FR2344332A1 - Procede et dispositif de tirage de monocristaux - Google Patents
Procede et dispositif de tirage de monocristauxInfo
- Publication number
- FR2344332A1 FR2344332A1 FR7708062A FR7708062A FR2344332A1 FR 2344332 A1 FR2344332 A1 FR 2344332A1 FR 7708062 A FR7708062 A FR 7708062A FR 7708062 A FR7708062 A FR 7708062A FR 2344332 A1 FR2344332 A1 FR 2344332A1
- Authority
- FR
- France
- Prior art keywords
- single crystal
- crystal pulling
- pulling process
- pulling
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/24—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using mechanical means, e.g. shaping guides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/66—Crystals of complex geometrical shape, e.g. tubes, cylinders
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
- Y10T117/1044—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die] including means forming a flat shape [e.g., ribbon]
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB10643/76A GB1577413A (en) | 1976-03-17 | 1976-03-17 | Growth of crystalline material |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2344332A1 true FR2344332A1 (fr) | 1977-10-14 |
Family
ID=9971626
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7708062A Pending FR2344332A1 (fr) | 1976-03-17 | 1977-03-17 | Procede et dispositif de tirage de monocristaux |
FR7708063A Withdrawn FR2344455A1 (fr) | 1976-03-17 | 1977-03-17 | Recipient presentant une aire de contact reduite entre les parois et le liquide contenu |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7708063A Withdrawn FR2344455A1 (fr) | 1976-03-17 | 1977-03-17 | Recipient presentant une aire de contact reduite entre les parois et le liquide contenu |
Country Status (7)
Country | Link |
---|---|
US (1) | US4268483A (fr) |
JP (1) | JPS52134884A (fr) |
DE (4) | DE7708120U1 (fr) |
FR (2) | FR2344332A1 (fr) |
GB (1) | GB1577413A (fr) |
IL (1) | IL51680A0 (fr) |
NL (1) | NL7702924A (fr) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2509637A1 (fr) * | 1981-07-17 | 1983-01-21 | Commissariat Energie Atomique | Procede de sustentation, de positionnement et de moulage sans contact de masses liquides permettant la solidification en forme de materiaux et application de ce procede a la mise en forme de materiaux en microgravite |
EP0338914A1 (fr) * | 1988-04-20 | 1989-10-25 | Commissariat A L'energie Atomique | Procédé et creuset de solidification de matériaux, et application à la cristallogénèse de semi-conducteurs |
EP0381051A1 (fr) * | 1989-01-27 | 1990-08-08 | HELIOTRONIC Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH | Croissance de films, en particulier semi-conducteurs, à partir de la phase fondue à l'aide d'un substrat à surface profilée |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IN151094B (fr) * | 1978-04-24 | 1983-02-19 | Mobil Tyco Solar Energy Corp | |
FR2500768A1 (fr) * | 1981-02-27 | 1982-09-03 | Labo Electronique Physique | Creuset demontable, procede de fabrication, et cellules solaires au silicium ainsi obtenues |
DE3310815A1 (de) * | 1983-03-24 | 1984-09-27 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum ziehen von kristallinen koerpern aus der schmelze unter verwendung von als ziehduesen wirkenden formgebungsteilen |
JPS6090890A (ja) * | 1983-10-24 | 1985-05-22 | Mitsubishi Monsanto Chem Co | 無機化合物単結晶の成長方法及び単結晶成長用ボ−ト |
US5057487A (en) * | 1987-10-29 | 1991-10-15 | Texas Instruments Incorporated | Crystal growth method for Y-Ba-Cu-O compounds |
US5980629A (en) * | 1995-06-14 | 1999-11-09 | Memc Electronic Materials, Inc. | Methods for improving zero dislocation yield of single crystals |
US5976247A (en) * | 1995-06-14 | 1999-11-02 | Memc Electronic Materials, Inc. | Surface-treated crucibles for improved zero dislocation performance |
US10267564B2 (en) * | 2010-07-30 | 2019-04-23 | Lg Innotek Co., Ltd. | Heat treatment container for vacuum heat treatment apparatus |
FR3019189B1 (fr) * | 2014-03-31 | 2018-07-27 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Creuset, procede de fabrication du creuset, et procede de fabrication d'un materiau cristallin au moyen d'un tel creuset |
AT16098U1 (de) * | 2017-05-03 | 2019-01-15 | Plansee Se | Glasschmelzkomponente |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1005736B (de) * | 1955-07-14 | 1957-04-04 | Licentia Gmbh | Gefaess zur Durchfuehrung einer Schmelz-behandlung an kristallisierbaren Stoffen |
US3291574A (en) * | 1963-12-23 | 1966-12-13 | Gen Motors Corp | Semiconductor crystal growth from a domical projection |
DE2546246A1 (de) * | 1974-10-16 | 1976-04-29 | Metals Research Ltd | Verfahren und vorrichtung zum bilden eines kristalls |
DE2554354A1 (de) * | 1974-12-04 | 1976-06-10 | Metals Research Ltd | Verfahren und vorrichtung zum wachsen von kristallen in form eines duennen streifens |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL244873A (fr) * | 1958-11-17 | |||
US3245674A (en) * | 1960-04-25 | 1966-04-12 | Nat Res Corp | Crucible coated with reaction product of aluminum and boron nitride coating |
CH413800A (de) * | 1963-12-14 | 1966-05-31 | Siemens Ag | Tiegel zum Ziehen von Kristallen, insbesondere von Halbleiterkristallen aus der Schmelze |
CH474032A (de) * | 1964-01-13 | 1969-06-15 | Siemens Ag | Quarztiegel zum Schmelzen von Silizium |
US3265469A (en) * | 1964-09-21 | 1966-08-09 | Gen Electric | Crystal growing apparatus |
US3796548A (en) * | 1971-09-13 | 1974-03-12 | Ibm | Boat structure in an apparatus for making semiconductor compound single crystals |
-
1976
- 1976-03-17 GB GB10643/76A patent/GB1577413A/en not_active Expired
-
1977
- 1977-03-14 US US05/777,352 patent/US4268483A/en not_active Expired - Lifetime
- 1977-03-16 DE DE7708120U patent/DE7708120U1/de not_active Expired
- 1977-03-16 DE DE19772711513 patent/DE2711513A1/de active Pending
- 1977-03-16 DE DE7708133U patent/DE7708133U1/de not_active Expired
- 1977-03-16 DE DE19772711484 patent/DE2711484A1/de not_active Withdrawn
- 1977-03-16 IL IL51680A patent/IL51680A0/xx unknown
- 1977-03-17 FR FR7708062A patent/FR2344332A1/fr active Pending
- 1977-03-17 FR FR7708063A patent/FR2344455A1/fr not_active Withdrawn
- 1977-03-17 NL NL7702924A patent/NL7702924A/xx not_active Application Discontinuation
- 1977-03-17 JP JP2870877A patent/JPS52134884A/ja active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1005736B (de) * | 1955-07-14 | 1957-04-04 | Licentia Gmbh | Gefaess zur Durchfuehrung einer Schmelz-behandlung an kristallisierbaren Stoffen |
US3291574A (en) * | 1963-12-23 | 1966-12-13 | Gen Motors Corp | Semiconductor crystal growth from a domical projection |
DE2546246A1 (de) * | 1974-10-16 | 1976-04-29 | Metals Research Ltd | Verfahren und vorrichtung zum bilden eines kristalls |
DE2554354A1 (de) * | 1974-12-04 | 1976-06-10 | Metals Research Ltd | Verfahren und vorrichtung zum wachsen von kristallen in form eines duennen streifens |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2509637A1 (fr) * | 1981-07-17 | 1983-01-21 | Commissariat Energie Atomique | Procede de sustentation, de positionnement et de moulage sans contact de masses liquides permettant la solidification en forme de materiaux et application de ce procede a la mise en forme de materiaux en microgravite |
EP0070760A1 (fr) * | 1981-07-17 | 1983-01-26 | Commissariat A L'energie Atomique | Procédé de traitement d'une masse liquide sans contact avec les parois d'un dispositif et application de ce procédé à la mise en forme de matériaux en microgravite |
US4546811A (en) * | 1981-07-17 | 1985-10-15 | Commissariat A L'energie Atomique | Process for the treatment of a liquid mass |
EP0338914A1 (fr) * | 1988-04-20 | 1989-10-25 | Commissariat A L'energie Atomique | Procédé et creuset de solidification de matériaux, et application à la cristallogénèse de semi-conducteurs |
FR2630459A1 (fr) * | 1988-04-20 | 1989-10-27 | Commissariat Energie Atomique | Procede et creuset de solidification de materiaux, et application a la cristallogenese de semi-conducteurs |
EP0381051A1 (fr) * | 1989-01-27 | 1990-08-08 | HELIOTRONIC Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH | Croissance de films, en particulier semi-conducteurs, à partir de la phase fondue à l'aide d'un substrat à surface profilée |
Also Published As
Publication number | Publication date |
---|---|
IL51680A0 (en) | 1977-05-31 |
DE7708120U1 (de) | 1977-10-27 |
DE2711484A1 (de) | 1977-10-20 |
US4268483A (en) | 1981-05-19 |
GB1577413A (en) | 1980-10-22 |
DE2711513A1 (de) | 1977-09-29 |
DE7708133U1 (de) | 1977-10-20 |
JPS52134884A (en) | 1977-11-11 |
FR2344455A1 (fr) | 1977-10-14 |
NL7702924A (nl) | 1977-09-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
CD | Change of name or company name | ||
TP | Transmission of property |