FR2485265A1 - Dispositif semiconducteur programmable et son procede de fabrication - Google Patents

Dispositif semiconducteur programmable et son procede de fabrication Download PDF

Info

Publication number
FR2485265A1
FR2485265A1 FR8109005A FR8109005A FR2485265A1 FR 2485265 A1 FR2485265 A1 FR 2485265A1 FR 8109005 A FR8109005 A FR 8109005A FR 8109005 A FR8109005 A FR 8109005A FR 2485265 A1 FR2485265 A1 FR 2485265A1
Authority
FR
France
Prior art keywords
strip
conductor
semiconductor
programmable
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8109005A
Other languages
English (en)
French (fr)
Other versions
FR2485265B1 (enExample
Inventor
Ties Siebolt Te Velde
Aris Slob
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2485265A1 publication Critical patent/FR2485265A1/fr
Application granted granted Critical
Publication of FR2485265B1 publication Critical patent/FR2485265B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00—Electrostatic relays; Electro-adhesion relays
    • H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
    • H10W20/493—Fuses, i.e. interconnections changeable from conductive to non-conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0036—Switches making use of microelectromechanical systems [MEMS]

Landscapes

  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Weting (AREA)
FR8109005A 1980-05-08 1981-05-06 Dispositif semiconducteur programmable et son procede de fabrication Granted FR2485265A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8002635A NL8002635A (nl) 1980-05-08 1980-05-08 Programmeerbare halfgeleiderinrichting en werkwijze ter vervaardiging daarvan.

Publications (2)

Publication Number Publication Date
FR2485265A1 true FR2485265A1 (fr) 1981-12-24
FR2485265B1 FR2485265B1 (enExample) 1984-10-19

Family

ID=19835256

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8109005A Granted FR2485265A1 (fr) 1980-05-08 1981-05-06 Dispositif semiconducteur programmable et son procede de fabrication

Country Status (7)

Country Link
US (1) US4528583A (enExample)
JP (1) JPS5829630B2 (enExample)
AU (1) AU7014381A (enExample)
DE (1) DE3116324A1 (enExample)
FR (1) FR2485265A1 (enExample)
GB (1) GB2075750B (enExample)
NL (1) NL8002635A (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4356730A (en) * 1981-01-08 1982-11-02 International Business Machines Corporation Electrostatically deformographic switches
US4879587A (en) * 1986-11-13 1989-11-07 Transensory Devices, Inc. Apparatus and method for forming fusible links
US5121089A (en) * 1990-11-01 1992-06-09 Hughes Aircraft Company Micro-machined switch and method of fabrication
EP0852337A1 (en) * 1996-12-24 1998-07-08 STMicroelectronics S.r.l. A hermetically sealed semiconductor inertial sensor
US6288437B1 (en) * 1999-02-26 2001-09-11 Micron Technology, Inc. Antifuse structures methods and applications
EP1093143A1 (en) * 1999-10-15 2001-04-18 Lucent Technologies Inc. Flip-chip bonded micro-relay on integrated circuit chip
JP3775276B2 (ja) * 2001-10-24 2006-05-17 株式会社デンソー 静電アクチュエータ
US7196369B2 (en) * 2002-07-15 2007-03-27 Macronix International Co., Ltd. Plasma damage protection circuit for a semiconductor device
US7170816B2 (en) * 2004-12-16 2007-01-30 Macronix International Co., Ltd. Method and apparatus for passing charge from word lines during manufacture
US9490249B2 (en) 2014-04-30 2016-11-08 Macronix International Co., Ltd. Antenna effect discharge circuit and manufacturing method

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2009775A1 (enExample) * 1968-05-31 1970-02-06 Westinghouse Electric Corp
FR2088515A1 (enExample) * 1970-05-12 1972-01-07 Siemens Ag
US3672985A (en) * 1970-05-05 1972-06-27 Westinghouse Electric Corp Conductor elements spaced from microelectronic component surface and methods of making the same
GB1311178A (en) * 1970-09-19 1973-03-21 Ferranti Ltd Semiconductor devices
FR2189869A1 (enExample) * 1972-06-20 1974-01-25 Western Electric Co
US4054484A (en) * 1975-10-23 1977-10-18 Bell Telephone Laboratories, Incorporated Method of forming crossover connections
US4089734A (en) * 1974-09-16 1978-05-16 Raytheon Company Integrated circuit fusing technique
FR2441923A1 (fr) * 1978-11-14 1980-06-13 Philips Nv Systeme de cablage, son procede de fabrication et dispositif semi-conducteur muni d'un tel systeme

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1154679A (en) * 1967-03-13 1969-06-11 Ncr Co Magnetic Field Sensing Device.
US3564354A (en) * 1968-12-11 1971-02-16 Signetics Corp Semiconductor structure with fusible link and method
US3575645A (en) * 1969-07-17 1971-04-20 Gen Motors Corp Power zener package
JPS5240081A (en) * 1975-09-26 1977-03-28 Hitachi Ltd Bi-polar rom
US4222062A (en) * 1976-05-04 1980-09-09 American Microsystems, Inc. VMOS Floating gate memory device

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2009775A1 (enExample) * 1968-05-31 1970-02-06 Westinghouse Electric Corp
US3539705A (en) * 1968-05-31 1970-11-10 Westinghouse Electric Corp Microelectronic conductor configurations and method of making the same
US3672985A (en) * 1970-05-05 1972-06-27 Westinghouse Electric Corp Conductor elements spaced from microelectronic component surface and methods of making the same
FR2088515A1 (enExample) * 1970-05-12 1972-01-07 Siemens Ag
GB1311178A (en) * 1970-09-19 1973-03-21 Ferranti Ltd Semiconductor devices
US3781977A (en) * 1970-09-19 1974-01-01 Ferrant Ltd Semiconductor devices
FR2189869A1 (enExample) * 1972-06-20 1974-01-25 Western Electric Co
US4089734A (en) * 1974-09-16 1978-05-16 Raytheon Company Integrated circuit fusing technique
US4054484A (en) * 1975-10-23 1977-10-18 Bell Telephone Laboratories, Incorporated Method of forming crossover connections
FR2441923A1 (fr) * 1978-11-14 1980-06-13 Philips Nv Systeme de cablage, son procede de fabrication et dispositif semi-conducteur muni d'un tel systeme

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/ *

Also Published As

Publication number Publication date
GB2075750A (en) 1981-11-18
FR2485265B1 (enExample) 1984-10-19
AU7014381A (en) 1981-11-12
DE3116324A1 (de) 1982-03-04
US4528583A (en) 1985-07-09
JPS5829630B2 (ja) 1983-06-23
GB2075750B (en) 1983-12-21
NL8002635A (nl) 1981-12-01
JPS574154A (en) 1982-01-09

Similar Documents

Publication Publication Date Title
FR2485264A1 (fr) Dispositif semiconducteur programmable et son procede de fabrication
EP0207853B1 (fr) Procédé de montage d'un circuit intégré sur un support, dispositif en résultant et son application à une carte à microcircuits électroniques
EP0197438B1 (fr) Procédé de fabrication de modules électroniques pour cartes à microcircuits et modules obtenus selon ce procédé
FR2604014A1 (fr) Dispositif de conversion de l'information comportant des lignes auxiliaires d'adresses afin d'ameliorer le rendement de fabrication
FR2485265A1 (fr) Dispositif semiconducteur programmable et son procede de fabrication
EP0094716A1 (fr) Procédé pour connecter un semi-conducteur à des éléments d'un support, notamment d'une carte portative
FR2725309A1 (fr) Dispositif memoire non volatile a semi-conducteurs et procede de fabrication de celui-ci
EP0801419A1 (fr) Procédé d'obtention d'un film mince de matériau semiconducteur comprenant notamment des composants électroniques
EP0245147A1 (fr) Panneau de prise de vue radiologique, et procédé de fabrication
FR2463978A1 (fr) Cellule solaire integree avec une diode de derivation et son procede de fabrication
FR2960346B1 (fr) Procede de fabrication d'une batterie en couche mince et batterie ainsi realisee
FR2597262A1 (fr) Circuit integre a semi-conducteur avec condensateur de derivation associe a son cablage
FR2621172A1 (fr) Procede de fabrication de dispositifs a semiconducteur ayant un contact ohmique
FR2468208A1 (fr) Dispositif semiconducteur avec une diode zener
EP0002087B1 (fr) Dispositif semiconducteur monolithique comprenant deux transistors complémentaires et son procédé de fabrication
FR2502399A1 (fr) Dispositif a semi-conducteurs comportant un contact rapporte a faible resistance
FR2589278A1 (fr) Dispositif electronique pour proteger des circuits integres des charges electrostatiques et procede pour le fabriquer
EP0059206B1 (fr) Circuit imprime et son procede de fabrication
FR2511539A1 (fr) Dispositif de memoire remanente
FR2549274A1 (fr) Cellule de memoire vive dynamique a rendement eleve et procede de fabrication
FR2525011A1 (fr) Memoire de lecture programmable et son procede de fabrication
EP0186567B1 (fr) Diac à électrodes coplanaires
EP0298829B1 (fr) Procédé de commande de l'état de conduction d'un transistor MOS
FR2495379A1 (fr) Circuit integre a semiconducteurs et procede de fabrication de ce dernier
FR3029215A1 (fr) Fil textile photovoltaique

Legal Events

Date Code Title Description
ST Notification of lapse