FR2488731A1 - Claie support pour plaquettes semi-conductrices - Google Patents

Claie support pour plaquettes semi-conductrices Download PDF

Info

Publication number
FR2488731A1
FR2488731A1 FR8115738A FR8115738A FR2488731A1 FR 2488731 A1 FR2488731 A1 FR 2488731A1 FR 8115738 A FR8115738 A FR 8115738A FR 8115738 A FR8115738 A FR 8115738A FR 2488731 A1 FR2488731 A1 FR 2488731A1
Authority
FR
France
Prior art keywords
bars
slots
support
quartz glass
rack
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8115738A
Other languages
English (en)
French (fr)
Other versions
FR2488731B3 (esLanguage
Inventor
C J Bayne
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Heraeus Quarzschmelze GmbH
Heraeus Schott Quarzschmelze GmbH
Original Assignee
Heraeus Quarzschmelze GmbH
Heraeus Schott Quarzschmelze GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Heraeus Quarzschmelze GmbH, Heraeus Schott Quarzschmelze GmbH filed Critical Heraeus Quarzschmelze GmbH
Publication of FR2488731A1 publication Critical patent/FR2488731A1/fr
Application granted granted Critical
Publication of FR2488731B3 publication Critical patent/FR2488731B3/fr
Granted legal-status Critical Current

Links

Classifications

    • H10P72/135—
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/10—Reaction chambers; Selection of materials therefor
    • C30B31/103—Mechanisms for moving either the charge or heater
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/005—Oxydation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Packaging Frangible Articles (AREA)
FR8115738A 1980-08-16 1981-08-14 Claie support pour plaquettes semi-conductrices Granted FR2488731A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19808021868U DE8021868U1 (de) 1980-08-16 1980-08-16 Traegerhorde fuer halbleiterscheiben

Publications (2)

Publication Number Publication Date
FR2488731A1 true FR2488731A1 (fr) 1982-02-19
FR2488731B3 FR2488731B3 (esLanguage) 1983-06-10

Family

ID=6718055

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8115738A Granted FR2488731A1 (fr) 1980-08-16 1981-08-14 Claie support pour plaquettes semi-conductrices

Country Status (4)

Country Link
JP (1) JPS5737826A (esLanguage)
DE (1) DE8021868U1 (esLanguage)
FR (1) FR2488731A1 (esLanguage)
GB (1) GB2082388B (esLanguage)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5844836U (ja) * 1981-09-21 1983-03-25 日本電気ホームエレクトロニクス株式会社 半導体製造治具
EP0100539A3 (en) * 1982-07-30 1985-05-22 Tecnisco Ltd. Assembled device for supporting semiconductor wafers or the like
DE3419866C2 (de) * 1984-05-28 1986-06-26 Heraeus Quarzschmelze Gmbh, 6450 Hanau Trägerhorde aus Quarzglas für scheibenförmige Substrate
DE3440111C1 (de) * 1984-11-02 1986-05-15 Heraeus Quarzschmelze Gmbh, 6450 Hanau Traegerhorde
DE3441887C1 (de) * 1984-11-16 1985-10-17 Heraeus Quarzschmelze Gmbh, 6450 Hanau Ofen fuer die Waermebehandlung von Halbleiter-Substraten
EP0267462A3 (en) * 1986-11-12 1990-01-31 Heraeus Amersil, Inc. Mass transferable semiconductor substrate processing and handling full shell carrier (boat)
DE3829159A1 (de) * 1988-08-27 1990-03-08 Westdeutsche Quarzschmelze Gmb Vorrichtung zur aufnahme von halbleiterscheibchen
DE69529333T2 (de) * 1994-08-31 2004-01-15 Heraeus Quarzglas Verfahren zur herstellung einer quarzglas-haltevorrichtung zur wärmebehandlung von silizium-wafern

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5068775A (esLanguage) * 1973-10-19 1975-06-09
JPS53133366A (en) * 1977-04-27 1978-11-21 Nec Corp Impurity diffusion method

Also Published As

Publication number Publication date
JPS6141128B2 (esLanguage) 1986-09-12
GB2082388A (en) 1982-03-03
JPS5737826A (en) 1982-03-02
DE8021868U1 (de) 1981-01-29
FR2488731B3 (esLanguage) 1983-06-10
GB2082388B (en) 1984-05-23

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