FR2277459A1 - HIGH FREQUENCY SEMICONDUCTOR - Google Patents

HIGH FREQUENCY SEMICONDUCTOR

Info

Publication number
FR2277459A1
FR2277459A1 FR7521119A FR7521119A FR2277459A1 FR 2277459 A1 FR2277459 A1 FR 2277459A1 FR 7521119 A FR7521119 A FR 7521119A FR 7521119 A FR7521119 A FR 7521119A FR 2277459 A1 FR2277459 A1 FR 2277459A1
Authority
FR
France
Prior art keywords
high frequency
frequency semiconductor
semiconductor
frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7521119A
Other languages
French (fr)
Other versions
FR2277459B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP7760274A external-priority patent/JPS516673A/en
Priority claimed from JP10516174A external-priority patent/JPS5132175A/en
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2277459A1 publication Critical patent/FR2277459A1/en
Application granted granted Critical
Publication of FR2277459B1 publication Critical patent/FR2277459B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
    • H03B7/02—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance
    • H03B7/06—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device
FR7521119A 1974-07-05 1975-07-04 HIGH FREQUENCY SEMICONDUCTOR Granted FR2277459A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7760274A JPS516673A (en) 1974-07-05 1974-07-05 KOSHUHAHANDOTAISOCHI
JP10516174A JPS5132175A (en) 1974-09-12 1974-09-12 KOSHUHAHANDOTAISOCHI

Publications (2)

Publication Number Publication Date
FR2277459A1 true FR2277459A1 (en) 1976-01-30
FR2277459B1 FR2277459B1 (en) 1978-12-22

Family

ID=26418674

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7521119A Granted FR2277459A1 (en) 1974-07-05 1975-07-04 HIGH FREQUENCY SEMICONDUCTOR

Country Status (2)

Country Link
FR (1) FR2277459A1 (en)
GB (1) GB1494248A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2447609A1 (en) * 1979-01-26 1980-08-22 Thomson Csf Encapsulated semiconductor diode mfr. - includes forming metallised surface around dielectric enabling operation at 30 ghz range
FR2488444A1 (en) * 1980-08-08 1982-02-12 Thomson Csf SEMICONDUCTOR DEVICE USABLE IN HIGH FREQUENCY AND METHOD FOR MANUFACTURING THE SAME

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2447609A1 (en) * 1979-01-26 1980-08-22 Thomson Csf Encapsulated semiconductor diode mfr. - includes forming metallised surface around dielectric enabling operation at 30 ghz range
FR2488444A1 (en) * 1980-08-08 1982-02-12 Thomson Csf SEMICONDUCTOR DEVICE USABLE IN HIGH FREQUENCY AND METHOD FOR MANUFACTURING THE SAME
EP0046107A1 (en) * 1980-08-08 1982-02-17 Thomson-Csf Semiconductor device utilizable at very high frequencies, and method of making the same

Also Published As

Publication number Publication date
FR2277459B1 (en) 1978-12-22
GB1494248A (en) 1977-12-07

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Legal Events

Date Code Title Description
ST Notification of lapse