiconductor grade multi-crystalline silicon ingots |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2500768B1 (enrdf_load_stackoverflow) | 1984-05-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP3004431B1 (fr) | Procede de fabrication d'un lingot de silicium dote de joints de grains symetriques | |
| EP3198061B1 (fr) | Creuset pour la solidification directionnelle de silicium multi-cristallin ou quasi-monocristallin par reprise sur germe. | |
| EP0801155A1 (fr) | Dispositif et procédé pour la formation de carbure de silicium (SIC) monocristallin sur un germe | |
| FR2500768A1 (fr) | Creuset demontable, procede de fabrication, et cellules solaires au silicium ainsi obtenues | |
| EP2014802A1 (fr) | Procédé d'élaboration de plaquettes en matériau semi-conducteur par moulage et cristillisation dirigée | |
| FR2786208A1 (fr) | Procede de croissance cristalline sur substrat et reacteur pour sa mise en oeuvre | |
| WO2006090034A1 (fr) | Procede de realisation d'un substrat demontable | |
| FR2979638A1 (fr) | Dispositif de fabrication de materiau cristallin a partir d'un creuset a resistance thermique non uniforme | |
| FR2724487A1 (fr) | Structure composite avec une couche semi-conductrice disposee sur une couche de diamant et/ou une couche semblable a du diamant et procede pour sa fabrication | |
| RU2460167C1 (ru) | Способ получения самоподдерживающейся кристаллизованной кремниевой тонкой пленки | |
| EP1206591A2 (fr) | Porte-creuset pour le tirage de monocristaux | |
| US20150361577A1 (en) | Method of casting ingot and containing device of ingot casting furnace for containing materials of ingot | |
| EP0234984B1 (fr) | Procédé de préparation d'un lingot cristallin de Hg1-xo Cdxo Te | |
| EP0115711A1 (fr) | Procédé de préparation de plaques d'un matériau métallique ou semi-métallique par moulage sans contact direct avec les parois du moule | |
| FR2651249A1 (fr) | Configuration amelioree pour croissance de films pour une meilleurs productivite et une fiabilite de debit de delivrance de 100 % avec des largeurs importantes. | |
| EP3230497B1 (fr) | Pavage de germes utilisés dans un creuset pour la solidification dirigée de silicium comportant des germes désorientés vis à vis du germe adjacent | |
| EP1713958B1 (fr) | Procede et dispositif de fabrication de monocristaux | |
| FR3148671A1 (fr) | Procédé de fabrication d’une pluralité de substrats de carbure de silicium polycristallin | |
| FR3143044A1 (fr) | Structure comprenant une couche d’arseniure de bore de haute conductivite thermique et procede de fabrication | |
| EP2566996B1 (fr) | Ruban de carbone destiné à recevoir une couche d'un matériau semi-conducteur | |
| FR2981194A1 (fr) | Procede de formation d'une couche de silicium cristalise en surface de plusieurs substrats | |
| FR2804131A1 (fr) | Porte-creuset pour le tirage de monocristaux | |
| FR2486925A1 (fr) | Procede de fabrication d'un materiau polycristallin de silicium par bombardement electronique et produits obtenus | |
| FR2880900A1 (fr) | Support allonge sensiblement plan destine a la fabrication d'une bande a base de silicium polycristallin | |
| FR2985524A1 (fr) | Procede de preparation de silicium a l'etat solide |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| CD | Change of name or company name | ||
| ST | Notification of lapse |