FR2460040A1 - Procede pour realiser une diode schottky a tenue en tension amelioree - Google Patents
Procede pour realiser une diode schottky a tenue en tension amelioree Download PDFInfo
- Publication number
- FR2460040A1 FR2460040A1 FR7916056A FR7916056A FR2460040A1 FR 2460040 A1 FR2460040 A1 FR 2460040A1 FR 7916056 A FR7916056 A FR 7916056A FR 7916056 A FR7916056 A FR 7916056A FR 2460040 A1 FR2460040 A1 FR 2460040A1
- Authority
- FR
- France
- Prior art keywords
- layer
- doping
- metal
- schottky
- epitaxial layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 14
- 238000002513 implantation Methods 0.000 claims abstract description 5
- 230000008569 process Effects 0.000 claims abstract description 5
- 230000004048 modification Effects 0.000 claims abstract description 4
- 238000012986 modification Methods 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims abstract description 3
- 239000002184 metal Substances 0.000 claims description 20
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- 230000004888 barrier function Effects 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- -1 boron ions Chemical class 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 2
- 229910052906 cristobalite Inorganic materials 0.000 claims description 2
- 239000012535 impurity Substances 0.000 claims description 2
- 230000000873 masking effect Effects 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 229910052682 stishovite Inorganic materials 0.000 claims description 2
- 229910052905 tridymite Inorganic materials 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims 1
- 238000005468 ion implantation Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 238000001514 detection method Methods 0.000 abstract description 2
- 230000003071 parasitic effect Effects 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000000779 depleting effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/60—Schottky-barrier diodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/018—Compensation doping
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/139—Schottky barrier
Landscapes
- Electrodes Of Semiconductors (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7916056A FR2460040A1 (fr) | 1979-06-22 | 1979-06-22 | Procede pour realiser une diode schottky a tenue en tension amelioree |
| EP80400625A EP0021869B1 (fr) | 1979-06-22 | 1980-05-08 | Procédé pour réaliser une diode Schottky à tenue en tension améliorée |
| DE8080400625T DE3063587D1 (en) | 1979-06-22 | 1980-05-08 | Method of making a schottky diode with improved voltage properties |
| US06/161,571 US4310362A (en) | 1979-06-22 | 1980-06-20 | Method of making Schottky diode with an improved voltage behavior |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7916056A FR2460040A1 (fr) | 1979-06-22 | 1979-06-22 | Procede pour realiser une diode schottky a tenue en tension amelioree |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2460040A1 true FR2460040A1 (fr) | 1981-01-16 |
| FR2460040B1 FR2460040B1 (Direct) | 1983-01-07 |
Family
ID=9226970
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7916056A Granted FR2460040A1 (fr) | 1979-06-22 | 1979-06-22 | Procede pour realiser une diode schottky a tenue en tension amelioree |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4310362A (Direct) |
| EP (1) | EP0021869B1 (Direct) |
| DE (1) | DE3063587D1 (Direct) |
| FR (1) | FR2460040A1 (Direct) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3124572A1 (de) * | 1981-06-23 | 1982-12-30 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur herstellung von schottky-dioden |
| IT1171402B (it) * | 1981-07-20 | 1987-06-10 | Selenia Ind Eletroniche Associ | Transistor ad effeto di campo a barriera metallo-semiconduttorre conzona svuotata modificata |
| DE3219598A1 (de) * | 1982-05-25 | 1983-12-01 | Siemens AG, 1000 Berlin und 8000 München | Schottky-leistungsdiode |
| US4638551A (en) * | 1982-09-24 | 1987-01-27 | General Instrument Corporation | Schottky barrier device and method of manufacture |
| JPS59232467A (ja) * | 1983-06-16 | 1984-12-27 | Toshiba Corp | ガ−ドリング付きシヨツトキ−バリヤ−ダイオ−ド |
| US4622736A (en) * | 1984-01-30 | 1986-11-18 | Tektronix, Inc. | Schottky barrier diodes |
| US4742377A (en) * | 1985-02-21 | 1988-05-03 | General Instrument Corporation | Schottky barrier device with doped composite guard ring |
| KR880014692A (ko) * | 1987-05-30 | 1988-12-24 | 강진구 | 반사경이 부착된 반도체 발광장치 |
| US4874714A (en) * | 1988-06-02 | 1989-10-17 | Texas Instruments Incorporated | Method of making laterally oriented Schottky diode |
| US4954864A (en) * | 1988-12-13 | 1990-09-04 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Millimeter-wave monolithic diode-grid frequency multiplier |
| DE69433738T2 (de) * | 1993-09-07 | 2005-03-17 | Murata Mfg. Co., Ltd., Nagaokakyo | Halbleiterelement und Verfahren zur Herstellung desselben |
| DE19526739C3 (de) * | 1995-07-21 | 2001-03-29 | Gen Semiconductor Ireland Macr | Halbleiterbauelement |
| JPH0964381A (ja) * | 1995-08-25 | 1997-03-07 | Murata Mfg Co Ltd | ショットキーバリアダイオード |
| US5763918A (en) * | 1996-10-22 | 1998-06-09 | International Business Machines Corp. | ESD structure that employs a schottky-barrier to reduce the likelihood of latch-up |
| SE9700156D0 (sv) * | 1997-01-21 | 1997-01-21 | Abb Research Ltd | Junction termination for Si C Schottky diode |
| JP3287269B2 (ja) | 1997-06-02 | 2002-06-04 | 富士電機株式会社 | ダイオードとその製造方法 |
| EP0935816B1 (en) * | 1997-09-03 | 2006-04-05 | Koninklijke Philips Electronics N.V. | Method of manufacturing a semiconductor device with a schottky junction |
| US6261932B1 (en) | 1999-07-29 | 2001-07-17 | Fairchild Semiconductor Corp. | Method of fabricating Schottky diode and related structure |
| US6699775B2 (en) * | 2000-02-22 | 2004-03-02 | International Rectifier Corporation | Manufacturing process for fast recovery diode |
| FR2832547A1 (fr) * | 2001-11-21 | 2003-05-23 | St Microelectronics Sa | Procede de realisation d'une diode schottky sur substrat de carbure de silicium |
| US8901699B2 (en) | 2005-05-11 | 2014-12-02 | Cree, Inc. | Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection |
| US10304971B2 (en) * | 2016-07-16 | 2019-05-28 | Champion Microelectronic Corp. | High speed Schottky rectifier |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2452209A1 (de) * | 1973-12-05 | 1975-07-17 | Inst De Cercetari Pentru Compo | Metall-halbleiterdiode |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3541403A (en) * | 1967-10-19 | 1970-11-17 | Bell Telephone Labor Inc | Guard ring for schottky barrier devices |
| IT985052B (it) * | 1973-05-25 | 1974-11-30 | Finike Italiana Marposs | Metodo e relativa apparecchiatura per il controllo della rotazione di pezzi meccanici in lavorazione su rettificatrici |
| JPS51120674A (en) * | 1975-04-16 | 1976-10-22 | Hitachi Ltd | Semiconductor device |
| US4096622A (en) * | 1975-07-31 | 1978-06-27 | General Motors Corporation | Ion implanted Schottky barrier diode |
| GB1573309A (en) * | 1976-03-24 | 1980-08-20 | Mullard Ltd | Semiconductor devices and their manufacture |
| US4110775A (en) * | 1976-08-23 | 1978-08-29 | Festa Thomas A | Schottky diode with voltage limiting guard band |
| US4063964A (en) * | 1976-12-27 | 1977-12-20 | International Business Machines Corporation | Method for forming a self-aligned schottky barrier device guardring |
| US4202002A (en) * | 1977-01-19 | 1980-05-06 | International Business Machines Corporation | Ion-implanted layers with abrupt edges |
| US4149905A (en) * | 1977-12-27 | 1979-04-17 | Bell Telephone Laboratories, Incorporated | Method of limiting stacking faults in oxidized silicon wafers |
-
1979
- 1979-06-22 FR FR7916056A patent/FR2460040A1/fr active Granted
-
1980
- 1980-05-08 EP EP80400625A patent/EP0021869B1/fr not_active Expired
- 1980-05-08 DE DE8080400625T patent/DE3063587D1/de not_active Expired
- 1980-06-20 US US06/161,571 patent/US4310362A/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2452209A1 (de) * | 1973-12-05 | 1975-07-17 | Inst De Cercetari Pentru Compo | Metall-halbleiterdiode |
Non-Patent Citations (1)
| Title |
|---|
| EXBK/77 * |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0021869B1 (fr) | 1983-06-01 |
| DE3063587D1 (en) | 1983-07-07 |
| EP0021869A1 (fr) | 1981-01-07 |
| US4310362A (en) | 1982-01-12 |
| FR2460040B1 (Direct) | 1983-01-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |