FR2478879A1 - Procede de realisation de dispositifs a effet memoire a semi-conducteurs amorphes - Google Patents

Procede de realisation de dispositifs a effet memoire a semi-conducteurs amorphes Download PDF

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Publication number
FR2478879A1
FR2478879A1 FR8006480A FR8006480A FR2478879A1 FR 2478879 A1 FR2478879 A1 FR 2478879A1 FR 8006480 A FR8006480 A FR 8006480A FR 8006480 A FR8006480 A FR 8006480A FR 2478879 A1 FR2478879 A1 FR 2478879A1
Authority
FR
France
Prior art keywords
layer
compound
constituting
electrodes
amorphous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8006480A
Other languages
English (en)
French (fr)
Other versions
FR2478879B1 (enExample
Inventor
Pierre Kumurdjian
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR8006480A priority Critical patent/FR2478879A1/fr
Priority to EP81400378A priority patent/EP0036802B1/fr
Priority to DE8181400378T priority patent/DE3165324D1/de
Priority to US06/244,608 priority patent/US4366614A/en
Priority to JP4224181A priority patent/JPS56147493A/ja
Publication of FR2478879A1 publication Critical patent/FR2478879A1/fr
Application granted granted Critical
Publication of FR2478879B1 publication Critical patent/FR2478879B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/084—Ion implantation of compound devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/90—Bulk effect device making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/93—Ternary or quaternary semiconductor comprised of elements from three different groups, e.g. I-III-V

Landscapes

  • Semiconductor Memories (AREA)
  • Bipolar Transistors (AREA)
FR8006480A 1980-03-24 1980-03-24 Procede de realisation de dispositifs a effet memoire a semi-conducteurs amorphes Granted FR2478879A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR8006480A FR2478879A1 (fr) 1980-03-24 1980-03-24 Procede de realisation de dispositifs a effet memoire a semi-conducteurs amorphes
EP81400378A EP0036802B1 (fr) 1980-03-24 1981-03-11 Procédé de réalisation de dispositifs à effet mémoire à semi-conducteurs amorphes
DE8181400378T DE3165324D1 (en) 1980-03-24 1981-03-11 Method of manufacturing amorphous semiconductor memory devices
US06/244,608 US4366614A (en) 1980-03-24 1981-03-17 Method for constructing devices with a storage action and having amorphous semiconductors
JP4224181A JPS56147493A (en) 1980-03-24 1981-03-23 Method of manufacturing amorphous semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8006480A FR2478879A1 (fr) 1980-03-24 1980-03-24 Procede de realisation de dispositifs a effet memoire a semi-conducteurs amorphes

Publications (2)

Publication Number Publication Date
FR2478879A1 true FR2478879A1 (fr) 1981-09-25
FR2478879B1 FR2478879B1 (enExample) 1983-10-14

Family

ID=9240006

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8006480A Granted FR2478879A1 (fr) 1980-03-24 1980-03-24 Procede de realisation de dispositifs a effet memoire a semi-conducteurs amorphes

Country Status (5)

Country Link
US (1) US4366614A (enExample)
EP (1) EP0036802B1 (enExample)
JP (1) JPS56147493A (enExample)
DE (1) DE3165324D1 (enExample)
FR (1) FR2478879A1 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4433342A (en) * 1981-04-06 1984-02-21 Harris Corporation Amorphous switching device with residual crystallization retardation
FR2533072B1 (fr) * 1982-09-14 1986-07-18 Coissard Pierre Procede de fabrication de circuits electroniques a base de transistors en couches minces et de condensateurs
US4677742A (en) * 1983-01-18 1987-07-07 Energy Conversion Devices, Inc. Electronic matrix arrays and method for making the same
US4545111A (en) * 1983-01-18 1985-10-08 Energy Conversion Devices, Inc. Method for making, parallel preprogramming or field programming of electronic matrix arrays
US4847732A (en) * 1983-09-15 1989-07-11 Mosaic Systems, Inc. Wafer and method of making same
DE3586450T2 (de) * 1984-02-21 1993-03-18 Environmental Res Inst Kapazitive vorrichtung.
US4845533A (en) * 1986-08-22 1989-07-04 Energy Conversion Devices, Inc. Thin film electrical devices with amorphous carbon electrodes and method of making same
KR910019241A (ko) * 1990-04-30 1991-11-30 리챠드 데이빗 라우만 안티퓨즈를 갖는 집적회로
AUPO613797A0 (en) * 1997-04-09 1997-05-08 University Of Sydney, The Digital information storage
DE10023116B4 (de) * 2000-05-11 2005-12-15 Infineon Technologies Ag Feldeffekttransistor-Struktur mit isoliertem Gate
US7381611B2 (en) * 2003-08-04 2008-06-03 Intel Corporation Multilayered phase change memory
US7482616B2 (en) * 2004-05-27 2009-01-27 Samsung Electronics Co., Ltd. Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same
DE102005025209B4 (de) * 2004-05-27 2011-01-13 Samsung Electronics Co., Ltd., Suwon Halbleiterspeicherbauelement, elektronisches System und Verfahren zur Herstellung eines Halbleiterspeicherbauelements
US7411208B2 (en) * 2004-05-27 2008-08-12 Samsung Electronics Co., Ltd. Phase-change memory device having a barrier layer and manufacturing method
US20050263801A1 (en) * 2004-05-27 2005-12-01 Jae-Hyun Park Phase-change memory device having a barrier layer and manufacturing method
US7835170B2 (en) 2005-05-09 2010-11-16 Nantero, Inc. Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks
WO2008021900A2 (en) * 2006-08-08 2008-02-21 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
WO2009115995A1 (en) * 2008-03-21 2009-09-24 Nxp B.V. An electronic component comprising a convertible structure
US9263126B1 (en) 2010-09-01 2016-02-16 Nantero Inc. Method for dynamically accessing and programming resistive change element arrays
US8377741B2 (en) * 2008-12-30 2013-02-19 Stmicroelectronics S.R.L. Self-heating phase change memory cell architecture

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2389239A2 (fr) * 1977-04-27 1978-11-24 Commissariat Energie Atomique Procede de realisation de dispositifs semiconducteurs amorphes et dispositifs en faisant application
FR2407572A1 (fr) * 1977-10-31 1979-05-25 Burroughs Corp Composant de memoire, amorphe, pour memoire morte

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3675090A (en) * 1968-11-04 1972-07-04 Energy Conversion Devices Inc Film deposited semiconductor devices
US3619732A (en) * 1969-05-16 1971-11-09 Energy Conversion Devices Inc Coplanar semiconductor switch structure
US3611063A (en) * 1969-05-16 1971-10-05 Energy Conversion Devices Inc Amorphous electrode or electrode surface
US3886577A (en) * 1973-09-12 1975-05-27 Energy Conversion Devices Inc Filament-type memory semiconductor device and method of making the same
US4167806A (en) * 1976-09-28 1979-09-18 Commissariat A L'energie Atomique Method of fabrication of an amorphous semiconductor device on a substrate

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2389239A2 (fr) * 1977-04-27 1978-11-24 Commissariat Energie Atomique Procede de realisation de dispositifs semiconducteurs amorphes et dispositifs en faisant application
FR2407572A1 (fr) * 1977-10-31 1979-05-25 Burroughs Corp Composant de memoire, amorphe, pour memoire morte

Also Published As

Publication number Publication date
US4366614A (en) 1983-01-04
JPS56147493A (en) 1981-11-16
EP0036802A1 (fr) 1981-09-30
DE3165324D1 (en) 1984-09-13
FR2478879B1 (enExample) 1983-10-14
EP0036802B1 (fr) 1984-08-08

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