FR2456793A1 - Procede d'obtention d'arseniure de gallium monocristallin semi-isolant a faible taux de dislocations et materiau obtenu par la mise en oeuvre de ce procede - Google Patents

Procede d'obtention d'arseniure de gallium monocristallin semi-isolant a faible taux de dislocations et materiau obtenu par la mise en oeuvre de ce procede

Info

Publication number
FR2456793A1
FR2456793A1 FR7912731A FR7912731A FR2456793A1 FR 2456793 A1 FR2456793 A1 FR 2456793A1 FR 7912731 A FR7912731 A FR 7912731A FR 7912731 A FR7912731 A FR 7912731A FR 2456793 A1 FR2456793 A1 FR 2456793A1
Authority
FR
France
Prior art keywords
semi
unavoidable impurities
mfr
aluminium
addition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7912731A
Other languages
English (en)
Other versions
FR2456793B1 (fr
Inventor
Gerard Poiblaud
Michel Kleinhans
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7912731A priority Critical patent/FR2456793A1/fr
Publication of FR2456793A1 publication Critical patent/FR2456793A1/fr
Application granted granted Critical
Publication of FR2456793B1 publication Critical patent/FR2456793B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/06—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1.PROCEDE D'OBTENTION D'ARSENIURE DE GALLIUM SEMI-ISOLANT, PAR SYNTHESE, PUIS CRISTALLISATION. 2.PROCEDE CARACTERISE EN CE QUE, AVANT LA SYNTHESE, IL EST AJOUTE DE L'ALUMINIUM DANS LE GALLIUM LIQUIDE, EN PLUS DE L'ELEMENT CHOISI COMME AGENT COMPENSATEUR. 3.APPLICATION A LA FABRICATION DE SUBSTRATS PARTICULIEREMENT APPROPRIES POUR LES DISPOSITIFS SEMI-CONDUCTEURS OPTO-ELECTRONIQUES.
FR7912731A 1979-05-18 1979-05-18 Procede d'obtention d'arseniure de gallium monocristallin semi-isolant a faible taux de dislocations et materiau obtenu par la mise en oeuvre de ce procede Granted FR2456793A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7912731A FR2456793A1 (fr) 1979-05-18 1979-05-18 Procede d'obtention d'arseniure de gallium monocristallin semi-isolant a faible taux de dislocations et materiau obtenu par la mise en oeuvre de ce procede

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7912731A FR2456793A1 (fr) 1979-05-18 1979-05-18 Procede d'obtention d'arseniure de gallium monocristallin semi-isolant a faible taux de dislocations et materiau obtenu par la mise en oeuvre de ce procede

Publications (2)

Publication Number Publication Date
FR2456793A1 true FR2456793A1 (fr) 1980-12-12
FR2456793B1 FR2456793B1 (fr) 1985-04-19

Family

ID=9225648

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7912731A Granted FR2456793A1 (fr) 1979-05-18 1979-05-18 Procede d'obtention d'arseniure de gallium monocristallin semi-isolant a faible taux de dislocations et materiau obtenu par la mise en oeuvre de ce procede

Country Status (1)

Country Link
FR (1) FR2456793A1 (fr)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1409116A (fr) * 1963-09-25 1965-08-20 Texas Instruments Inc Arséniure de gallium à forte résistivité et procédé de fabrication de ce corps

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1409116A (fr) * 1963-09-25 1965-08-20 Texas Instruments Inc Arséniure de gallium à forte résistivité et procédé de fabrication de ce corps

Also Published As

Publication number Publication date
FR2456793B1 (fr) 1985-04-19

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Legal Events

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ST Notification of lapse