FR2488046A1 - Dispositif de puissance a commande par transistor dmos - Google Patents
Dispositif de puissance a commande par transistor dmos Download PDFInfo
- Publication number
- FR2488046A1 FR2488046A1 FR8016923A FR8016923A FR2488046A1 FR 2488046 A1 FR2488046 A1 FR 2488046A1 FR 8016923 A FR8016923 A FR 8016923A FR 8016923 A FR8016923 A FR 8016923A FR 2488046 A1 FR2488046 A1 FR 2488046A1
- Authority
- FR
- France
- Prior art keywords
- layer
- type
- power device
- dmos
- face
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 11
- 239000000758 substrate Substances 0.000 title claims description 16
- 230000005669 field effect Effects 0.000 claims description 22
- 238000001465 metallisation Methods 0.000 claims description 12
- 238000009792 diffusion process Methods 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 102100031680 Beta-catenin-interacting protein 1 Human genes 0.000 claims 1
- 101000993469 Homo sapiens Beta-catenin-interacting protein 1 Proteins 0.000 claims 1
- 150000002500 ions Chemical class 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 241001354791 Baliga Species 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/40—Thyristors with turn-on by field effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/121—BJTs having built-in components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
- H10F30/282—Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors
Landscapes
- Thyristors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8016923A FR2488046A1 (fr) | 1980-07-31 | 1980-07-31 | Dispositif de puissance a commande par transistor dmos |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8016923A FR2488046A1 (fr) | 1980-07-31 | 1980-07-31 | Dispositif de puissance a commande par transistor dmos |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2488046A1 true FR2488046A1 (fr) | 1982-02-05 |
| FR2488046B1 FR2488046B1 (cs) | 1984-08-24 |
Family
ID=9244756
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8016923A Granted FR2488046A1 (fr) | 1980-07-31 | 1980-07-31 | Dispositif de puissance a commande par transistor dmos |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2488046A1 (cs) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2524710A1 (fr) * | 1982-04-01 | 1983-10-07 | Gen Electric | Dispositif de commutation a semi-conducteur |
| FR2538170A1 (fr) * | 1982-12-21 | 1984-06-22 | Int Rectifier Corp | Circuit de relais de courant alternatif a semi-conducteurs et structure de thyristor associee |
| EP0118309A3 (en) * | 1983-03-03 | 1984-11-14 | Texas Instruments Incorporated | Starter circuit for a fluorescent tube lamp |
| EP0091094A3 (en) * | 1982-04-05 | 1986-03-26 | General Electric Company | Insulated gate rectifier with improved current-carrying capability |
| EP0118007A3 (en) * | 1983-02-04 | 1986-06-25 | General Electric Company | Hybrid power switching semiconductor devices including scr structures |
| EP0190423A3 (en) * | 1984-11-29 | 1988-01-27 | Kabushiki Kaisha Toshiba | Planar semiconductor device having a field plate electrode |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3328604A (en) * | 1964-08-27 | 1967-06-27 | Rca Corp | Integrated semiconductor logic circuits |
| US3433677A (en) * | 1967-04-05 | 1969-03-18 | Cornell Aeronautical Labor Inc | Flexible sheet thin-film photovoltaic generator |
| FR2110299A1 (cs) * | 1970-10-08 | 1972-06-02 | Matsushita Electric Industrial Co Ltd | |
| FR2181052A1 (cs) * | 1972-04-20 | 1973-11-30 | Ncr Co | |
| FR2422258A1 (fr) * | 1978-01-19 | 1979-11-02 | Radiotechnique Compelec | Dispositif semiconducteur monolithique a transistors de types mos et bipolaire |
| EP0014435A1 (de) * | 1979-02-06 | 1980-08-20 | Siemens Aktiengesellschaft | Thyristor mit Steuerung durch Feldeffekttransistor |
| EP0017980A1 (de) * | 1979-04-19 | 1980-10-29 | Siemens Aktiengesellschaft | Thyristor mit Steuerung durch Feldeffekttransistor |
-
1980
- 1980-07-31 FR FR8016923A patent/FR2488046A1/fr active Granted
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3328604A (en) * | 1964-08-27 | 1967-06-27 | Rca Corp | Integrated semiconductor logic circuits |
| US3433677A (en) * | 1967-04-05 | 1969-03-18 | Cornell Aeronautical Labor Inc | Flexible sheet thin-film photovoltaic generator |
| FR2110299A1 (cs) * | 1970-10-08 | 1972-06-02 | Matsushita Electric Industrial Co Ltd | |
| FR2181052A1 (cs) * | 1972-04-20 | 1973-11-30 | Ncr Co | |
| FR2422258A1 (fr) * | 1978-01-19 | 1979-11-02 | Radiotechnique Compelec | Dispositif semiconducteur monolithique a transistors de types mos et bipolaire |
| EP0014435A1 (de) * | 1979-02-06 | 1980-08-20 | Siemens Aktiengesellschaft | Thyristor mit Steuerung durch Feldeffekttransistor |
| EP0017980A1 (de) * | 1979-04-19 | 1980-10-29 | Siemens Aktiengesellschaft | Thyristor mit Steuerung durch Feldeffekttransistor |
Non-Patent Citations (2)
| Title |
|---|
| EXBK/78 * |
| EXBK/79 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2524710A1 (fr) * | 1982-04-01 | 1983-10-07 | Gen Electric | Dispositif de commutation a semi-conducteur |
| EP0091094A3 (en) * | 1982-04-05 | 1986-03-26 | General Electric Company | Insulated gate rectifier with improved current-carrying capability |
| FR2538170A1 (fr) * | 1982-12-21 | 1984-06-22 | Int Rectifier Corp | Circuit de relais de courant alternatif a semi-conducteurs et structure de thyristor associee |
| EP0118007A3 (en) * | 1983-02-04 | 1986-06-25 | General Electric Company | Hybrid power switching semiconductor devices including scr structures |
| EP0118309A3 (en) * | 1983-03-03 | 1984-11-14 | Texas Instruments Incorporated | Starter circuit for a fluorescent tube lamp |
| EP0190423A3 (en) * | 1984-11-29 | 1988-01-27 | Kabushiki Kaisha Toshiba | Planar semiconductor device having a field plate electrode |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2488046B1 (cs) | 1984-08-24 |
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