DE3111598A1 - "verfahren zur elektronenbestrahlung von transistoren" - Google Patents

"verfahren zur elektronenbestrahlung von transistoren"

Info

Publication number
DE3111598A1
DE3111598A1 DE19813111598 DE3111598A DE3111598A1 DE 3111598 A1 DE3111598 A1 DE 3111598A1 DE 19813111598 DE19813111598 DE 19813111598 DE 3111598 A DE3111598 A DE 3111598A DE 3111598 A1 DE3111598 A1 DE 3111598A1
Authority
DE
Germany
Prior art keywords
collector
transistor
gain
radiation
storage time
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19813111598
Other languages
German (de)
English (en)
Inventor
Richard J. Penn Hills Pa. Fiedor
Philip L. Pittsburgh Pa. Hower
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of DE3111598A1 publication Critical patent/DE3111598A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Thyristors (AREA)
DE19813111598 1980-07-24 1981-03-24 "verfahren zur elektronenbestrahlung von transistoren" Withdrawn DE3111598A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US17178780A 1980-07-24 1980-07-24

Publications (1)

Publication Number Publication Date
DE3111598A1 true DE3111598A1 (de) 1982-03-11

Family

ID=22625139

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19813111598 Withdrawn DE3111598A1 (de) 1980-07-24 1981-03-24 "verfahren zur elektronenbestrahlung von transistoren"

Country Status (7)

Country Link
JP (1) JPS5753978A (enrdf_load_stackoverflow)
BR (1) BR8101653A (enrdf_load_stackoverflow)
CA (1) CA1165467A (enrdf_load_stackoverflow)
DE (1) DE3111598A1 (enrdf_load_stackoverflow)
FR (1) FR2487575A1 (enrdf_load_stackoverflow)
GB (1) GB2081009A (enrdf_load_stackoverflow)
IN (1) IN153170B (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH670332A5 (enrdf_load_stackoverflow) * 1986-09-17 1989-05-31 Bbc Brown Boveri & Cie
DE59003052D1 (de) * 1989-05-18 1993-11-18 Asea Brown Boveri Halbleiterbauelement.
GB0318146D0 (en) 2003-08-02 2003-09-03 Zetex Plc Bipolar transistor with a low saturation voltage

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3933527A (en) * 1973-03-09 1976-01-20 Westinghouse Electric Corporation Fine tuning power diodes with irradiation
US4075037A (en) * 1976-05-17 1978-02-21 Westinghouse Electric Corporation Tailoring of recovery charge in power diodes and thyristors by irradiation

Also Published As

Publication number Publication date
IN153170B (enrdf_load_stackoverflow) 1984-06-09
FR2487575A1 (fr) 1982-01-29
GB2081009A (en) 1982-02-10
BR8101653A (pt) 1982-08-17
FR2487575B1 (enrdf_load_stackoverflow) 1984-06-15
CA1165467A (en) 1984-04-10
JPS5753978A (enrdf_load_stackoverflow) 1982-03-31

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Legal Events

Date Code Title Description
8139 Disposal/non-payment of the annual fee