FR2451634A1 - Resistance de charge pour hyperfrequence, procede de fabrication et circuit d'utilisation d'une telle resistance - Google Patents

Resistance de charge pour hyperfrequence, procede de fabrication et circuit d'utilisation d'une telle resistance

Info

Publication number
FR2451634A1
FR2451634A1 FR7906743A FR7906743A FR2451634A1 FR 2451634 A1 FR2451634 A1 FR 2451634A1 FR 7906743 A FR7906743 A FR 7906743A FR 7906743 A FR7906743 A FR 7906743A FR 2451634 A1 FR2451634 A1 FR 2451634A1
Authority
FR
France
Prior art keywords
circuit
doped semiconductor
load resistance
semiconductor mesa
readily integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7906743A
Other languages
English (en)
French (fr)
Other versions
FR2451634B1 (enExample
Inventor
Michel Calligaro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7906743A priority Critical patent/FR2451634A1/fr
Publication of FR2451634A1 publication Critical patent/FR2451634A1/fr
Application granted granted Critical
Publication of FR2451634B1 publication Critical patent/FR2451634B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/43—Resistors having PN junctions

Landscapes

  • Bipolar Transistors (AREA)
FR7906743A 1979-03-16 1979-03-16 Resistance de charge pour hyperfrequence, procede de fabrication et circuit d'utilisation d'une telle resistance Granted FR2451634A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7906743A FR2451634A1 (fr) 1979-03-16 1979-03-16 Resistance de charge pour hyperfrequence, procede de fabrication et circuit d'utilisation d'une telle resistance

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7906743A FR2451634A1 (fr) 1979-03-16 1979-03-16 Resistance de charge pour hyperfrequence, procede de fabrication et circuit d'utilisation d'une telle resistance

Publications (2)

Publication Number Publication Date
FR2451634A1 true FR2451634A1 (fr) 1980-10-10
FR2451634B1 FR2451634B1 (enExample) 1982-05-14

Family

ID=9223211

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7906743A Granted FR2451634A1 (fr) 1979-03-16 1979-03-16 Resistance de charge pour hyperfrequence, procede de fabrication et circuit d'utilisation d'une telle resistance

Country Status (1)

Country Link
FR (1) FR2451634A1 (enExample)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3372070A (en) * 1965-07-30 1968-03-05 Bell Telephone Labor Inc Fabrication of semiconductor integrated devices with a pn junction running through the wafer
DE2338612A1 (de) * 1972-07-31 1974-02-21 Texas Instruments Inc Halbleitervorrichtung und verfahren zu ihrer herstellung
FR2374744A1 (fr) * 1976-12-17 1978-07-13 Thomson Csf Diode a capacite variable du type " hyperabrupt ", et procede de fabrication d'une telle diode

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3372070A (en) * 1965-07-30 1968-03-05 Bell Telephone Labor Inc Fabrication of semiconductor integrated devices with a pn junction running through the wafer
DE2338612A1 (de) * 1972-07-31 1974-02-21 Texas Instruments Inc Halbleitervorrichtung und verfahren zu ihrer herstellung
FR2374744A1 (fr) * 1976-12-17 1978-07-13 Thomson Csf Diode a capacite variable du type " hyperabrupt ", et procede de fabrication d'une telle diode

Also Published As

Publication number Publication date
FR2451634B1 (enExample) 1982-05-14

Similar Documents

Publication Publication Date Title
US4409608A (en) Recessed interdigitated integrated capacitor
US2954486A (en) Semiconductor resistance element
KR940006179A (ko) 반도체 장치와 그 제작방법
KR920013780A (ko) 고전압 용도에 적합한 직접 회로 장치
KR890003038A (ko) 페데스탈 구조를 가지는 반도체 제조 공정
FR2434485A1 (fr) Configuration de contact enfoui pour circuits integres cmos/sos
KR970011977A (ko) 액티브 매트릭스형 액정 표시 장치 및 그 제조 방법
JPH0365016B2 (enExample)
JPS6435935A (en) Superconducting monolithic microwave integrated circuit
KR940018982A (ko) 캐패시터를 갖는 반도체 디바이스
WO1996013858A3 (en) Integrated microwave semiconductor device with active and passive components
KR950004608A (ko) 프로그램가능한 안티-퓨즈 소자(Antifuse element) 및 그 제조방법
KR900005602A (ko) 반도체장치 및 그 제조방법
FR2451634A1 (fr) Resistance de charge pour hyperfrequence, procede de fabrication et circuit d'utilisation d'une telle resistance
KR900017129A (ko) 반도체 소자용 배면 금속화 스킴(scheme) 및 그의 제조 방법
US4857975A (en) GaAs field effect transistor having a WSi Schottky gate electrode improved for high-speed operation
US3855613A (en) A solid state switch using an improved junction field effect transistor
KR910003783A (ko) 반도체장치 및 그 제조방법
US3631313A (en) Resistor for integrated circuit
US4727404A (en) Field effect transistor of the MESFET type for high frequency applications and method of manufacturing such a transistor
KR900702571A (ko) 반도체 장치 및 반도체 기억장치
KR940002769B1 (ko) 오버래핑하는 도전층을 갖는 반도체 장치와 그 제조방법
US3669732A (en) Procedure for making semiconductor devices of small dimensions
KR910017656A (ko) 반도체장치
KR960043124A (ko) 층간 절연막에 형성된 기체 절연층을 갖는 반도체 장치 및 그 제조 방법

Legal Events

Date Code Title Description
ST Notification of lapse