FR2492591B1 - - Google Patents

Info

Publication number
FR2492591B1
FR2492591B1 FR8119237A FR8119237A FR2492591B1 FR 2492591 B1 FR2492591 B1 FR 2492591B1 FR 8119237 A FR8119237 A FR 8119237A FR 8119237 A FR8119237 A FR 8119237A FR 2492591 B1 FR2492591 B1 FR 2492591B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8119237A
Other languages
French (fr)
Other versions
FR2492591A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2492591A1 publication Critical patent/FR2492591A1/fr
Application granted granted Critical
Publication of FR2492591B1 publication Critical patent/FR2492591B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H10P50/287—
    • H10P50/283—
    • H10P50/73—
    • H10P14/683—
FR8119237A 1980-10-20 1981-10-13 Procede de fabrication d'un circuit integre Granted FR2492591A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/199,023 US4333793A (en) 1980-10-20 1980-10-20 High-selectivity plasma-assisted etching of resist-masked layer

Publications (2)

Publication Number Publication Date
FR2492591A1 FR2492591A1 (fr) 1982-04-23
FR2492591B1 true FR2492591B1 (oth) 1984-12-21

Family

ID=22735887

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8119237A Granted FR2492591A1 (fr) 1980-10-20 1981-10-13 Procede de fabrication d'un circuit integre

Country Status (13)

Country Link
US (1) US4333793A (oth)
JP (1) JPS5799745A (oth)
BE (1) BE890772A (oth)
CA (1) CA1160759A (oth)
DE (1) DE3140890C2 (oth)
ES (1) ES506354A0 (oth)
FR (1) FR2492591A1 (oth)
GB (1) GB2085809B (oth)
HK (1) HK6786A (oth)
IE (1) IE52530B1 (oth)
IT (1) IT1139988B (oth)
NL (1) NL191587C (oth)
SE (1) SE455743B (oth)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3173581D1 (en) * 1980-10-28 1986-03-06 Toshiba Kk Masking process for semiconductor devices using a polymer film
US4397724A (en) * 1981-08-24 1983-08-09 Bell Telephone Laboratories, Incorporated Apparatus and method for plasma-assisted etching of wafers
US4372807A (en) * 1982-03-25 1983-02-08 Rca Corporation Plasma etching of aluminum
US4375385A (en) * 1982-03-25 1983-03-01 Rca Corporation Plasma etching of aluminum
JPS58204537A (ja) * 1982-05-24 1983-11-29 Hitachi Ltd プラズマエツチング方法
US4422897A (en) * 1982-05-25 1983-12-27 Massachusetts Institute Of Technology Process for selectively etching silicon
US4436584A (en) 1983-03-21 1984-03-13 Sperry Corporation Anisotropic plasma etching of semiconductors
US4451349A (en) * 1983-04-20 1984-05-29 International Business Machines Corporation Electrode treatment for plasma patterning of polymers
JPH0622212B2 (ja) * 1983-05-31 1994-03-23 株式会社東芝 ドライエッチング方法
US4430153A (en) 1983-06-30 1984-02-07 International Business Machines Corporation Method of forming an RIE etch barrier by in situ conversion of a silicon containing alkyl polyamide/polyimide
US4452665A (en) * 1983-10-12 1984-06-05 International Business Machines Corporation Polymeric halocarbons as plasma etch barriers
US4470871A (en) * 1983-12-27 1984-09-11 Rca Corporation Preparation of organic layers for oxygen etching
US4534826A (en) * 1983-12-29 1985-08-13 Ibm Corporation Trench etch process for dielectric isolation
US4601913A (en) * 1984-06-27 1986-07-22 International Business Machines Corporation Underlay surface modification to control resin glass polymerization
US4528066A (en) * 1984-07-06 1985-07-09 Ibm Corporation Selective anisotropic reactive ion etching process for polysilicide composite structures
US4613400A (en) * 1985-05-20 1986-09-23 Applied Materials, Inc. In-situ photoresist capping process for plasma etching
DE3615519A1 (de) * 1986-05-07 1987-11-12 Siemens Ag Verfahren zum erzeugen von kontaktloechern mit abgeschraegten flanken in zwischenoxidschichten
US5332653A (en) * 1992-07-01 1994-07-26 Motorola, Inc. Process for forming a conductive region without photoresist-related reflective notching damage
US5562801A (en) * 1994-04-28 1996-10-08 Cypress Semiconductor Corporation Method of etching an oxide layer
JP3073906B2 (ja) * 1995-03-27 2000-08-07 財団法人国際超電導産業技術研究センター 超電導デバイスの製造方法
KR100327346B1 (ko) * 1999-07-20 2002-03-06 윤종용 선택적 폴리머 증착을 이용한 플라즈마 식각방법 및 이를이용한 콘택홀 형성방법
US6699792B1 (en) * 2001-07-17 2004-03-02 Advanced Micro Devices, Inc. Polymer spacers for creating small geometry space and method of manufacture thereof
CN100451831C (zh) * 2001-10-29 2009-01-14 旺宏电子股份有限公司 减小图案间隙或开口尺寸的方法
US6573177B1 (en) * 2002-02-19 2003-06-03 Macronix International Co., Ltd. Protection layer to prevent under-layer damage during deposition
US9159561B2 (en) 2013-12-26 2015-10-13 Taiwan Semiconductor Manufacturing Company, Ltd. Method for overcoming broken line and photoresist scum issues in tri-layer photoresist patterning
CN115047728B (zh) * 2022-07-01 2025-04-08 中国科学院光电技术研究所 等离子体共振腔透镜光刻的成像结构保护方法及其结构

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3692655A (en) * 1971-04-05 1972-09-19 Rca Corp Method of radiofrequency sputter etching
US3816196A (en) * 1971-06-07 1974-06-11 Gen Electric Passivation of photoresist materials used in selective plasma etching
GB1417085A (en) * 1973-05-17 1975-12-10 Standard Telephones Cables Ltd Plasma etching
EP0001538B1 (fr) * 1977-10-06 1983-01-12 International Business Machines Corporation Procédé de décapage sélectif par ions réactifs d'un élément
JPS5454578A (en) * 1977-10-11 1979-04-28 Fujitsu Ltd Gas plasma etching method
JPS5470772A (en) * 1977-11-16 1979-06-06 Cho Lsi Gijutsu Kenkyu Kumiai Dry etching method
US4226896A (en) * 1977-12-23 1980-10-07 International Business Machines Corporation Plasma method for forming a metal containing polymer
US4244799A (en) * 1978-09-11 1981-01-13 Bell Telephone Laboratories, Incorporated Fabrication of integrated circuits utilizing thick high-resolution patterns
US4275286A (en) * 1978-12-04 1981-06-23 Hughes Aircraft Company Process and mask for ion beam etching of fine patterns

Also Published As

Publication number Publication date
HK6786A (en) 1986-02-07
DE3140890C2 (de) 1997-08-21
NL8104741A (nl) 1982-05-17
CA1160759A (en) 1984-01-17
NL191587C (nl) 1995-10-03
US4333793A (en) 1982-06-08
ES8207386A1 (es) 1982-09-01
FR2492591A1 (fr) 1982-04-23
DE3140890A1 (de) 1982-06-16
SE455743B (sv) 1988-08-01
GB2085809B (en) 1984-06-20
IT1139988B (it) 1986-09-24
IE52530B1 (en) 1987-12-09
NL191587B (nl) 1995-06-01
IE812455L (en) 1982-04-20
GB2085809A (en) 1982-05-06
ES506354A0 (es) 1982-09-01
JPS5799745A (en) 1982-06-21
BE890772A (fr) 1982-02-15
IT8124559A0 (it) 1981-10-19
SE8105859L (sv) 1982-04-21

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Legal Events

Date Code Title Description
ST Notification of lapse