FR2488046B1 - - Google Patents

Info

Publication number
FR2488046B1
FR2488046B1 FR8016923A FR8016923A FR2488046B1 FR 2488046 B1 FR2488046 B1 FR 2488046B1 FR 8016923 A FR8016923 A FR 8016923A FR 8016923 A FR8016923 A FR 8016923A FR 2488046 B1 FR2488046 B1 FR 2488046B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8016923A
Other languages
French (fr)
Other versions
FR2488046A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SILICIUM SEMICONDUCTEUR SSC
Original Assignee
SILICIUM SEMICONDUCTEUR SSC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SILICIUM SEMICONDUCTEUR SSC filed Critical SILICIUM SEMICONDUCTEUR SSC
Priority to FR8016923A priority Critical patent/FR2488046A1/fr
Publication of FR2488046A1 publication Critical patent/FR2488046A1/fr
Application granted granted Critical
Publication of FR2488046B1 publication Critical patent/FR2488046B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/40—Thyristors with turn-on by field effect 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121—BJTs having built-in components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/282—Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors
FR8016923A 1980-07-31 1980-07-31 Dispositif de puissance a commande par transistor dmos Granted FR2488046A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8016923A FR2488046A1 (fr) 1980-07-31 1980-07-31 Dispositif de puissance a commande par transistor dmos

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8016923A FR2488046A1 (fr) 1980-07-31 1980-07-31 Dispositif de puissance a commande par transistor dmos

Publications (2)

Publication Number Publication Date
FR2488046A1 FR2488046A1 (fr) 1982-02-05
FR2488046B1 true FR2488046B1 (cs) 1984-08-24

Family

ID=9244756

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8016923A Granted FR2488046A1 (fr) 1980-07-31 1980-07-31 Dispositif de puissance a commande par transistor dmos

Country Status (1)

Country Link
FR (1) FR2488046A1 (cs)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58212173A (ja) * 1982-04-01 1983-12-09 株式会社東芝 制御装置を備えたバイポ−ラ・トランジスタ装置
IE55992B1 (en) * 1982-04-05 1991-03-13 Gen Electric Insulated gate rectifier with improved current-carrying capability
IL70462A (en) * 1982-12-21 1987-09-16 Int Rectifier Corp A.c.solid state relay circuit and thyristor structure
EP0118007B1 (en) * 1983-02-04 1990-05-23 General Electric Company Electrical circuit comprising a hybrid power switching semiconductor device including an scr structure
GB8305878D0 (en) * 1983-03-03 1983-04-07 Texas Instruments Ltd Starter circuit
KR890004495B1 (ko) * 1984-11-29 1989-11-06 가부시끼가이샤 도오시바 반도체 장치

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3328604A (en) * 1964-08-27 1967-06-27 Rca Corp Integrated semiconductor logic circuits
US3433677A (en) * 1967-04-05 1969-03-18 Cornell Aeronautical Labor Inc Flexible sheet thin-film photovoltaic generator
JPS5125116B1 (cs) * 1970-10-08 1976-07-28
CA975088A (en) * 1972-04-20 1975-09-23 Ncr Corporation Four layer switching device
FR2422258A1 (fr) * 1978-01-19 1979-11-02 Radiotechnique Compelec Dispositif semiconducteur monolithique a transistors de types mos et bipolaire
DE2904424C2 (de) * 1979-02-06 1982-09-02 Siemens AG, 1000 Berlin und 8000 München Thyristor mit Steuerung durch Feldeffekttransistor
DE2915885C2 (de) * 1979-04-19 1983-11-17 Siemens AG, 1000 Berlin und 8000 München Thyristor mit Steuerung durch Feldeffekttransistor

Also Published As

Publication number Publication date
FR2488046A1 (fr) 1982-02-05

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