FR2446011B3 - - Google Patents
Info
- Publication number
- FR2446011B3 FR2446011B3 FR8000237A FR8000237A FR2446011B3 FR 2446011 B3 FR2446011 B3 FR 2446011B3 FR 8000237 A FR8000237 A FR 8000237A FR 8000237 A FR8000237 A FR 8000237A FR 2446011 B3 FR2446011 B3 FR 2446011B3
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/01—Manufacture or treatment
- H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
- H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
- H10W10/0125—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics
- H10W10/0126—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics introducing electrical active impurities in local oxidation regions to create channel stoppers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/10—Isolation regions comprising dielectric materials
- H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US184079A | 1979-01-08 | 1979-01-08 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2446011A1 FR2446011A1 (fr) | 1980-08-01 |
| FR2446011B3 true FR2446011B3 (OSRAM) | 1981-11-06 |
Family
ID=21698078
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8000237A Granted FR2446011A1 (fr) | 1979-01-08 | 1980-01-07 | Dispositif mos a contacts autoalignes et son procede de fabrication |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS5593271A (OSRAM) |
| CA (1) | CA1131796A (OSRAM) |
| DE (1) | DE3000121A1 (OSRAM) |
| FR (1) | FR2446011A1 (OSRAM) |
| GB (1) | GB2040564A (OSRAM) |
| IT (1) | IT8019078A1 (OSRAM) |
| NL (1) | NL7908534A (OSRAM) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4455737A (en) * | 1978-05-26 | 1984-06-26 | Rockwell International Corporation | Process for and structure of high density VLSI circuits, having self-aligned gates and contacts for FET devices and conducting lines |
| US4506437A (en) * | 1978-05-26 | 1985-03-26 | Rockwell International Corporation | Process for and structure of high density VLSI circuits, having self-aligned gates and contacts for FET devices and conducting lines |
| US4409722A (en) * | 1980-08-29 | 1983-10-18 | International Business Machines Corporation | Borderless diffusion contact process and structure |
| US4341009A (en) * | 1980-12-05 | 1982-07-27 | International Business Machines Corporation | Method for making an electrical contact to a silicon substrate through a relatively thin layer of silicon dioxide on the surface of the substrate |
| JPS57113289A (en) * | 1980-12-30 | 1982-07-14 | Fujitsu Ltd | Semiconductor device and its manufacture |
| US4517729A (en) * | 1981-07-27 | 1985-05-21 | American Microsystems, Incorporated | Method for fabricating MOS device with self-aligned contacts |
| US4686000A (en) * | 1985-04-02 | 1987-08-11 | Heath Barbara A | Self-aligned contact process |
| JPS63207171A (ja) * | 1987-02-24 | 1988-08-26 | Nippon Telegr & Teleph Corp <Ntt> | 半導体メモリ装置及びその製造方法 |
| US5159353A (en) * | 1991-07-02 | 1992-10-27 | Hewlett-Packard Company | Thermal inkjet printhead structure and method for making the same |
| KR100377833B1 (ko) * | 2001-06-19 | 2003-03-29 | 삼성전자주식회사 | 보더리스 콘택 구조를 갖는 반도체 장치 및 그 제조방법 |
-
1979
- 1979-11-14 CA CA339,798A patent/CA1131796A/en not_active Expired
- 1979-11-21 GB GB7940199A patent/GB2040564A/en not_active Withdrawn
- 1979-11-23 NL NL7908534A patent/NL7908534A/nl not_active Application Discontinuation
-
1980
- 1980-01-03 DE DE19803000121 patent/DE3000121A1/de not_active Withdrawn
- 1980-01-07 FR FR8000237A patent/FR2446011A1/fr active Granted
- 1980-01-08 IT ITMI1980A19078A patent/IT8019078A1/it unknown
- 1980-01-08 JP JP83180A patent/JPS5593271A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| IT8019078A1 (it) | 1981-07-08 |
| JPS5593271A (en) | 1980-07-15 |
| IT8019078A0 (it) | 1980-01-08 |
| DE3000121A1 (de) | 1980-07-17 |
| CA1131796A (en) | 1982-09-14 |
| NL7908534A (nl) | 1980-07-10 |
| GB2040564A (en) | 1980-08-28 |
| FR2446011A1 (fr) | 1980-08-01 |