FR2487575A1 - Procede pour fabriquer des transistors de puissance a parametres modifies par irradiation d'electrons - Google Patents

Procede pour fabriquer des transistors de puissance a parametres modifies par irradiation d'electrons Download PDF

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Publication number
FR2487575A1
FR2487575A1 FR8112337A FR8112337A FR2487575A1 FR 2487575 A1 FR2487575 A1 FR 2487575A1 FR 8112337 A FR8112337 A FR 8112337A FR 8112337 A FR8112337 A FR 8112337A FR 2487575 A1 FR2487575 A1 FR 2487575A1
Authority
FR
France
Prior art keywords
multiplied
radiation
gain
collector
lifetime
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8112337A
Other languages
English (en)
French (fr)
Other versions
FR2487575B1 (enrdf_load_stackoverflow
Inventor
Philip Leland Hower
Richard Joseph Fiedor
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of FR2487575A1 publication Critical patent/FR2487575A1/fr
Application granted granted Critical
Publication of FR2487575B1 publication Critical patent/FR2487575B1/fr
Granted legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Thyristors (AREA)
FR8112337A 1980-07-24 1981-06-23 Procede pour fabriquer des transistors de puissance a parametres modifies par irradiation d'electrons Granted FR2487575A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US17178780A 1980-07-24 1980-07-24

Publications (2)

Publication Number Publication Date
FR2487575A1 true FR2487575A1 (fr) 1982-01-29
FR2487575B1 FR2487575B1 (enrdf_load_stackoverflow) 1984-06-15

Family

ID=22625139

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8112337A Granted FR2487575A1 (fr) 1980-07-24 1981-06-23 Procede pour fabriquer des transistors de puissance a parametres modifies par irradiation d'electrons

Country Status (7)

Country Link
JP (1) JPS5753978A (enrdf_load_stackoverflow)
BR (1) BR8101653A (enrdf_load_stackoverflow)
CA (1) CA1165467A (enrdf_load_stackoverflow)
DE (1) DE3111598A1 (enrdf_load_stackoverflow)
FR (1) FR2487575A1 (enrdf_load_stackoverflow)
GB (1) GB2081009A (enrdf_load_stackoverflow)
IN (1) IN153170B (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH670332A5 (enrdf_load_stackoverflow) * 1986-09-17 1989-05-31 Bbc Brown Boveri & Cie
EP0398120B1 (de) * 1989-05-18 1993-10-13 Asea Brown Boveri Ag Halbleiterbauelement
GB0318146D0 (en) 2003-08-02 2003-09-03 Zetex Plc Bipolar transistor with a low saturation voltage

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3933527A (en) * 1973-03-09 1976-01-20 Westinghouse Electric Corporation Fine tuning power diodes with irradiation
US4075037A (en) * 1976-05-17 1978-02-21 Westinghouse Electric Corporation Tailoring of recovery charge in power diodes and thyristors by irradiation

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3933527A (en) * 1973-03-09 1976-01-20 Westinghouse Electric Corporation Fine tuning power diodes with irradiation
US4075037A (en) * 1976-05-17 1978-02-21 Westinghouse Electric Corporation Tailoring of recovery charge in power diodes and thyristors by irradiation

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. ED-23, no 8, août 1976 P. RAI-CHOUDHURY et al. "Electron irradiation induced recombination centers in silicon-minority carrier lifetime control", pages 814, 818 *

Also Published As

Publication number Publication date
IN153170B (enrdf_load_stackoverflow) 1984-06-09
GB2081009A (en) 1982-02-10
CA1165467A (en) 1984-04-10
BR8101653A (pt) 1982-08-17
JPS5753978A (enrdf_load_stackoverflow) 1982-03-31
FR2487575B1 (enrdf_load_stackoverflow) 1984-06-15
DE3111598A1 (de) 1982-03-11

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