FR2452179A1 - Circuit integre a semi-conducteurs a haut degre d'integration - Google Patents

Circuit integre a semi-conducteurs a haut degre d'integration

Info

Publication number
FR2452179A1
FR2452179A1 FR8006244A FR8006244A FR2452179A1 FR 2452179 A1 FR2452179 A1 FR 2452179A1 FR 8006244 A FR8006244 A FR 8006244A FR 8006244 A FR8006244 A FR 8006244A FR 2452179 A1 FR2452179 A1 FR 2452179A1
Authority
FR
France
Prior art keywords
layer
conductivity
type
diffusion
conductive substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8006244A
Other languages
English (en)
Other versions
FR2452179B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of FR2452179A1 publication Critical patent/FR2452179A1/fr
Application granted granted Critical
Publication of FR2452179B1 publication Critical patent/FR2452179B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0761—Vertical bipolar transistor in combination with diodes only
    • H01L27/0766—Vertical bipolar transistor in combination with diodes only with Schottky diodes only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
    • H01L27/0722—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with lateral bipolar transistors and diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

CIRCUIT INTEGRE A SEMI-CONDUCTEURS A HAUT DEGRE D'INTEGRATION. LE CIRCUIT INTEGRE A SEMI-CONDUCTEURS SELON LA PRESENTE INVENTION COMPREND UN ELEMENT SEMI-CONDUCTEUR A FORTE TENSION DE CLAQUAGE ET UNE DIODE A BARRIERE SCHOTTKY MUNIE D'UN ANNEAU DE PROTECTION, CET ELEMENT ET CETTE DIODE ETANT ASSEMBLES DANS UN SUBSTRAT SEMI-CONDUCTEUR 40 D'UN PREMIER TYPE DE CONDUCTIVITE, LE CIRCUIT COMPRENANT AU MOINS UNE PREMIERE COUCHE DE DIFFUSION 41 A FAIBLE CONCENTRATION D'IMPURETE D'UN SECOND TYPE DE CONDUCTIVITE OPPOSE AU PREMIER TYPE DE CONDUCTIVITE ET AU MOINS UNE SECONDE COUCHE 47 A FORTE CONCENTRATION D'IMPURETE DU SECOND TYPE DE CONDUCTIVITE FORMEE DE FACON MOINS PROFONDE QUE LADITE PREMIERE COUCHE DE DIFFUSION, LESDITES PREMIERE ET SECONDE COUCHES DE DIFFUSION ETANT COUPLEES PARTIELLEMENT L'UNE A L'AUTRE A L'INTERIEUR DUDIT SUBSTRAT CONDUCTEUR, LADITE PREMIERE COUCHE DE DIFFUSION SERVANT DE COUCHE FORMANT L'ELEMENT SEMI-CONDUCTEUR A FORTE TENSION DE CLAQUAGE ET LADITE SECONDE COUCHE DE DIFFUSION SERVANT A LA FOIS DE CONTACT OHMIQUE POUR LADITE PREMIERE COUCHE DE DIFFUSION ET D'ANNEAU DE PROTECTION DE LA DIODE A BARRIERE SCHOTTKY.
FR8006244A 1979-03-22 1980-03-20 Circuit integre a semi-conducteurs a haut degre d'integration Granted FR2452179A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3228579A JPS55125663A (en) 1979-03-22 1979-03-22 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
FR2452179A1 true FR2452179A1 (fr) 1980-10-17
FR2452179B1 FR2452179B1 (fr) 1985-03-08

Family

ID=12354684

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8006244A Granted FR2452179A1 (fr) 1979-03-22 1980-03-20 Circuit integre a semi-conducteurs a haut degre d'integration

Country Status (7)

Country Link
US (1) US4380021A (fr)
JP (1) JPS55125663A (fr)
BE (1) BE882373A (fr)
CA (1) CA1130472A (fr)
DE (1) DE3010986A1 (fr)
FR (1) FR2452179A1 (fr)
GB (1) GB2049275B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0075678A2 (fr) * 1981-07-31 1983-04-06 Kabushiki Kaisha Toshiba Dispositif semi-conducteur à diode Schottky

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4489341A (en) * 1982-09-27 1984-12-18 Sprague Electric Company Merged-transistor switch with extra P-type region
JPS60137453U (ja) * 1984-02-23 1985-09-11 関西日本電気株式会社 半導体装置
JPH01147149U (fr) * 1988-03-23 1989-10-11
US4871686A (en) * 1988-03-28 1989-10-03 Motorola, Inc. Integrated Schottky diode and transistor
US5982012A (en) * 1998-01-14 1999-11-09 Foveon, Inc. Pixel cells and pixel cell arrays having low leakage and improved performance characteristics
TW451423B (en) * 2000-02-01 2001-08-21 Ind Tech Res Inst Latch-up structure for improving CMOS processing using latch-up ion implantation and the manufacturing method thereof
US6657273B2 (en) * 2001-06-12 2003-12-02 International Rectifirer Corporation Termination for high voltage schottky diode
US7129558B2 (en) 2002-11-06 2006-10-31 International Rectifier Corporation Chip-scale schottky device
JP2014225483A (ja) * 2011-09-16 2014-12-04 パナソニック株式会社 半導体集積回路装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2028085A7 (fr) * 1969-01-10 1970-10-09 Fairchild Camera Instr Co
FR2110331A1 (fr) * 1970-10-09 1972-06-02 Licentia Gmbh
US3737742A (en) * 1971-09-30 1973-06-05 Trw Inc Monolithic bi-polar semiconductor device employing cermet for both schottky barrier and ohmic contact

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3909837A (en) * 1968-12-31 1975-09-30 Texas Instruments Inc High-speed transistor with rectifying contact connected between base and collector
US3571674A (en) * 1969-01-10 1971-03-23 Fairchild Camera Instr Co Fast switching pnp transistor
US3623029A (en) * 1969-12-15 1971-11-23 Ibm Bistable multiemitter silicon-controlled rectifier storage cell
JPS568501B2 (fr) * 1973-05-12 1981-02-24
US3943554A (en) * 1973-07-30 1976-03-09 Signetics Corporation Threshold switching integrated circuit and method for forming the same
JPS51126761A (en) * 1975-04-25 1976-11-05 Sony Corp Schottky barrier type semi-conductor unit
US4119446A (en) * 1977-08-11 1978-10-10 Motorola Inc. Method for forming a guarded Schottky barrier diode by ion-implantation
US4199860A (en) * 1977-11-11 1980-04-29 Rca Corporation Method of integrating semiconductor components

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2028085A7 (fr) * 1969-01-10 1970-10-09 Fairchild Camera Instr Co
FR2110331A1 (fr) * 1970-10-09 1972-06-02 Licentia Gmbh
US3737742A (en) * 1971-09-30 1973-06-05 Trw Inc Monolithic bi-polar semiconductor device employing cermet for both schottky barrier and ohmic contact

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/69 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0075678A2 (fr) * 1981-07-31 1983-04-06 Kabushiki Kaisha Toshiba Dispositif semi-conducteur à diode Schottky
EP0075678A3 (en) * 1981-07-31 1985-05-15 Kabushiki Kaisha Toshiba Semiconductor device having a schottky diode

Also Published As

Publication number Publication date
BE882373A (fr) 1980-07-16
GB2049275A (en) 1980-12-17
CA1130472A (fr) 1982-08-24
DE3010986A1 (de) 1980-10-09
JPS622461B2 (fr) 1987-01-20
FR2452179B1 (fr) 1985-03-08
JPS55125663A (en) 1980-09-27
GB2049275B (en) 1983-07-20
US4380021A (en) 1983-04-12

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