FR2181052A1 - - Google Patents

Info

Publication number
FR2181052A1
FR2181052A1 FR7314512A FR7314512A FR2181052A1 FR 2181052 A1 FR2181052 A1 FR 2181052A1 FR 7314512 A FR7314512 A FR 7314512A FR 7314512 A FR7314512 A FR 7314512A FR 2181052 A1 FR2181052 A1 FR 2181052A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7314512A
Other languages
French (fr)
Other versions
FR2181052B1 (cs
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NCR Voyix Corp
National Cash Register Co
Original Assignee
NCR Corp
National Cash Register Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NCR Corp, National Cash Register Co filed Critical NCR Corp
Publication of FR2181052A1 publication Critical patent/FR2181052A1/fr
Application granted granted Critical
Publication of FR2181052B1 publication Critical patent/FR2181052B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/40—Thyristors with turn-on by field effect 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/251—Lateral thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/676—Combinations of only thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
FR7314512A 1972-04-20 1973-04-20 Expired FR2181052B1 (cs)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US24605972A 1972-04-20 1972-04-20

Publications (2)

Publication Number Publication Date
FR2181052A1 true FR2181052A1 (cs) 1973-11-30
FR2181052B1 FR2181052B1 (cs) 1978-05-12

Family

ID=22929171

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7314512A Expired FR2181052B1 (cs) 1972-04-20 1973-04-20

Country Status (5)

Country Link
JP (1) JPS4918581A (cs)
CA (1) CA975088A (cs)
DE (1) DE2319644A1 (cs)
FR (1) FR2181052B1 (cs)
GB (1) GB1366231A (cs)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2488046A1 (fr) * 1980-07-31 1982-02-05 Silicium Semiconducteur Ssc Dispositif de puissance a commande par transistor dmos
US4595941A (en) * 1980-12-03 1986-06-17 Rca Corporation Protection circuit for integrated circuit devices

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5128762A (cs) * 1974-09-04 1976-03-11 Tokyo Shibaura Electric Co

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2488046A1 (fr) * 1980-07-31 1982-02-05 Silicium Semiconducteur Ssc Dispositif de puissance a commande par transistor dmos
US4595941A (en) * 1980-12-03 1986-06-17 Rca Corporation Protection circuit for integrated circuit devices

Also Published As

Publication number Publication date
FR2181052B1 (cs) 1978-05-12
JPS4918581A (cs) 1974-02-19
GB1366231A (en) 1974-09-11
CA975088A (en) 1975-09-23
DE2319644A1 (de) 1973-10-25

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Legal Events

Date Code Title Description
CD Change of name or company name
ST Notification of lapse