FR2447609A1 - Encapsulated semiconductor diode mfr. - includes forming metallised surface around dielectric enabling operation at 30 ghz range - Google Patents

Encapsulated semiconductor diode mfr. - includes forming metallised surface around dielectric enabling operation at 30 ghz range

Info

Publication number
FR2447609A1
FR2447609A1 FR7902099A FR7902099A FR2447609A1 FR 2447609 A1 FR2447609 A1 FR 2447609A1 FR 7902099 A FR7902099 A FR 7902099A FR 7902099 A FR7902099 A FR 7902099A FR 2447609 A1 FR2447609 A1 FR 2447609A1
Authority
FR
France
Prior art keywords
diode
mfr
includes forming
surface around
semiconductor diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7902099A
Other languages
French (fr)
Other versions
FR2447609B1 (en
Inventor
Raymond Henry
Jacques Simon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7902099A priority Critical patent/FR2447609A1/en
Publication of FR2447609A1 publication Critical patent/FR2447609A1/en
Application granted granted Critical
Publication of FR2447609B1 publication Critical patent/FR2447609B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01049—Indium [In]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01058—Cerium [Ce]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Waveguide Connection Structure (AREA)

Abstract

In the process for forming an encapsulated diode for use at high frequencies, the diode is electrically and thermally connected by one of its faces to a metal support. The diode is surrounded by a ring of dielectric material soldered to the support. The dielectric ring has two plane surfaces which are coated with metal. In the course of the construction of the diode, a metallic sleeve is inserted into the ring of dielectric material in order to ensure an electric connection. The electrical connection is thus established between the diode and the metallic surface of the dielectric ring opposite the support. A soldered connection is then formed between this surface and the metallic sleeve. The dielectric material may be formed by a section of glass fiber.
FR7902099A 1979-01-26 1979-01-26 Encapsulated semiconductor diode mfr. - includes forming metallised surface around dielectric enabling operation at 30 ghz range Granted FR2447609A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7902099A FR2447609A1 (en) 1979-01-26 1979-01-26 Encapsulated semiconductor diode mfr. - includes forming metallised surface around dielectric enabling operation at 30 ghz range

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7902099A FR2447609A1 (en) 1979-01-26 1979-01-26 Encapsulated semiconductor diode mfr. - includes forming metallised surface around dielectric enabling operation at 30 ghz range

Publications (2)

Publication Number Publication Date
FR2447609A1 true FR2447609A1 (en) 1980-08-22
FR2447609B1 FR2447609B1 (en) 1982-05-14

Family

ID=9221266

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7902099A Granted FR2447609A1 (en) 1979-01-26 1979-01-26 Encapsulated semiconductor diode mfr. - includes forming metallised surface around dielectric enabling operation at 30 ghz range

Country Status (1)

Country Link
FR (1) FR2447609A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0046107A1 (en) * 1980-08-08 1982-02-17 Thomson-Csf Semiconductor device utilizable at very high frequencies, and method of making the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2277459A1 (en) * 1974-07-05 1976-01-30 Mitsubishi Electric Corp HIGH FREQUENCY SEMICONDUCTOR

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2277459A1 (en) * 1974-07-05 1976-01-30 Mitsubishi Electric Corp HIGH FREQUENCY SEMICONDUCTOR

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0046107A1 (en) * 1980-08-08 1982-02-17 Thomson-Csf Semiconductor device utilizable at very high frequencies, and method of making the same

Also Published As

Publication number Publication date
FR2447609B1 (en) 1982-05-14

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Legal Events

Date Code Title Description
ST Notification of lapse