FR2344455A1 - Recipient presentant une aire de contact reduite entre les parois et le liquide contenu - Google Patents

Recipient presentant une aire de contact reduite entre les parois et le liquide contenu

Info

Publication number
FR2344455A1
FR2344455A1 FR7708063A FR7708063A FR2344455A1 FR 2344455 A1 FR2344455 A1 FR 2344455A1 FR 7708063 A FR7708063 A FR 7708063A FR 7708063 A FR7708063 A FR 7708063A FR 2344455 A1 FR2344455 A1 FR 2344455A1
Authority
FR
France
Prior art keywords
walls
container
contact
liquid contained
reduced area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7708063A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Metals Research Ltd
Original Assignee
Metals Research Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Metals Research Ltd filed Critical Metals Research Ltd
Publication of FR2344455A1 publication Critical patent/FR2344455A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/24—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using mechanical means, e.g. shaping guides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/66—Crystals of complex geometrical shape, e.g. tubes, cylinders
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y10T117/1044—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die] including means forming a flat shape [e.g., ribbon]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
FR7708063A 1976-03-17 1977-03-17 Recipient presentant une aire de contact reduite entre les parois et le liquide contenu Withdrawn FR2344455A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB10643/76A GB1577413A (en) 1976-03-17 1976-03-17 Growth of crystalline material

Publications (1)

Publication Number Publication Date
FR2344455A1 true FR2344455A1 (fr) 1977-10-14

Family

ID=9971626

Family Applications (2)

Application Number Title Priority Date Filing Date
FR7708062A Pending FR2344332A1 (fr) 1976-03-17 1977-03-17 Procede et dispositif de tirage de monocristaux
FR7708063A Withdrawn FR2344455A1 (fr) 1976-03-17 1977-03-17 Recipient presentant une aire de contact reduite entre les parois et le liquide contenu

Family Applications Before (1)

Application Number Title Priority Date Filing Date
FR7708062A Pending FR2344332A1 (fr) 1976-03-17 1977-03-17 Procede et dispositif de tirage de monocristaux

Country Status (7)

Country Link
US (1) US4268483A (fr)
JP (1) JPS52134884A (fr)
DE (4) DE7708133U1 (fr)
FR (2) FR2344332A1 (fr)
GB (1) GB1577413A (fr)
IL (1) IL51680A0 (fr)
NL (1) NL7702924A (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2500768A1 (fr) * 1981-02-27 1982-09-03 Labo Electronique Physique Creuset demontable, procede de fabrication, et cellules solaires au silicium ainsi obtenues
FR2509637A1 (fr) * 1981-07-17 1983-01-21 Commissariat Energie Atomique Procede de sustentation, de positionnement et de moulage sans contact de masses liquides permettant la solidification en forme de materiaux et application de ce procede a la mise en forme de materiaux en microgravite
FR3019189A1 (fr) * 2014-03-31 2015-10-02 Commissariat Energie Atomique Creuset, procede de fabrication du creuset, et procede de fabrication d'un materiau cristallin au moyen d'un tel creuset

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IN151094B (fr) * 1978-04-24 1983-02-19 Mobil Tyco Solar Energy Corp
DE3310815A1 (de) * 1983-03-24 1984-09-27 Siemens AG, 1000 Berlin und 8000 München Verfahren zum ziehen von kristallinen koerpern aus der schmelze unter verwendung von als ziehduesen wirkenden formgebungsteilen
JPS6090890A (ja) * 1983-10-24 1985-05-22 Mitsubishi Monsanto Chem Co 無機化合物単結晶の成長方法及び単結晶成長用ボ−ト
US5057487A (en) * 1987-10-29 1991-10-15 Texas Instruments Incorporated Crystal growth method for Y-Ba-Cu-O compounds
FR2630459B1 (fr) * 1988-04-20 1994-04-29 Commissariat Energie Atomique Procede et creuset de solidification de materiaux, et application a la cristallogenese de semi-conducteurs
DE3902452A1 (de) * 1989-01-27 1990-08-02 Heliotronic Gmbh Mit einer strukturierten oberflaeche versehene substrate fuer das aufwachsen von erstarrenden schichten aus schmelzen, insbesondere von halbleitermaterial
US5980629A (en) * 1995-06-14 1999-11-09 Memc Electronic Materials, Inc. Methods for improving zero dislocation yield of single crystals
US5976247A (en) * 1995-06-14 1999-11-02 Memc Electronic Materials, Inc. Surface-treated crucibles for improved zero dislocation performance
JP5792813B2 (ja) * 2010-07-30 2015-10-14 エルジー イノテック カンパニー リミテッド 真空熱処理装置用の熱処理容器
AT16098U1 (de) * 2017-05-03 2019-01-15 Plansee Se Glasschmelzkomponente
CN113900418B (zh) * 2021-09-30 2024-05-03 广西埃索凯循环科技有限公司 一种高纯度一水硫酸锌的智能生产系统

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1005736B (de) * 1955-07-14 1957-04-04 Licentia Gmbh Gefaess zur Durchfuehrung einer Schmelz-behandlung an kristallisierbaren Stoffen
NL121446C (fr) * 1958-11-17
US3245674A (en) * 1960-04-25 1966-04-12 Nat Res Corp Crucible coated with reaction product of aluminum and boron nitride coating
CH413800A (de) * 1963-12-14 1966-05-31 Siemens Ag Tiegel zum Ziehen von Kristallen, insbesondere von Halbleiterkristallen aus der Schmelze
US3291574A (en) * 1963-12-23 1966-12-13 Gen Motors Corp Semiconductor crystal growth from a domical projection
CH474032A (de) * 1964-01-13 1969-06-15 Siemens Ag Quarztiegel zum Schmelzen von Silizium
US3265469A (en) * 1964-09-21 1966-08-09 Gen Electric Crystal growing apparatus
US3796548A (en) * 1971-09-13 1974-03-12 Ibm Boat structure in an apparatus for making semiconductor compound single crystals
GB1524521A (en) * 1974-10-16 1978-09-13 Metals Research Ltd Growing of crystals
GB1487587A (en) * 1974-12-04 1977-10-05 Metals Res Ltd Crystal growth

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2500768A1 (fr) * 1981-02-27 1982-09-03 Labo Electronique Physique Creuset demontable, procede de fabrication, et cellules solaires au silicium ainsi obtenues
FR2509637A1 (fr) * 1981-07-17 1983-01-21 Commissariat Energie Atomique Procede de sustentation, de positionnement et de moulage sans contact de masses liquides permettant la solidification en forme de materiaux et application de ce procede a la mise en forme de materiaux en microgravite
EP0070760A1 (fr) * 1981-07-17 1983-01-26 Commissariat A L'energie Atomique Procédé de traitement d'une masse liquide sans contact avec les parois d'un dispositif et application de ce procédé à la mise en forme de matériaux en microgravite
US4546811A (en) * 1981-07-17 1985-10-15 Commissariat A L'energie Atomique Process for the treatment of a liquid mass
FR3019189A1 (fr) * 2014-03-31 2015-10-02 Commissariat Energie Atomique Creuset, procede de fabrication du creuset, et procede de fabrication d'un materiau cristallin au moyen d'un tel creuset

Also Published As

Publication number Publication date
NL7702924A (nl) 1977-09-20
DE2711513A1 (de) 1977-09-29
FR2344332A1 (fr) 1977-10-14
DE7708133U1 (de) 1977-10-20
GB1577413A (en) 1980-10-22
DE7708120U1 (de) 1977-10-27
DE2711484A1 (de) 1977-10-20
JPS52134884A (en) 1977-11-11
US4268483A (en) 1981-05-19
IL51680A0 (en) 1977-05-31

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Legal Events

Date Code Title Description
ST Notification of lapse